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Class Information
Number: 257/484
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > With means to prevent edge breakdown > Guard ring
Description: Subject matter wherein the means to prevent edge breakdown is a guard ring (e.g., a pn junction surrounding the periphery of the Schottky metal).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7453128 |
Semiconductor device and method for fabricating the same |
Nov. 18, 2008 |
| 7436039 |
Gallium nitride semiconductor device |
Oct. 14, 2008 |
| 7417265 |
Schottky diode structure with enhanced breakdown voltage and method of manufacture |
Aug. 26, 2008 |
| 7408206 |
Method and structure for charge dissipation in integrated circuits |
Aug. 5, 2008 |
| 7409660 |
Method and end cell library for avoiding substrate noise in an integrated circuit |
Aug. 5, 2008 |
| 7397103 |
Semiconductor with damage detection circuitry |
Jul. 8, 2008 |
| 7394137 |
Semiconductor device |
Jul. 1, 2008 |
| 7391093 |
Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film |
Jun. 24, 2008 |
| 7388272 |
Chip package and producing method thereof |
Jun. 17, 2008 |
| 7307329 |
Electronic device with guard ring |
Dec. 11, 2007 |
| 7276743 |
Retaining ring with conductive portion |
Oct. 2, 2007 |
| 7276771 |
Diode and method for manufacturing the same |
Oct. 2, 2007 |
| 7274077 |
Trench transistor |
Sep. 25, 2007 |
| 7265436 |
Non-repeated and non-uniform width seal ring structure |
Sep. 4, 2007 |
| 7247888 |
Film forming ring and method of manufacturing semiconductor device |
Jul. 24, 2007 |
| 7187054 |
Diode and method for manufacturing the same |
Mar. 6, 2007 |
| 7145211 |
Seal ring for mixed circuitry semiconductor devices |
Dec. 5, 2006 |
| 7141860 |
LDMOS transistor |
Nov. 28, 2006 |
| 7135718 |
Diode device and transistor device |
Nov. 14, 2006 |
| 7129558 |
Chip-scale schottky device |
Oct. 31, 2006 |
| 7112865 |
Diode and method for manufacturing the same |
Sep. 26, 2006 |
| 7098521 |
Reduced guard ring in schottky barrier diode structure |
Aug. 29, 2006 |
| 7091572 |
Fast recovery diode with a single large area p/n junction |
Aug. 15, 2006 |
| 7071525 |
Merged P-i-N schottky structure |
Jul. 4, 2006 |
| 7064408 |
Schottky barrier diode and method of making the same |
Jun. 20, 2006 |
| 7061067 |
Schottky barrier diode |
Jun. 13, 2006 |
| 7053453 |
Substrate contact and method of forming the same |
May. 30, 2006 |
| 7019377 |
Integrated circuit including high voltage devices and low voltage devices |
Mar. 28, 2006 |
| 6995446 |
Isolating phase change memories with schottky diodes and guard rings |
Feb. 7, 2006 |
| 6975013 |
Diode and method for manufacturing the same |
Dec. 13, 2005 |
| 6949401 |
Semiconductor component and method for producing the same |
Sep. 27, 2005 |
| 6949775 |
Semiconductor device having a guard ring |
Sep. 27, 2005 |
| 6949454 |
Guard ring structure for a Schottky diode |
Sep. 27, 2005 |
| 6940131 |
MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication |
Sep. 6, 2005 |
| 6936905 |
Two mask shottky diode with locos structure |
Aug. 30, 2005 |
| 6906355 |
Semiconductor device |
Jun. 14, 2005 |
| 6903413 |
Single-pole component manufacturing |
Jun. 7, 2005 |
| 6858912 |
Photodetector circuit |
Feb. 22, 2005 |
| 6838771 |
Semiconductor device having conductor layers stacked on a substrate |
Jan. 4, 2005 |
| 6835984 |
ESD resistant device |
Dec. 28, 2004 |
| 6831345 |
High withstand voltage semiconductor device |
Dec. 14, 2004 |
| 6822313 |
Diode |
Nov. 23, 2004 |
| 6787871 |
Integrated schottky barrier diode and manufacturing method thereof |
Sep. 7, 2004 |
| 6747294 |
Guard ring structure for reducing crosstalk and latch-up in integrated circuits |
Jun. 8, 2004 |
| 6740951 |
Two-mask trench schottky diode |
May. 25, 2004 |
| 6717229 |
Distributed reverse surge guard |
Apr. 6, 2004 |
| 6707128 |
Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode |
Mar. 16, 2004 |
| 6670688 |
Semiconductor device including at least one schottky metal layer surrounding PN junction |
Dec. 30, 2003 |
| 6633071 |
Contact on a P-type region |
Oct. 14, 2003 |
| 6624493 |
Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems |
Sep. 23, 2003 |
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