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Class Information
Number: 257/482
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts) > Microwave transit time device (e.g., impatt diode)
Description: Subject matter wherein the avalanche breakdown provides a power oscillation in the microwave region.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7071525 |
Merged P-i-N schottky structure |
Jul. 4, 2006 |
| 7015556 |
Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device |
Mar. 21, 2006 |
| 7012337 |
Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via hole |
Mar. 14, 2006 |
| 6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same |
Aug. 30, 2005 |
| 6921952 |
Torsion spring for MEMS structure |
Jul. 26, 2005 |
| 6855587 |
Gate-controlled, negative resistance diode device using band-to-band tunneling |
Feb. 15, 2005 |
| 6759744 |
Electronic circuit unit suitable for miniaturization |
Jul. 6, 2004 |
| 6274922 |
Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry |
Aug. 14, 2001 |
| 6147386 |
Semiconductor device and method of producing the same |
Nov. 14, 2000 |
| 6075276 |
ESD protection device using Zener diodes |
Jun. 13, 2000 |
| 6002147 |
Hybrid microwave-frequency integrated circuit |
Dec. 14, 1999 |
| 5917227 |
Light-emitting-diode array and light-emitting-diode element |
Jun. 29, 1999 |
| 5612556 |
Monolithic integration of microwave silicon devices and low loss transmission lines |
Mar. 18, 1997 |
| 5559359 |
Microwave integrated circuit passive element structure and method for reducing signal propagation losses |
Sep. 24, 1996 |
| 5488253 |
Semiconductor device |
Jan. 30, 1996 |
| 5371400 |
Semiconductor diode structure |
Dec. 6, 1994 |
| 5347149 |
Integrated circuit and method |
Sep. 13, 1994 |
| 5343065 |
Method of controlling surge protection device hold current |
Aug. 30, 1994 |
| 5278444 |
Planar varactor frequency multiplier devices with blocking barrier |
Jan. 11, 1994 |
| 5140382 |
Microwave integrated circuit using a distributed line with a variable effective length |
Aug. 18, 1992 |
| 5086329 |
Planar gallium arsenide NPNP microwave switch |
Feb. 4, 1992 |
| 4706041 |
Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof |
Nov. 10, 1987 |
| H29 |
Tunnett diode and method of making |
Mar. 4, 1986 |
| 4352115 |
Transit time diode with an input structure formed by a matrix of micropoints |
Sep. 28, 1982 |
| 4286276 |
Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness |
Aug. 25, 1981 |
| 4201604 |
Process for making a negative resistance diode utilizing spike doping |
May. 6, 1980 |
| 4197551 |
Semiconductor device having improved Schottky-barrier junction |
Apr. 8, 1980 |
| 4106959 |
Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system |
Aug. 15, 1978 |
| 4062103 |
Method for manufacturing a semiconductor device |
Dec. 13, 1977 |
| 4060820 |
Low noise read-type diode |
Nov. 29, 1977 |
| 4034394 |
Schottky semiconductor device |
Jul. 5, 1977 |
| 4033810 |
Method for making avalanche semiconductor amplifier |
Jul. 5, 1977 |
| 4001858 |
Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices |
Jan. 4, 1977 |
| 3986192 |
High efficiency gallium arsenide impatt diodes |
Oct. 12, 1976 |
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