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Class Information
Number: 257/481
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts)
Description: Subject matter wherein the Schottky barrier is in a device designed to operate in avalanche breakdown.










Sub-classes under this class:

Class Number Class Name Patents
257/482 Microwave transit time device (e.g., impatt diode) 47


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8592863 Photodetector with internal gain and detector comprising an array of such photodetectors Nov. 26, 2013
8575695 Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode Nov. 5, 2013
8508052 Stacked power converter structure and method Aug. 13, 2013
8497563 Semiconductor device and method for its manufacture Jul. 30, 2013
8492866 Isolated Zener diode Jul. 23, 2013
8471293 Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process Jun. 25, 2013
8445917 Bidirectional silicon carbide transient voltage suppression devices May. 21, 2013
8399894 Semiconductor light emitting device Mar. 19, 2013
8368145 Semiconductor device and electronic device Feb. 5, 2013
8339758 Transient voltage suppressor and method Dec. 25, 2012
8227855 Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same Jul. 24, 2012
8217419 Semiconductor device Jul. 10, 2012
8212281 3-D and 3-D schottky diode for cross-point, variable-resistance material memories, processes of forming same, and methods of using same Jul. 3, 2012
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
8198703 Zener diode with reduced substrate current Jun. 12, 2012
8188563 Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector May. 29, 2012
8159039 Superjunction device having a dielectric termination and methods for manufacturing the device Apr. 17, 2012
8125008 Schottky device and process of making the same comprising a geometry gap Feb. 28, 2012
8124981 Rugged semiconductor device architecture Feb. 28, 2012
8093133 Transient voltage suppressor and methods Jan. 10, 2012
8044520 Semiconductor device Oct. 25, 2011
8044486 Bottom anode Schottky diode structure Oct. 25, 2011
8035195 Semiconductor element Oct. 11, 2011
7982277 High-efficiency thinned imager with reduced boron updiffusion Jul. 19, 2011
7928533 Nano-multiplication region avalanche photodiodes and arrays Apr. 19, 2011
7919790 Semiconductor device and method of producing the same Apr. 5, 2011
7902570 Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor Mar. 8, 2011
7893464 Semiconductor photodiode and method of manufacture thereof Feb. 22, 2011
7893442 Schottky diode having low breakdown voltage and method for fabricating the same Feb. 22, 2011
7875905 Semiconductor optical receiver device, optical receiver module, and method for manufacturing semiconductor optical receiver device Jan. 25, 2011
7863756 Semiconductor device Jan. 4, 2011
7851823 Semiconductor photodetector device Dec. 14, 2010
7829970 Junction barrier schottky diode having high reverse blocking voltage Nov. 9, 2010
7759734 Semiconductor device Jul. 20, 2010
7741695 Semiconductor device Jun. 22, 2010
7719029 Negative feedback avalanche diode May. 18, 2010
7638857 Structure of silicon controlled rectifier Dec. 29, 2009
7626193 Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor Dec. 1, 2009
7538367 Avalanche photodiode May. 26, 2009
7511352 Rail Schottky device and method of making Mar. 31, 2009
7511357 Trenched MOSFETs with improved gate-drain (GD) clamp diodes Mar. 31, 2009
7443008 Lateral programmable polysilicon structure incorporating polysilicon blocking diode Oct. 28, 2008
7436039 Gallium nitride semiconductor device Oct. 14, 2008
7436070 Semiconductor device Oct. 14, 2008
7429761 High power diode utilizing secondary emission Sep. 30, 2008
7368762 Heterojunction photodiode May. 6, 2008
7091572 Fast recovery diode with a single large area p/n junction Aug. 15, 2006
7078783 Vertical unipolar component Jul. 18, 2006
7078781 High-breakdown-voltage semiconductor device Jul. 18, 2006
7071525 Merged P-i-N schottky structure Jul. 4, 2006

1 2 3










 
 
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