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Class Information
Number: 257/477
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > In integrated structure > With bipolar transistor
Description: Subject matter wherein the Schottky barrier device is located in a single integrated monolithic semiconductor chip with a bipolar transistor.










Sub-classes under this class:

Class Number Class Name Patents
257/479 Connected across base-collector junction of transistor (e.g., baker clamp) 55
257/478 Plural schottky barriers with different barrier heights 47


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8624347 Schottky barrier diode Jan. 7, 2014
8445370 Trench junction barrier controlled Schottky May. 21, 2013
8441075 Power semiconductor apparatus having a silicon power semiconductor device and a wide gap semiconductor device May. 14, 2013
8421180 Semiconductor structure Apr. 16, 2013
8338906 Schottky device Dec. 25, 2012
8134178 Light-emitting element Mar. 13, 2012
8101973 Transistor Jan. 24, 2012
8101970 Semiconductor device Jan. 24, 2012
8026569 Semiconductor device Sep. 27, 2011
7998807 Method for increasing the speed of a light emitting biopolar transistor device Aug. 16, 2011
7936041 Schottky barrier diodes for millimeter wave SiGe BICMOS applications May. 3, 2011
7910949 Power semiconductor device Mar. 22, 2011
7902630 Isolated bipolar transistor Mar. 8, 2011
7838907 Semiconductor device and power conversion device using the same Nov. 23, 2010
7829970 Junction barrier schottky diode having high reverse blocking voltage Nov. 9, 2010
7816763 BJT and method for fabricating the same Oct. 19, 2010
7781859 Schottky diode structures having deep wells for improving breakdown voltages Aug. 24, 2010
7772484 Photovoltaic module architecture Aug. 10, 2010
7737522 Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction Jun. 15, 2010
7466004 Diode structure to suppress parasitic current Dec. 16, 2008
7420228 Bipolar transistor comprising carbon-doped semiconductor Sep. 2, 2008
7193250 Light-emitting element having PNPN-structure and light-emitting element array Mar. 20, 2007
7157785 Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices Jan. 2, 2007
7064407 JFET controlled schottky barrier diode Jun. 20, 2006
7038244 Semiconductor device and method of manufacturing the same May. 2, 2006
7009269 Semiconductor device Mar. 7, 2006
6989557 Bipolar junction transistor and fabricating method Jan. 24, 2006
6972442 Efficiently fabricated bipolar transistor Dec. 6, 2005
6949764 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS Sep. 27, 2005
6933751 Integrated Schottky transistor logic configuration Aug. 23, 2005
6921958 IGBT with a Schottky barrier diode Jul. 26, 2005
6852580 Method of fabricating semiconductor device Feb. 8, 2005
6849871 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS Feb. 1, 2005
6838709 Bipolar transistor Jan. 4, 2005
6809400 Composite pinin collector structure for heterojunction bipolar transistors Oct. 26, 2004
6744111 Schottky-barrier tunneling transistor Jun. 1, 2004
6703685 Super self-aligned collector device for mono-and hetero bipolar junction transistors Mar. 9, 2004
6703283 Discontinuous dielectric interface for bipolar transistors Mar. 9, 2004
6573582 Semiconductor device Jun. 3, 2003
6525388 Compound semiconductor device having diode connected between emitter and collector of bipolar transistor Feb. 25, 2003
6417554 Latch free IGBT with schottky gate Jul. 9, 2002
6252282 Semiconductor device with a bipolar transistor, and method of manufacturing such a device Jun. 26, 2001
6046486 Heterojunction bipoplar mixer circuitry Apr. 4, 2000
6037646 High-frequency GaAs substrate based schottky barrier diodes Mar. 14, 2000
5930636 Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes Jul. 27, 1999
5889317 Leadframe for integrated circuit package Mar. 30, 1999
5763918 ESD structure that employs a schottky-barrier to reduce the likelihood of latch-up Jun. 9, 1998
5760424 Integrated circuit arrangement having at least one IGBT Jun. 2, 1998
5583348 Method for making a schottky diode that is compatible with high performance transistor structures Dec. 10, 1996
5567969 Compound modulated integrated transistor structure with reduced bipolar switch back effect Oct. 22, 1996

1 2 3










 
 
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