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Class Information
Number: 257/475
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > With doping profile to adjust barrier height
Description: Subject matter wherein the difference in electrical potential from one side of an active junction to the other has been adjusted by a distribution of impurity dopant in the semiconductor adjacent the Schottky junction.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
6580141 Trench schottky rectifier Jun. 17, 2003
6521961 Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor Feb. 18, 2003
6501146 Semiconductor device and method of manufacturing thereof Dec. 31, 2002
6501145 Semiconductor component and method for producing the same Dec. 31, 2002
6465874 Power semiconductor rectifier having schottky contact combined with insulation film Oct. 15, 2002
6462393 Schottky device Oct. 8, 2002
6441454 Trenched Schottky rectifiers Aug. 27, 2002
6426541 Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication Jul. 30, 2002
6396084 Structure of semiconductor rectifier May. 28, 2002
6252288 High power trench-based rectifier with improved reverse breakdown characteristic Jun. 26, 2001
6225200 Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby May. 1, 2001
6191447 Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same Feb. 20, 2001
6184563 Device structure for providing improved Schottky barrier rectifier Feb. 6, 2001
6184545 Semiconductor component with metal-semiconductor junction with low reverse current Feb. 6, 2001
6087704 Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer Jul. 11, 2000
5914500 Junction termination for SiC Schottky diode Jun. 22, 1999
5907179 Schottky diode assembly and production method May. 25, 1999
5854511 Semiconductor package including heat sink with layered conductive plate and non-conductive tape bonding to leads Dec. 29, 1998
5847437 Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby Dec. 8, 1998
5814873 Schottky barrier infrared sensor Sep. 29, 1998
5814874 Semiconductor device having a shorter switching time with low forward voltage Sep. 29, 1998
5808359 Semiconductor device having a heat sink with bumpers for protecting outer leads Sep. 15, 1998
5612567 Schottky barrier rectifiers and methods of forming same Mar. 18, 1997
5543634 Method of forming semiconductor materials and barriers Aug. 6, 1996
5536966 Retrograde NWell cathode Schottky transistor and fabrication process Jul. 16, 1996
5418376 Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure May. 23, 1995
5414272 Semiconductor electron emission element May. 9, 1995
5389815 Semiconductor diode with reduced recovery current Feb. 14, 1995
5365102 Schottky barrier rectifier with MOS trench Nov. 15, 1994
5350936 Linear field effect transistor Sep. 27, 1994
5345100 Semiconductor rectifier having high breakdown voltage and high speed operation Sep. 6, 1994
5285084 Diamond schottky diodes and gas sensors fabricated therefrom Feb. 8, 1994
5278443 Composite semiconductor device with Schottky and pn junctions Jan. 11, 1994
5262668 Schottky barrier rectifier including schottky barrier regions of differing barrier heights Nov. 16, 1993
5229637 Semiconductor device Jul. 20, 1993
5166760 Semiconductor Schottky barrier device with pn junctions Nov. 24, 1992
5150177 Schottky diode structure with localized diode well Sep. 22, 1992
5101254 Schottky barrier semiconductor photodetector including graded energy band gap layer Mar. 31, 1992
5101244 Semiconductor schottky device with pn regions Mar. 31, 1992
5073804 Method of forming semiconductor materials and barriers Dec. 17, 1991
5019530 Method of making metal-insulator-metal junction structures with adjustable barrier heights May. 28, 1991
4999685 Schotiky barrier height for metal contacts to III-V semiconductor compounds Mar. 12, 1991
4965643 Schottky diode for integrated circuits Oct. 23, 1990
4946803 Method for manufacturing a Schottky-type rectifier having controllable barrier height Aug. 7, 1990
4923827 T-type undercut electrical contact process on a semiconductor substrate May. 8, 1990
4908686 Stacked silicide/silicon mid- to long-wavelength infrared detector Mar. 13, 1990
4862238 Transistors Aug. 29, 1989
4816879 Schottky-type rectifier having controllable barrier height Mar. 28, 1989
4783688 Schottky barrier field effect transistors Nov. 8, 1988
4665414 Schottky-barrier MOS devices May. 12, 1987

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