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Class Information
Number: 257/475
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Schottky barrier > With doping profile to adjust barrier height
Description: Subject matter wherein the difference in electrical potential from one side of an active junction to the other has been adjusted by a distribution of impurity dopant in the semiconductor adjacent the Schottky junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7397102 |
Junction barrier schottky with low forward drop and improved reverse block voltage |
Jul. 8, 2008 |
| 7391058 |
Semiconductor devices and methods of making same |
Jun. 24, 2008 |
| 7388271 |
Schottky diode with minimal vertical current flow |
Jun. 17, 2008 |
| 7078783 |
Vertical unipolar component |
Jul. 18, 2006 |
| 7064408 |
Schottky barrier diode and method of making the same |
Jun. 20, 2006 |
| 6979874 |
Semiconductor device and method of manufacturing thereof |
Dec. 27, 2005 |
| 6949401 |
Semiconductor component and method for producing the same |
Sep. 27, 2005 |
| 6936905 |
Two mask shottky diode with locos structure |
Aug. 30, 2005 |
| 6921957 |
Low forward voltage drop schottky barrier diode and manufacturing method therefor |
Jul. 26, 2005 |
| 6846731 |
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
Jan. 25, 2005 |
| 6787821 |
Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance |
Sep. 7, 2004 |
| 6753588 |
Semiconductor rectifier |
Jun. 22, 2004 |
| 6717229 |
Distributed reverse surge guard |
Apr. 6, 2004 |
| 6710418 |
Schottky rectifier with insulation-filled trenches and method of forming the same |
Mar. 23, 2004 |
| 6710419 |
Method of manufacturing a schottky device |
Mar. 23, 2004 |
| 6657273 |
Termination for high voltage schottky diode |
Dec. 2, 2003 |
| 6649995 |
Semiconductor device and method of manufacturing the same |
Nov. 18, 2003 |
| 6580141 |
Trench schottky rectifier |
Jun. 17, 2003 |
| 6521961 |
Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor |
Feb. 18, 2003 |
| 6501145 |
Semiconductor component and method for producing the same |
Dec. 31, 2002 |
| 6501146 |
Semiconductor device and method of manufacturing thereof |
Dec. 31, 2002 |
| 6465874 |
Power semiconductor rectifier having schottky contact combined with insulation film |
Oct. 15, 2002 |
| 6462393 |
Schottky device |
Oct. 8, 2002 |
| 6441454 |
Trenched Schottky rectifiers |
Aug. 27, 2002 |
| 6426541 |
Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication |
Jul. 30, 2002 |
| 6396084 |
Structure of semiconductor rectifier |
May. 28, 2002 |
| 6252288 |
High power trench-based rectifier with improved reverse breakdown characteristic |
Jun. 26, 2001 |
| 6225200 |
Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby |
May. 1, 2001 |
| 6191447 |
Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
Feb. 20, 2001 |
| 6184545 |
Semiconductor component with metal-semiconductor junction with low reverse current |
Feb. 6, 2001 |
| 6184563 |
Device structure for providing improved Schottky barrier rectifier |
Feb. 6, 2001 |
| 6087704 |
Structure and method for manufacturing group III-V composite Schottky contacts enhanced by a sulphur fluoride/phosphorus fluoride layer |
Jul. 11, 2000 |
| 5914500 |
Junction termination for SiC Schottky diode |
Jun. 22, 1999 |
| 5907179 |
Schottky diode assembly and production method |
May. 25, 1999 |
| 5854511 |
Semiconductor package including heat sink with layered conductive plate and non-conductive tape bonding to leads |
Dec. 29, 1998 |
| 5847437 |
Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby |
Dec. 8, 1998 |
| 5814873 |
Schottky barrier infrared sensor |
Sep. 29, 1998 |
| 5814874 |
Semiconductor device having a shorter switching time with low forward voltage |
Sep. 29, 1998 |
| 5808359 |
Semiconductor device having a heat sink with bumpers for protecting outer leads |
Sep. 15, 1998 |
| 5612567 |
Schottky barrier rectifiers and methods of forming same |
Mar. 18, 1997 |
| 5543634 |
Method of forming semiconductor materials and barriers |
Aug. 6, 1996 |
| 5536966 |
Retrograde NWell cathode Schottky transistor and fabrication process |
Jul. 16, 1996 |
| 5418376 |
Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure |
May. 23, 1995 |
| 5414272 |
Semiconductor electron emission element |
May. 9, 1995 |
| 5389815 |
Semiconductor diode with reduced recovery current |
Feb. 14, 1995 |
| 5365102 |
Schottky barrier rectifier with MOS trench |
Nov. 15, 1994 |
| 5350936 |
Linear field effect transistor |
Sep. 27, 1994 |
| 5345100 |
Semiconductor rectifier having high breakdown voltage and high speed operation |
Sep. 6, 1994 |
| 5285084 |
Diamond schottky diodes and gas sensors fabricated therefrom |
Feb. 8, 1994 |
| 5278443 |
Composite semiconductor device with Schottky and pn junctions |
Jan. 11, 1994 |
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