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Class Information
Number: 257/470
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Temperature > Pn junction adapted as temperature sensor
Description: Subject matter wherein the active junction is a pn junction (i.e., forms a boundary between p-type and n-type carrier materials) and generates an electrical signal in response to thermal energy incident upon the active junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4112458 |
Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50.degree. C |
Sep. 5, 1978 |
| 4106341 |
Linearized thermistor temperature measuring circuit |
Aug. 15, 1978 |
| 4081818 |
Semiconductor temperature sensitive switching device with short carrier lifetime region |
Mar. 28, 1978 |
| 4050083 |
Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version |
Sep. 20, 1977 |
| 4035827 |
Thermally ballasted semiconductor device |
Jul. 12, 1977 |
| 4010486 |
Sensing circuits |
Mar. 1, 1977 |
| 4009482 |
Semiconductor thermally sensitive switch structure |
Feb. 22, 1977 |
| 3971056 |
Semiconductor temperature switches |
Jul. 20, 1976 |
| 3962692 |
Solid state temperature responsive switch |
Jun. 8, 1976 |
| 3956017 |
Optoelectric transducer |
May. 11, 1976 |
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