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Class Information
Number: 257/47
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure > In bipolar transistor structure
Description: Subject matter wherein the alloyed pn junction device is a bipolar transistor, i.e., a transistor structure whose working current passes through semiconductor material of both polarities (p and n).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8692244 Semiconductor device Apr. 8, 2014
8647537 Oxide sintered body and sputtering target Feb. 11, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8634236 Phase change memory device, storage system having the same and fabricating method thereof Jan. 21, 2014
8634442 Optical device structure using GaN substrates for laser applications Jan. 21, 2014
8604590 Transistor with enhanced capacitance at electrodes and transistor with light emitting capacitive element Dec. 10, 2013
8519491 MEMS sensing device and method for making same Aug. 27, 2013
8455975 Parasitic PNP bipolar transistor in a silicon-germanium BiCMOS process Jun. 4, 2013
8422525 Optical device structure using miscut GaN substrates for laser applications Apr. 16, 2013
RE44140 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Apr. 9, 2013
8314032 Semiconductor device and method for manufacturing the same Nov. 20, 2012
8300448 Semiconductor storage device, memory cell array, and a fabrication method and drive method of a semiconductor storage device Oct. 30, 2012
8227832 SiGe heterojunction bipolar transistor multi-finger structure Jul. 24, 2012
8193563 High power device isolation and integration Jun. 5, 2012
RE43042 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Dec. 27, 2011
7960753 Surface plasmon polariton actuated transistors Jun. 14, 2011
7943970 Method of detecting bio-molecules using the same field effect transistor on the gate sensing surface May. 17, 2011
7868382 Emitter-switched power actuator with integrated Zener diode between source and base Jan. 11, 2011
7863610 Integrated circuit including silicide region to inhibit parasitic currents Jan. 4, 2011
7795614 Device with phase-separated dielectric structure Sep. 14, 2010
7704824 Semiconductor layer Apr. 27, 2010
7635879 InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors Dec. 22, 2009
7598521 Semiconductor device in which the emitter resistance is reduced Oct. 6, 2009
7582494 Device structures for reducing device mismatch due to shallow trench isolation induced oxides stresses Sep. 1, 2009
7482642 Bipolar transistors having controllable temperature coefficient of current gain Jan. 27, 2009
7473983 Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns Jan. 6, 2009
7304334 Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Dec. 4, 2007
7271078 Method for fabricating semiconductor device and semiconductor device using the same Sep. 18, 2007
7173274 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Feb. 6, 2007
7008852 Discontinuous dielectric interface for bipolar transistors Mar. 7, 2006
6958491 Bipolar transistor test structure with lateral test probe pads Oct. 25, 2005
6949764 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS Sep. 27, 2005
6939771 Discontinuous dielectric interface for bipolar transistors Sep. 6, 2005
6917061 AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor Jul. 12, 2005
6870184 Mechanically-stable BJT with reduced base-collector capacitance Mar. 22, 2005
6849871 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS Feb. 1, 2005
6831293 P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source Dec. 14, 2004
6809400 Composite pinin collector structure for heterojunction bipolar transistors Oct. 26, 2004
6774411 Bipolar transistor with reduced emitter to base capacitance Aug. 10, 2004
6727516 Semiconductor power conversion apparatus Apr. 27, 2004
6717177 Semiconductor power conversion apparatus Apr. 6, 2004
6677621 Light emitting device and electrical appliance Jan. 13, 2004
6569730 High voltage transistor using P+ buried layer May. 27, 2003
6545340 Semiconductor device Apr. 8, 2003
6465804 High power bipolar transistor with emitter current density limiter Oct. 15, 2002
6465870 ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region Oct. 15, 2002
6396125 Semiconductor device May. 28, 2002
6274921 Semiconductor integrated circuit including protective transistor protecting another transistor during processing Aug. 14, 2001
6208012 Zener zap diode and method of manufacturing the same Mar. 27, 2001
5369304 Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor Nov. 29, 1994

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