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Class Information
Number: 257/47
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure > In bipolar transistor structure
Description: Subject matter wherein the alloyed pn junction device is a bipolar transistor, i.e., a transistor structure whose working current passes through semiconductor material of both polarities (p and n).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7304334 |
Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same |
Dec. 4, 2007 |
| 7271078 |
Method for fabricating semiconductor device and semiconductor device using the same |
Sep. 18, 2007 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Feb. 6, 2007 |
| 7008852 |
Discontinuous dielectric interface for bipolar transistors |
Mar. 7, 2006 |
| 6958491 |
Bipolar transistor test structure with lateral test probe pads |
Oct. 25, 2005 |
| 6949764 |
Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS |
Sep. 27, 2005 |
| 6939771 |
Discontinuous dielectric interface for bipolar transistors |
Sep. 6, 2005 |
| 6917061 |
AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor |
Jul. 12, 2005 |
| 6870184 |
Mechanically-stable BJT with reduced base-collector capacitance |
Mar. 22, 2005 |
| 6849871 |
Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS |
Feb. 1, 2005 |
| 6831293 |
P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source |
Dec. 14, 2004 |
| 6809400 |
Composite pinin collector structure for heterojunction bipolar transistors |
Oct. 26, 2004 |
| 6774411 |
Bipolar transistor with reduced emitter to base capacitance |
Aug. 10, 2004 |
| 6727516 |
Semiconductor power conversion apparatus |
Apr. 27, 2004 |
| 6717177 |
Semiconductor power conversion apparatus |
Apr. 6, 2004 |
| 6677621 |
Light emitting device and electrical appliance |
Jan. 13, 2004 |
| 6569730 |
High voltage transistor using P+ buried layer |
May. 27, 2003 |
| 6545340 |
Semiconductor device |
Apr. 8, 2003 |
| 6465804 |
High power bipolar transistor with emitter current density limiter |
Oct. 15, 2002 |
| 6465870 |
ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region |
Oct. 15, 2002 |
| 6396125 |
Semiconductor device |
May. 28, 2002 |
| 6274921 |
Semiconductor integrated circuit including protective transistor protecting another transistor during processing |
Aug. 14, 2001 |
| 6208012 |
Zener zap diode and method of manufacturing the same |
Mar. 27, 2001 |
| 5369304 |
Conductive diffusion barrier of titanium nitride in ohmic contact with a plurality of doped layers therefor |
Nov. 29, 1994 |
| 5254485 |
Method for manufacturing bipolar semiconductor device |
Oct. 19, 1993 |
| 5217909 |
Method for manufacturing a bipolar transistor |
Jun. 8, 1993 |
| 4549196 |
Lateral bipolar transistor |
Oct. 22, 1985 |
| 4032955 |
Deep diode transistor |
Jun. 28, 1977 |
| 3935587 |
High power, high frequency bipolar transistor with alloyed gold electrodes |
Jan. 27, 1976 |
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