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Class Information
Number: 257/46
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure > In pn junction tunnel diode (esaki diode)
Description: Subject matter wherein the alloyed pn junction device is a tunnel diode, i.e., wherein the active solid-state device includes a heavily doped pn junction wherein conduction occurs through the junction potential barrier due to a quantum mechanical effect even though the carriers which tunnel through the potential barrier do not have enough energy to overcome the barrier potential.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8704443 Organic EL device Apr. 22, 2014
8680645 Semiconductor device and a method for forming a semiconductor device Mar. 25, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8581367 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center Nov. 12, 2013
8330158 Generating an integrated circuit identifier Dec. 11, 2012
8324595 Outdoor water treatment apparatus to kill bacteria with ultraviolet light Dec. 4, 2012
8314422 Light emitting device, light emitting device package and lighting system Nov. 20, 2012
8304822 Pixel for picking up image signal and method of manufacturing the pixel Nov. 6, 2012
8290010 Surface plasmon generating apparatus and method for making the same Oct. 16, 2012
8232159 Phase change memory device having buried conduction lines directly underneath phase change memory cells and fabrication method thereof Jul. 31, 2012
8212327 High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme Jul. 3, 2012
8154048 Diode with shortened reverse recovery time without reducing impurity concentration Apr. 10, 2012
8124970 Phase change memory device having buried conduction lines directly underneath phase change memory cells and fabrication method thereof Feb. 28, 2012
8120023 Low crosstalk, front-side illuminated, back-side contact photodiode array Feb. 21, 2012
8076672 Passivation structure with voltage equalizing loops Dec. 13, 2011
7999266 Semiconductor device including poly-Si and method of manufacturing the same Aug. 16, 2011
7943928 ESD protection structures for semiconductor components May. 17, 2011
7932537 Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same Apr. 26, 2011
7902051 Method for fabrication of single crystal diodes for resistive memories Mar. 8, 2011
7893455 Semiconductor light emitting device with stress absorber, LED printhead, and image forming apparatus Feb. 22, 2011
7888764 Three-dimensional integrated circuit structure Feb. 15, 2011
7883958 Phase change memory device having a diode that has an enlarged PN interfacial junction and method for manufacturing the same Feb. 8, 2011
RE42007 Vertical geometry InGaN LED Dec. 28, 2010
7842939 Current-injecting/tunneling light-emitting device and method Nov. 30, 2010
7816665 Use of electroactive monolayers in generating negative differential resistance behaviors and devices employing the same Oct. 19, 2010
7812427 Soft switching semiconductor component with high robustness and low switching losses Oct. 12, 2010
7723723 Memory May. 25, 2010
7605397 Capacitive bypass Oct. 20, 2009
7589348 Thermal tunneling gap diode with integrated spacers and vacuum seal Sep. 15, 2009
7525170 Pillar P-i-n semiconductor diodes Apr. 28, 2009
7501650 P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element Mar. 10, 2009
7352617 Nano tube cell and memory device using the same Apr. 1, 2008
7329915 Rectifying contact to an n-type oxide material or a substantially insulating oxide material Feb. 12, 2008
7298645 Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure Nov. 20, 2007
7205591 Pixel sensor cell having reduced pinning layer barrier potential and method thereof Apr. 17, 2007
7173843 Serial diode cell and nonvolatile memory device using the same Feb. 6, 2007
7112865 Diode and method for manufacturing the same Sep. 26, 2006
7110291 Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure Sep. 19, 2006
7105866 Heterojunction tunneling diodes and process for fabricating same Sep. 12, 2006
7084437 Semiconductor device Aug. 1, 2006
7053404 Active semiconductor component with an optimized surface area May. 30, 2006
7034328 Vertical geometry InGaN LED Apr. 25, 2006
7026645 Leak detection method and micro-machined device assembly Apr. 11, 2006
7009866 Nonvolatile memory device using serial diode cell Mar. 7, 2006
6949774 Gallium nitride based diodes with low forward voltage and low reverse current operation Sep. 27, 2005
6936860 Light emitting diode having an insulating substrate Aug. 30, 2005
6921925 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) Jul. 26, 2005
6855975 Thin film diode integrated with chalcogenide memory cell Feb. 15, 2005
6822258 Self-organized nanometer interface structure and its applications in electronic and opto-electronic devices Nov. 23, 2004
6740907 Junction field-effect transistor May. 25, 2004

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