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Class Information
Number: 257/458
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Electromagnetic or particle radiation > Light > Pin detector, including combinations with non-light responsive active devices
Description: Subject matter wherein the device has a pn junction with an intrinsic semiconductor material region (i.e., one with no deliberate impurity dopants) portion between the p- and n-impurity doped regions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5304824 |
Photo-sensing device |
Apr. 19, 1994 |
| 5298086 |
Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby |
Mar. 29, 1994 |
| 5291054 |
Light receiving module for converting light signal to electric signal |
Mar. 1, 1994 |
| 5291036 |
Amorphous silicon sensor |
Mar. 1, 1994 |
| 5288338 |
Solar cell and method of producing the solar cell |
Feb. 22, 1994 |
| 5289023 |
High-density photosensor and contactless imaging array having wide dynamic range |
Feb. 22, 1994 |
| 5286306 |
Thin film photovoltaic cells from I-III-VI-VII compounds |
Feb. 15, 1994 |
| 5284525 |
Solar cell |
Feb. 8, 1994 |
| 5282902 |
Solar cell provided with a light reflection layer |
Feb. 1, 1994 |
| 5279681 |
Photovoltaic device with layer region containing germanium therin |
Jan. 18, 1994 |
| 5280189 |
Semiconductor element with a silicon layer |
Jan. 18, 1994 |
| 5276348 |
Dot matrix pattern on photosensitive semi-conductor surface |
Jan. 4, 1994 |
| 5268039 |
Photovoltaic device including shunt preventing layer and method for the deposition thereof |
Dec. 7, 1993 |
| 5256576 |
Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer |
Oct. 26, 1993 |
| 5256887 |
Photovoltaic device including a boron doping profile in an i-type layer |
Oct. 26, 1993 |
| 5252142 |
Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps |
Oct. 12, 1993 |
| 5252852 |
Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration |
Oct. 12, 1993 |
| 5248349 |
Process for making photovoltaic devices and resultant product |
Sep. 28, 1993 |
| 5245201 |
Photoelectric converting device and image processing apparatus utilizing the same |
Sep. 14, 1993 |
| 5242839 |
Method of manufacturing an integrated photoelectric receiving device |
Sep. 7, 1993 |
| 5242505 |
Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects |
Sep. 7, 1993 |
| 5239189 |
Integrated light emitting and light detecting device |
Aug. 24, 1993 |
| 5239193 |
Silicon photodiode for monolithic integrated circuits |
Aug. 24, 1993 |
| 5237197 |
Integrated VLSI radiation/particle detector with biased pin diodes |
Aug. 17, 1993 |
| 5229596 |
Image sensor having specific detector structure |
Jul. 20, 1993 |
| 5225706 |
Matrix of photosensitive elements associating a photodiode or a phototransistor and a storage capacitor |
Jul. 6, 1993 |
| 5223728 |
Optical switch integrated circuit |
Jun. 29, 1993 |
| 5221365 |
Photovoltaic cell and method of manufacturing polycrystalline semiconductive film |
Jun. 22, 1993 |
| 5213628 |
Photovoltaic device |
May. 25, 1993 |
| 5212395 |
P-I-N photodiodes with transparent conductive contacts |
May. 18, 1993 |
| 5192991 |
Crystallized polycrystalline semiconductor device |
Mar. 9, 1993 |
| 5187553 |
Avalanche photodiode having a thin multilayer superlattice structure sandwiched between barrier and well layers to reduce energy loss |
Feb. 16, 1993 |
| 5185272 |
Method of producing semiconductor device having light receiving element with capacitance |
Feb. 9, 1993 |
| 5181083 |
PIN diode with a low peak-on effect |
Jan. 19, 1993 |
| 5170228 |
Opto-electronic integrated circuit |
Dec. 8, 1992 |
| 5162891 |
Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same |
Nov. 10, 1992 |
| 5157538 |
Silicon spatial light modulator |
Oct. 20, 1992 |
| 5148251 |
Photoconductive avalanche GaAs switch |
Sep. 15, 1992 |
| 5140152 |
Full duplex optoelectronic device with integral emitter/detector pair |
Aug. 18, 1992 |
| 5130762 |
Integrated quantum well feedback structure |
Jul. 14, 1992 |
| 5126815 |
Position sensor and picture image input device |
Jun. 30, 1992 |
| 5107319 |
Monolithically integrated photodiode-FET combination |
Apr. 21, 1992 |
| 5107318 |
Semiconductor device having light receiving diode element with capacitance |
Apr. 21, 1992 |
| 5101253 |
Photo sensor with monolithic differential amplifier |
Mar. 31, 1992 |
| 5097306 |
Method of tristable selective light detection with pin diode |
Mar. 17, 1992 |
| 5097120 |
Contact type image sensor device |
Mar. 17, 1992 |
| 5073809 |
Electro-optic modulation method and device using the low-energy oblique transition of a highly coupled super-grid |
Dec. 17, 1991 |
| 5063426 |
InP/InGaAs monolithic integrated photodetector and heterojunction bipolar transistor |
Nov. 5, 1991 |
| 5060234 |
Injection laser with at least one pair of monoatomic layers of doping atoms |
Oct. 22, 1991 |
| 5055141 |
Enhancement of short-circuit current by use of wide bandgap N-layers in P-I-N amorphous silicon photovoltaic cells |
Oct. 8, 1991 |
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