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Class Information
Number: 257/458
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Electromagnetic or particle radiation > Light > Pin detector, including combinations with non-light responsive active devices
Description: Subject matter wherein the device has a pn junction with an intrinsic semiconductor material region (i.e., one with no deliberate impurity dopants) portion between the p- and n-impurity doped regions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5747864 |
Light receiving element and a method of fabricating the same |
May. 5, 1998 |
| 5744850 |
Photoelectric conversion semiconductor device |
Apr. 28, 1998 |
| 5736773 |
Photodiode with antireflection coating |
Apr. 7, 1998 |
| 5736431 |
Method for producing thin film solar battery |
Apr. 7, 1998 |
| 5730808 |
Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates |
Mar. 24, 1998 |
| 5723877 |
Photoelectric conversion apparatus |
Mar. 3, 1998 |
| 5720826 |
Photovoltaic element and fabrication process thereof |
Feb. 24, 1998 |
| 5719076 |
Method for the manufacture of semiconductor devices with optimized hydrogen content |
Feb. 17, 1998 |
| 5716480 |
Photovoltaic device and method of manufacturing the same |
Feb. 10, 1998 |
| 5714773 |
Photodiode array for remotely powered lightwave networks |
Feb. 3, 1998 |
| 5712504 |
Pin type light-receiving device, opto electronic conversion circuit, and opto-electronic conversion module |
Jan. 27, 1998 |
| 5705833 |
Surface-mounted photocoupler |
Jan. 6, 1998 |
| 5700467 |
Amorphous silicon carbide film and photovoltaic device using the same |
Dec. 23, 1997 |
| 5689122 |
InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor |
Nov. 18, 1997 |
| 5684308 |
CMOS-compatible InP/InGaAs digital photoreceiver |
Nov. 4, 1997 |
| 5684307 |
Semiconductor photodiode having the electrodes formed on the same surface |
Nov. 4, 1997 |
| 5682037 |
Thin film detector of ultraviolet radiation, with high spectral selectivity option |
Oct. 28, 1997 |
| 5677236 |
Process for forming a thin microcrystalline silicon semiconductor film |
Oct. 14, 1997 |
| 5676765 |
Pin junction photovoltaic device having a multi-layered I-type semiconductor layer with a specific non-single crystal I-type layer formed by a microwave plasma CVD process |
Oct. 14, 1997 |
| 5670817 |
Monolithic-hybrid radiation detector/readout |
Sep. 23, 1997 |
| 5670798 |
Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
Sep. 23, 1997 |
| 5668395 |
Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors |
Sep. 16, 1997 |
| 5668386 |
Planar photodetection device suitable for flip-chip process and a fabrication process of such a planar photodetection device |
Sep. 16, 1997 |
| 5654578 |
Superlattice avalanche photodiode with mesa structure |
Aug. 5, 1997 |
| 5648675 |
Semiconductor device with heterojunction |
Jul. 15, 1997 |
| 5646050 |
Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition |
Jul. 8, 1997 |
| 5631472 |
Accurate in-situ lattice matching by reflection high energy electron diffraction |
May. 20, 1997 |
| 5627383 |
Optoelectronic devices utilizing multiple quantum well pin structures |
May. 6, 1997 |
| 5620531 |
Photovoltaic element |
Apr. 15, 1997 |
| 5612229 |
Method of producing photovoltaic device |
Mar. 18, 1997 |
| 5603778 |
Method of forming transparent conductive layer, photoelectric conversion device using the transparent conductive layer, and manufacturing method for the photoelectric conversion device |
Feb. 18, 1997 |
| 5598022 |
Optical semiconductor device |
Jan. 28, 1997 |
| 5594237 |
PIN detector having improved linear response |
Jan. 14, 1997 |
| 5589007 |
Photovoltaic elements and process and apparatus for their formation |
Dec. 31, 1996 |
| 5587611 |
Coplanar X-ray photodiode assemblies |
Dec. 24, 1996 |
| 5583352 |
Low-noise, reach-through, avalanche photodiodes |
Dec. 10, 1996 |
| 5576559 |
Heterojunction electron transfer device |
Nov. 19, 1996 |
| 5567972 |
Optical element mounted on a base having a capacitor imbedded therein |
Oct. 22, 1996 |
| 5563425 |
Photoelectrical conversion device and generating system using the same |
Oct. 8, 1996 |
| 5562781 |
Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell |
Oct. 8, 1996 |
| 5557114 |
Optical fet |
Sep. 17, 1996 |
| 5557133 |
Voltage-controlled variable spectrum photodetector for 2D color image detection and reconstruction applications |
Sep. 17, 1996 |
| 5552616 |
Semiconductor light detecting device with groove |
Sep. 3, 1996 |
| 5549763 |
Photovoltaic device |
Aug. 27, 1996 |
| 5538564 |
Three dimensional amorphous silicon/microcrystalline silicon solar cells |
Jul. 23, 1996 |
| 5539668 |
Optical switching apparatus |
Jul. 23, 1996 |
| 5538564 |
Three dimensional amorphous silicon/microcrystalline silicon solar cells |
Jul. 23, 1996 |
| 5536333 |
Process for making photovoltaic devices and resultant product |
Jul. 16, 1996 |
| 5528071 |
P-I-N photodiode with transparent conductor n+layer |
Jun. 18, 1996 |
| 5525828 |
High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields |
Jun. 11, 1996 |
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