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Class Information
Number: 257/458
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Electromagnetic or particle radiation > Light > Pin detector, including combinations with non-light responsive active devices
Description: Subject matter wherein the device has a pn junction with an intrinsic semiconductor material region (i.e., one with no deliberate impurity dopants) portion between the p- and n-impurity doped regions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6075253 |
Monocrystalline semiconductor photodetector |
Jun. 13, 2000 |
| 6072224 |
Monolithic x-ray image detector and method of manufacturing |
Jun. 6, 2000 |
| 6060730 |
Semiconductor light emitting device |
May. 9, 2000 |
| 6058229 |
Long wavelength InGaAs photogenerator |
May. 2, 2000 |
| 6057569 |
Diode limiter device |
May. 2, 2000 |
| 6054747 |
Integrated photoreceiver having metal-insulator-semiconductor switch |
Apr. 25, 2000 |
| 6054746 |
Image sensor and its manufacture |
Apr. 25, 2000 |
| 6043427 |
Photovoltaic device, photoelectric transducer and method of manufacturing same |
Mar. 28, 2000 |
| 6043549 |
Responsivity photodetector |
Mar. 28, 2000 |
| 6037644 |
Semi-transparent monitor detector for surface emitting light emitting devices |
Mar. 14, 2000 |
| 6034431 |
Electronic integrated circuit with optical inputs and outputs |
Mar. 7, 2000 |
| 6027956 |
Process for producing planar dielectrically isolated high speed pin photodiode |
Feb. 22, 2000 |
| 6028335 |
Semiconductor device |
Feb. 22, 2000 |
| 6028264 |
Semiconductor having low concentration of carbon |
Feb. 22, 2000 |
| 6020620 |
Semiconductor light-receiving device with inclined multilayer structure |
Feb. 1, 2000 |
| 6018187 |
Elevated pin diode active pixel sensor including a unique interconnection structure |
Jan. 25, 2000 |
| 6013934 |
Semiconductor structure for thermal shutdown protection |
Jan. 11, 2000 |
| 6013930 |
Semiconductor device having laminated source and drain regions and method for producing the same |
Jan. 11, 2000 |
| 6005266 |
Very low leakage JFET for monolithically integrated arrays |
Dec. 21, 1999 |
| 6002142 |
Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions |
Dec. 14, 1999 |
| 5998806 |
Three-color sensor with a pin or nip series of layers |
Dec. 7, 1999 |
| 5990490 |
Optical electronic IC capable of photo detection |
Nov. 23, 1999 |
| 5977571 |
Low loss connecting arrangement for photodiodes |
Nov. 2, 1999 |
| 5973339 |
Semiconductor photodetector having an optical attenuator |
Oct. 26, 1999 |
| 5942788 |
Solid state image sensing device |
Aug. 24, 1999 |
| 5942049 |
Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition |
Aug. 24, 1999 |
| 5936292 |
Structure of thin film transistor and gate terminal having a capacitive structure composed of the TFT elements |
Aug. 10, 1999 |
| 5923049 |
Trichromatic sensor |
Jul. 13, 1999 |
| 5923071 |
Semiconductor device having a semiconductor film of low oxygen concentration |
Jul. 13, 1999 |
| 5920091 |
Method of fabricating highly sensitive photo sensor and structure of the same |
Jul. 6, 1999 |
| 5920065 |
Optically activated back-to-back PIN diode switch having exposed intrinsic region |
Jul. 6, 1999 |
| 5905272 |
Optical receiver |
May. 18, 1999 |
| 5895930 |
Infrared photodetector with doping superlattice structure |
Apr. 20, 1999 |
| 5886374 |
Optically sensitive device and method |
Mar. 23, 1999 |
| 5880489 |
Semiconductor photodetector |
Mar. 9, 1999 |
| 5872016 |
Process of making an optoelectronic devices utilizing multiple quantum well pin structures |
Feb. 16, 1999 |
| 5851310 |
Strained quantum well photovoltaic energy converter |
Dec. 22, 1998 |
| 5844292 |
Photosensitive structure hardened to hard electromagnetic radiation and its application to video cameras |
Dec. 1, 1998 |
| 5841178 |
Optical component package |
Nov. 24, 1998 |
| 5828117 |
Thin-film solar cell |
Oct. 27, 1998 |
| 5828118 |
System which uses porous silicon for down converting electromagnetic energy to an energy level within the bandpass of an electromagnetic energy detector |
Oct. 27, 1998 |
| 5821597 |
Photoelectric conversion device |
Oct. 13, 1998 |
| 5818096 |
Pin photodiode with improved frequency response and saturation output |
Oct. 6, 1998 |
| 5811867 |
Photo detective unit and electric apparatus using the same |
Sep. 22, 1998 |
| 5798558 |
Monolithic x-ray image detector and method of manufacturing |
Aug. 25, 1998 |
| 5796153 |
Variable-response x-ray detection assemblies and methods of using same |
Aug. 18, 1998 |
| 5789765 |
Photo diode providing high-linearity signal current in response to light receiving signal |
Aug. 4, 1998 |
| 5783839 |
Semiconductor device having a GESC layer between silicon layers with triangular Ge concentration |
Jul. 21, 1998 |
| 5769963 |
Photovoltaic device |
Jun. 23, 1998 |
| 5753960 |
Circuit with monolitically integrated p-i-n/Schottky diode arrangement |
May. 19, 1998 |
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