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Class Information
Number: 257/458
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Electromagnetic or particle radiation > Light > Pin detector, including combinations with non-light responsive active devices
Description: Subject matter wherein the device has a pn junction with an intrinsic semiconductor material region (i.e., one with no deliberate impurity dopants) portion between the p- and n-impurity doped regions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4499483 |
Silicon photodiode with n-type control layer |
Feb. 12, 1985 |
| 4496788 |
Photovoltaic device |
Jan. 29, 1985 |
| 4491682 |
Amorphous silicon photovoltaic device including a two-layer transparent electrode |
Jan. 1, 1985 |
| 4490573 |
Solar cells |
Dec. 25, 1984 |
| 4486765 |
Avalanche photodetector including means for separating electrons and holes |
Dec. 4, 1984 |
| 4482804 |
Photosensor array wherein each photosensor comprises a plurality of amorphous silicon p-i-n diodes |
Nov. 13, 1984 |
| 4476346 |
Photovoltaic device |
Oct. 9, 1984 |
| 4471155 |
Narrow band gap photovoltaic devices with enhanced open circuit voltage |
Sep. 11, 1984 |
| 4464823 |
Method for eliminating short and latent short circuit current paths in photovoltaic devices |
Aug. 14, 1984 |
| 4453173 |
Photocell utilizing a wide-bandgap semiconductor material |
Jun. 5, 1984 |
| 4450316 |
Amorphous silicon photovoltaic device having two-layer transparent electrode |
May. 22, 1984 |
| 4447746 |
Digital photodetectors |
May. 8, 1984 |
| 4443809 |
p-i-n Photodiodes |
Apr. 17, 1984 |
| 4441113 |
P-Type semiconductor material having a wide band gap |
Apr. 3, 1984 |
| 4434318 |
Solar cells and method |
Feb. 28, 1984 |
| 4433202 |
Thin film solar cell |
Feb. 21, 1984 |
| 4418132 |
Member for electrostatic photocopying with Si.sub.3 N.sub.4-x (0<x<4) |
Nov. 29, 1983 |
| 4417092 |
Sputtered pin amorphous silicon semi-conductor device and method therefor |
Nov. 22, 1983 |
| 4387387 |
PN Or PIN junction type semiconductor photoelectric conversion device |
Jun. 7, 1983 |
| 4387265 |
Tandem junction amorphous semiconductor photovoltaic cell |
Jun. 7, 1983 |
| 4378460 |
Metal electrode for amorphous silicon solar cells |
Mar. 29, 1983 |
| 4367483 |
Optical semiconductor device |
Jan. 4, 1983 |
| 4366377 |
Dual sensitivity optical sensor |
Dec. 28, 1982 |
| 4342044 |
Method for optimizing photoresponsive amorphous alloys and devices |
Jul. 27, 1982 |
| 4328508 |
III-V Quaternary alloy photodiode |
May. 4, 1982 |
| 4282541 |
Planar P-I-N photodetectors |
Aug. 4, 1981 |
| 4281208 |
Photovoltaic device and method of manufacturing thereof |
Jul. 28, 1981 |
| 4277793 |
Photodiode having enhanced long wavelength response |
Jul. 7, 1981 |
| 4254429 |
Hetero junction semiconductor device |
Mar. 3, 1981 |
| 4240088 |
Semiconductor high-voltage switch |
Dec. 16, 1980 |
| 4217598 |
Electroluminescent photodetector diode and busbar lines using said diode |
Aug. 12, 1980 |
| 4198646 |
Monolithic imager for near-IR |
Apr. 15, 1980 |
| 4183034 |
Pin photodiode and integrated circuit including same |
Jan. 8, 1980 |
| 4167015 |
Cermet layer for amorphous silicon solar cells |
Sep. 4, 1979 |
| 4137543 |
Light detector arrangement |
Jan. 30, 1979 |
| 4127932 |
Method of fabricating silicon photodiodes |
Dec. 5, 1978 |
| 4072541 |
Radiation hardened P-I-N and N-I-P solar cells |
Feb. 7, 1978 |
| 4064521 |
Semiconductor device having a body of amorphous silicon |
Dec. 20, 1977 |
| 4011016 |
Semiconductor radiation wavelength detector |
Mar. 8, 1977 |
| 4009058 |
Method of fabricating large area, high voltage PIN photodiode devices |
Feb. 22, 1977 |
| 3978510 |
Heterojunction photovoltaic devices employing I-III-VI compounds |
Aug. 31, 1976 |
| 3963925 |
Photoconductive detector and method of fabrication |
Jun. 15, 1976 |
| 3946423 |
Opto-coupler |
Mar. 23, 1976 |
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