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Class Information
Number: 257/458
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Electromagnetic or particle radiation > Light > Pin detector, including combinations with non-light responsive active devices
Description: Subject matter wherein the device has a pn junction with an intrinsic semiconductor material region (i.e., one with no deliberate impurity dopants) portion between the p- and n-impurity doped regions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4710589 |
Heterojunction p-i-n photovoltaic cell |
Dec. 1, 1987 |
| 4704624 |
Semiconductor photoelectric conversion device with partly crystallized intrinsic layer |
Nov. 3, 1987 |
| 4703336 |
Photodetection and current control devices |
Oct. 27, 1987 |
| 4703337 |
Semiconductor photoelectric conversion device, light-transparent substrate therefor and their manufacturing methods |
Oct. 27, 1987 |
| 4698658 |
Amorphous semiconductor device |
Oct. 6, 1987 |
| 4695859 |
Thin film light emitting diode, photonic circuit employing said diode imager employing said circuits |
Sep. 22, 1987 |
| 4692558 |
Counteraction of semiconductor impurity effects |
Sep. 8, 1987 |
| 4682196 |
Multi-layered semi-conductor photodetector |
Jul. 21, 1987 |
| 4681984 |
Solar cell comprising a semiconductor body formed of amorphous silicon and having a layer sequence p-SiC/i/n |
Jul. 21, 1987 |
| 4680616 |
Removal of defects from semiconductors |
Jul. 14, 1987 |
| 4680607 |
Photovoltaic cell |
Jul. 14, 1987 |
| 4678542 |
Self-alignment process for thin film diode array fabrication |
Jul. 7, 1987 |
| 4677249 |
Photovoltaic device |
Jun. 30, 1987 |
| 4672148 |
Thin-film solar cells |
Jun. 9, 1987 |
| 4667212 |
Integrated optical and electric circuit device |
May. 19, 1987 |
| 4665278 |
Heat-resistant photoelectric converter |
May. 12, 1987 |
| 4650524 |
Method for dividing semiconductor film formed on a substrate into plural regions by backside energy beam irradiation |
Mar. 17, 1987 |
| 4639543 |
Semiconductor devices having a metallic glass substrate |
Jan. 27, 1987 |
| 4636829 |
Photodetector integrated circuit |
Jan. 13, 1987 |
| 4633033 |
Photovoltaic device and method |
Dec. 30, 1986 |
| 4633034 |
Photovoltaic device and method |
Dec. 30, 1986 |
| 4625225 |
Integrated light detection or generation means and amplifying means |
Nov. 25, 1986 |
| 4620058 |
Semiconductor device for converting light into electric energy |
Oct. 28, 1986 |
| 4616247 |
P-I-N and avalanche photodiodes |
Oct. 7, 1986 |
| 4616246 |
Enhancement of photoconductivity in pyrolytically prepared semiconductors |
Oct. 7, 1986 |
| 4609771 |
Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material |
Sep. 2, 1986 |
| 4604636 |
Microcrystalline semiconductor method and devices |
Aug. 5, 1986 |
| 4602352 |
Apparatus and method for detection of infrared radiation |
Jul. 22, 1986 |
| 4599482 |
Semiconductor photoelectric conversion device and method of making the same |
Jul. 8, 1986 |
| 4598306 |
Barrier layer for photovoltaic devices |
Jul. 1, 1986 |
| 4591893 |
Photoelectric conversion device utilizing fibrous silicon |
May. 27, 1986 |
| 4591892 |
Semiconductor photoelectric conversion device |
May. 27, 1986 |
| 4587544 |
Avalanche photodetector |
May. 6, 1986 |
| 4586066 |
Avalanche photodetector |
Apr. 29, 1986 |
| 4586068 |
Solid state photomultiplier |
Apr. 29, 1986 |
| 4584427 |
Thin film solar cell with free tin on tin oxide transparent conductor |
Apr. 22, 1986 |
| 4571626 |
Solid state area imaging apparatus |
Feb. 18, 1986 |
| 4571446 |
Photoelectric conversion panel and assembly thereof |
Feb. 18, 1986 |
| 4568960 |
Blocked impurity band detectors |
Feb. 4, 1986 |
| 4559552 |
PIN semiconductor photoelectric conversion device with two oxide layers |
Dec. 17, 1985 |
| 4555586 |
Photovoltiac device having long term energy conversion stability and method of producing same |
Nov. 26, 1985 |
| 4539431 |
Pulse anneal method for solar cell |
Sep. 3, 1985 |
| 4532372 |
Barrier layer for photovoltaic devices |
Jul. 30, 1985 |
| 4532537 |
Photodetector with enhanced light absorption |
Jul. 30, 1985 |
| 4531015 |
PIN Amorphous silicon solar cell with nitrogen compensation |
Jul. 23, 1985 |
| 4529832 |
Lead-cadmium-sulphide solar cell |
Jul. 16, 1985 |
| 4523214 |
Solid state image pickup device utilizing microcrystalline and amorphous silicon |
Jun. 11, 1985 |
| 4514748 |
Germanium p-i-n photodetector on silicon substrate |
Apr. 30, 1985 |
| 4499482 |
Weak-source for cryogenic semiconductor device |
Feb. 12, 1985 |
| 4499331 |
Amorphous semiconductor and amorphous silicon photovoltaic device |
Feb. 12, 1985 |
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