| |
 |
|
Class Information
Number: 257/458
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Electromagnetic or particle radiation > Light > Pin detector, including combinations with non-light responsive active devices
Description: Subject matter wherein the device has a pn junction with an intrinsic semiconductor material region (i.e., one with no deliberate impurity dopants) portion between the p- and n-impurity doped regions.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5055894 |
Monolithic interleaved LED/PIN photodetector array |
Oct. 8, 1991 |
| 5053837 |
InGaAs/InP type pin photodiodes |
Oct. 1, 1991 |
| 5051803 |
Diode and producing method thereof and contact image sensor device comprising the same |
Sep. 24, 1991 |
| 5051790 |
Optoelectronic interconnections for integrated circuits |
Sep. 24, 1991 |
| 5051789 |
Device having two optical ports for switching applications |
Sep. 24, 1991 |
| 5047829 |
Monolithic p-i-n diode limiter |
Sep. 10, 1991 |
| 5045908 |
Vertically and laterally illuminated p-i-n photodiode |
Sep. 3, 1991 |
| 5043785 |
Photosensor device photodiode and switch |
Aug. 27, 1991 |
| 5040033 |
Optical amplifier-photodetector assemblage |
Aug. 13, 1991 |
| 5034794 |
Infrared imaging device |
Jul. 23, 1991 |
| 5032885 |
Semiconductor device including a light receiving element, an amplifier, and an equalizer having a capacitor with the same laminate structure as the light receiving element |
Jul. 16, 1991 |
| 5032884 |
Semiconductor pin device with interlayer or dopant gradient |
Jul. 16, 1991 |
| 5031012 |
Devices having asymmetric delta-doping |
Jul. 9, 1991 |
| 5030831 |
Method of operating p-i-n diodes and superlattice devices as far infrared detectors |
Jul. 9, 1991 |
| 5024706 |
Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film |
Jun. 18, 1991 |
| 5025297 |
Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same |
Jun. 18, 1991 |
| 5023686 |
PIN-FET combination with buried p-layer |
Jun. 11, 1991 |
| 5015838 |
Color sensor having laminated semiconductor layers |
May. 14, 1991 |
| 5008590 |
Display arrangement having pin diode switching elements |
Apr. 16, 1991 |
| 5008726 |
PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic % |
Apr. 16, 1991 |
| 5007971 |
Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film |
Apr. 16, 1991 |
| 5006180 |
Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film |
Apr. 9, 1991 |
| 5002617 |
Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film |
Mar. 26, 1991 |
| 5002618 |
Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film |
Mar. 26, 1991 |
| 5001080 |
Method for producing a monolithically integrated optoelectronic device |
Mar. 19, 1991 |
| 4999696 |
PIN photodiode having a low leakage current |
Mar. 12, 1991 |
| 4996163 |
Method for producing an opto-electronic integrated circuit |
Feb. 26, 1991 |
| 4980546 |
Photosensitive device of the type with amplification of the signal at the photosensitive dots |
Dec. 25, 1990 |
| 4977096 |
Method of making a photosensor using selective epitaxial growth |
Dec. 11, 1990 |
| 4974044 |
Devices having asymmetric delta-doping |
Nov. 27, 1990 |
| 4972252 |
Photosensor with a capacitor connected in parallel so as to increase the dynamic range and to improve the holding characteristics of the photosensor |
Nov. 20, 1990 |
| 4954856 |
Semiconductor photoelectric conversion device and method of making the same |
Sep. 4, 1990 |
| 4937454 |
Radiation detector |
Jun. 26, 1990 |
| 4927770 |
Method of fabricating back surface point contact solar cells |
May. 22, 1990 |
| 4926230 |
Multiple junction solar power generation cells |
May. 15, 1990 |
| 4926231 |
Integrated pin photo-detector |
May. 15, 1990 |
| 4926229 |
Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semic |
May. 15, 1990 |
| 4923524 |
Wide ranging photovoltaic laminates comprising particulate semiconductors |
May. 8, 1990 |
| 4922218 |
Photovoltaic device |
May. 1, 1990 |
| RE33208 |
Photoelectric conversion panel and assembly thereof |
May. 1, 1990 |
| 4916305 |
Optical detectors with selective bias voltage application |
Apr. 10, 1990 |
| 4910570 |
Photo-detector for ultraviolet and process for its production |
Mar. 20, 1990 |
| 4907052 |
Semiconductor tandem solar cells with metal silicide barrier |
Mar. 6, 1990 |
| 4907054 |
Matrix of photosensitive elements combining a phototransistor with a storage capacitor |
Mar. 6, 1990 |
| 4903102 |
Semiconductor photoelectric conversion device and method of making the same |
Feb. 20, 1990 |
| 4899204 |
High voltage switch structure with light responsive diode stack |
Feb. 6, 1990 |
| 4896201 |
Semiconductor detector having integrated coupling capacitors and intergrated dc biasing structures |
Jan. 23, 1990 |
| 4892594 |
Photovoltaic element |
Jan. 9, 1990 |
| 4891521 |
Photon counting structure and system |
Jan. 2, 1990 |
| 4889826 |
Static induction transistor and manufacturing method of the same |
Dec. 26, 1989 |
|
|
|
