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Class Information
Number: 257/456
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Electromagnetic or particle radiation > Light > Schottky barrier (e.g., a transparent schottky metallic layer or a schottky barrier containing at least one of indium or tin (e.g., sno 2 , indium tin oxide)) > With specified schottky metallic layer > Schottky metallic layer is a silicide > Silicide of refractory metal
Description: Subject matter wherein the Schottky layer comprises a silicide of the refractory metals (i.e., W, Ti, Ta, Hf, Zr, V, Nb, Mo, and Cr).










Patents under this class:

Patent Number Title Of Patent Date Issued
8436444 Thin film photoelectric conversion device and method for manufacturing thin film photoelectric conversion device May. 7, 2013
8344398 Low voltage diode with reduced parasitic resistance and method for fabricating Jan. 1, 2013
8164154 Low profile Schottky barrier diode for solar cells and solar panels and method of fabrication thereof Apr. 24, 2012
8063464 Photo detector and method for forming thereof Nov. 22, 2011
8039378 Method of manufacturing a semiconductor device Oct. 18, 2011
7906721 Solar cell module connector Mar. 15, 2011
7834367 Low voltage diode with reduced parasitic resistance and method for fabricating Nov. 16, 2010
7679662 Solid-state imaging element and solid-state imaging device Mar. 16, 2010
7602035 Light emitting or light receiving semiconductor module and method for manufacturing same Oct. 13, 2009
7420215 Transparent conductive film, semiconductor device and active matrix display unit Sep. 2, 2008
7176537 High performance CMOS with metal-gate and Schottky source/drain Feb. 13, 2007
7038277 Transferable device-containing layer for silicon-on-insulator applications May. 2, 2006
6982467 Semiconductor device and method of manufacturing the same Jan. 3, 2006
6846729 Process for counter doping N-type silicon in Schottky device Ti silicide barrier Jan. 25, 2005
6798034 Technique for suppression of edge current in semiconductor devices Sep. 28, 2004
6756651 CMOS-compatible metal-semiconductor-metal photodetector Jun. 29, 2004
6744105 Memory array having shallow bit line with silicide contact portion and method of formation Jun. 1, 2004
6720627 Semiconductor device having junction depths for reducing short channel effect Apr. 13, 2004
6696739 High efficient pn junction solar cell Feb. 24, 2004
6608360 One-chip micro-integrated optoelectronic sensor Aug. 19, 2003
6262485 Using implants to lower anneal temperatures Jul. 17, 2001
5710447 Solid state image device having a transparent Schottky electrode Jan. 20, 1998
5449924 Photodiode having a Schottky barrier formed on the lower metallic electrode Sep. 12, 1995
5365054 Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein Nov. 15, 1994
4908686 Stacked silicide/silicon mid- to long-wavelength infrared detector Mar. 13, 1990
4829173 Radiation detecting apparatus May. 9, 1989
4794438 Semiconductor radiation detecting device Dec. 27, 1988
4782377 Semiconducting metal silicide radiation detectors and source Nov. 1, 1988
4763176 Metal-semiconductor-metal schottky photodiode Aug. 9, 1988
4628339 Polycrystalline silicon Schottky diode array Dec. 9, 1986
4544939 Schottky-barrier diode radiant energy detector with extended longer wavelength response Oct. 1, 1985











 
 
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