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Class Information
Number: 257/45
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure > Elongated alloyed region (e.g., thermal gradient zone melting, tgzm)
Description: Subject matter wherein the alloyed region has at least one dimension substantially larger than another.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8692206 Systems, devices, and methods including implants for managing cumulative X-ray radiation dosage Apr. 8, 2014
8679880 Thin film forming method and quantum dot device Mar. 25, 2014
8664655 Organic light emitting display apparatus Mar. 4, 2014
8637873 Package and high frequency terminal structure for the same Jan. 28, 2014
8587113 Thermal plate with planar thermal zones for semiconductor processing Nov. 19, 2013
8581367 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center Nov. 12, 2013
8461674 Thermal plate with planar thermal zones for semiconductor processing Jun. 11, 2013
8278659 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon Oct. 2, 2012
RE42007 Vertical geometry InGaN LED Dec. 28, 2010
7321157 CoSb.sub.3-based thermoelectric device fabrication method Jan. 22, 2008
7034328 Vertical geometry InGaN LED Apr. 25, 2006
6921925 Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) Jul. 26, 2005
6881984 Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode Apr. 19, 2005
6856559 Semiconductor memory device Feb. 15, 2005
6573531 Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures Jun. 3, 2003
6521473 Method of fabricating a liquid crystal display Feb. 18, 2003
6437363 Semiconductor photonic device Aug. 20, 2002
6172370 Lateral PN arrayed digital x-ray image sensor Jan. 9, 2001
5434531 High voltage tolerant switch constructed for a low voltage CMOS process Jul. 18, 1995
5285090 Contacts to rod shaped Schottky gate fets Feb. 8, 1994
4633282 Metal-semiconductor field-effect transistor with a partial p-type drain Dec. 30, 1986
4549196 Lateral bipolar transistor Oct. 22, 1985
4207670 Method for making a solid state neuron Jun. 17, 1980
4163983 Solid state neuron Aug. 7, 1979
4157564 Deep diode devices Jun. 5, 1979
4071378 Process of making a deep diode solid state transformer Jan. 31, 1978
4063966 Method for forming spaced electrically isolated regions in a body of semiconductor material Dec. 20, 1977
4063272 Semiconductor device and method of manufacture thereof Dec. 13, 1977
4042448 Post TGZM surface etch Aug. 16, 1977
4032955 Deep diode transistor Jun. 28, 1977
4032960 Anisotropic resistor for electrical feed throughs Jun. 28, 1977
4030116 High aspect ratio P-N junctions by the thermal gradient zone melting technique Jun. 14, 1977
4024566 Deep diode device May. 17, 1977
4024565 Deep diode solid state transformer May. 17, 1977
4011582 Deep power diode Mar. 8, 1977
4006040 Semiconductor device manufacture Feb. 1, 1977
3995309 Isolation junctions for semiconductor devices Nov. 30, 1976
3990093 Deep buried layers for semiconductor devices Nov. 2, 1976
3988760 Deep diode bilateral semiconductor switch Oct. 26, 1976
3988757 Deep diode zeners Oct. 26, 1976
3988770 Deep finger diodes Oct. 26, 1976
3988763 Isolation junctions for semiconductors devices Oct. 26, 1976
3988764 Deep diode solid state inductor coil Oct. 26, 1976
3988766 Multiple P-N junction formation with an alloy droplet Oct. 26, 1976
3988767 High voltage deep diode power semiconductor switch Oct. 26, 1976
3988768 Deep diode silicon controlled rectifier Oct. 26, 1976
3988769 High voltage diodes Oct. 26, 1976
3988771 Spatial control of lifetime in semiconductor device Oct. 26, 1976
3988772 Current isolation means for integrated power devices Oct. 26, 1976
3982268 Deep diode lead throughs Sep. 21, 1976

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