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Class Information
Number: 257/44
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > With metal contact alloyed to elemental semiconductor type pn junction in nonregenerative structure
Description: Subject matter under the class definition wherein the active solid-state device has a pn junction formed by alloying one or more impurity metal contacts to an elemental semiconductor, and wherein the active solid-state device is not

Sub-classes under this class:

Class Number Class Name Patents
257/45 Elongated alloyed region (e.g., thermal gradient zone melting, tgzm) 53
257/47 In bipolar transistor structure 55
257/46 In pn junction tunnel diode (esaki diode) 71

Patents under this class:
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Patent Number Title Of Patent Date Issued
8709881 Direct chemical vapor deposition of graphene on dielectric surfaces Apr. 29, 2014
8692244 Semiconductor device Apr. 8, 2014
8669554 Fast recovery reduced p-n junction rectifier Mar. 11, 2014
8629429 Electrode device for organic device and electronic device having the same Jan. 14, 2014
8581367 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center Nov. 12, 2013
8507357 Method for lift-off of light-emitting diode substrate Aug. 13, 2013
8384083 Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films Feb. 26, 2013
8361834 Methods of forming a low resistance silicon-metal contact Jan. 29, 2013
8304770 Active device array substrate Nov. 6, 2012
8278658 Electrically connected graphene-metal electrode device, and electronic device, electronic integrated circuit and electro-optical integrated circuit using same Oct. 2, 2012
8133750 Method for forming extended gate field effect transistor (EGFET) based sensor and the sensor therefrom Mar. 13, 2012
8036031 Semiconductor device having a field effect source/drain region Oct. 11, 2011
7964867 Switching element, switching element fabriction method, reconfigurable logic integrated circuit, and memory element Jun. 21, 2011
7919774 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof Apr. 5, 2011
7902051 Method for fabrication of single crystal diodes for resistive memories Mar. 8, 2011
7880166 Fast recovery reduced p-n junction rectifier Feb. 1, 2011
7807995 Nonvolatile semiconductor memory apparatus and manufacturing method thereof Oct. 5, 2010
7704866 Methods for forming composite nanoparticle-metal metallization contacts on a substrate Apr. 27, 2010
7705348 Semiconductor light-emitting device with electrode for N-polar InGaAIN surface Apr. 27, 2010
7692178 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof Apr. 6, 2010
7511297 Phase change memory device and method of fabricating the same Mar. 31, 2009
7511346 Design of high-frequency substrate noise isolation in BiCMOS technology Mar. 31, 2009
7501650 P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element Mar. 10, 2009
7405419 Unidirectionally conductive materials for interconnection Jul. 29, 2008
7321157 CoSb.sub.3-based thermoelectric device fabrication method Jan. 22, 2008
7241677 Process for producing integrated circuits including reduction using gaseous organic compounds Jul. 10, 2007
7229676 Thermal imaging processes and products of electroactive organic material Jun. 12, 2007
7227177 Doped semiconductor nanocrystals Jun. 5, 2007
7205626 Light-emitting or light-receiving with plurality of particle-shaped semiconductor devices having light-emitting or light-receiving properties Apr. 17, 2007
7164188 Buried conductor patterns formed by surface transformation of empty spaces in solid state materials Jan. 16, 2007
7115909 Light emitting device and method of manufacturing the same Oct. 3, 2006
7109528 Light receiving or emitting semiconductor apparatus Sep. 19, 2006
7105866 Heterojunction tunneling diodes and process for fabricating same Sep. 12, 2006
7057202 Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof Jun. 6, 2006
6951689 Substrate with transparent conductive layer, and photovoltaic element Oct. 4, 2005
6939604 Doped semiconductor nanocrystals Sep. 6, 2005
6888172 Apparatus and method for encapsulating an OLED formed on a flexible substrate May. 3, 2005
6858866 III-nitride light emitting diode Feb. 22, 2005
6849891 RRAM memory cell electrodes Feb. 1, 2005
6717358 Cascaded organic electroluminescent devices with improved voltage stability Apr. 6, 2004
6642540 Semiconductor integrated circuit device Nov. 4, 2003
6011272 Silicided shallow junction formation and structure with high and low breakdown voltages Jan. 4, 2000
5760482 Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminum bonding layer Jun. 2, 1998
5614727 Thin film diode having large current capability with low turn-on voltages for integrated devices Mar. 25, 1997
5559817 Complaint layer metallization Sep. 24, 1996
5506426 Compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin film Apr. 9, 1996
5323059 Vertical current flow semiconductor device utilizing wafer bonding Jun. 21, 1994
5213906 Composite material comprising a layer of a III-V compound and a layer of rare earth pnictide, production process and application May. 25, 1993
5160985 Insulated gate bipolar transistor Nov. 3, 1992
5148241 Method of manufacturing a Schottky diode device Sep. 15, 1992

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