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Class Information
Number: 257/421
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Responsive to non-electrical signal (e.g., chemical, stress, light, or magnetic field sensors) > Magnetic field
Description: Subject matter wherein the non-electrical signal to which the active solid-state device responds, is a magnetic field.


Sub-classes under this class:

Class Number Class Name Patents
257/423 Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor) 86
257/426 Differential output (e.g., with offset adjustment means or with means to reduce temperature sensitivity) 58
257/425 Magnetic field detector using compound semiconductor material (e.g., gaas, insb, etc.) 90
257/427 Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit) 172
257/424 Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field) 42
257/422 With magnetic field directing means (e.g., shield, pole piece, etc.) 194


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
7622735 Wafer for electrically characterizing tunnel junction film stacks with little or no processing Nov. 24, 2009
7622784 MRAM device with improved stack structure and offset field for low-power toggle mode writing Nov. 24, 2009
7615836 Magnetic self-assembly for integrated circuit packages Nov. 10, 2009
7612424 Nanoelectromechanical bistable cantilever device Nov. 3, 2009
7608901 Spin transistor using stray magnetic field Oct. 27, 2009
7605437 Spin-transfer MRAM structure and methods Oct. 20, 2009
7606063 Magnetic memory device Oct. 20, 2009
7602032 Memory having cap structure for magnetoresistive junction and method for structuring the same Oct. 13, 2009
7602000 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element Oct. 13, 2009
7598578 Magnetic element and signal processing device Oct. 6, 2009
7598579 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current Oct. 6, 2009
7598577 Magnetic memory device Oct. 6, 2009
7595520 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same Sep. 29, 2009
7582942 Planar flux concentrator for MRAM devices Sep. 1, 2009
7582941 Magnetic memory device and method of fabricating the same Sep. 1, 2009
7582892 Optically controlled switching methods based upon the polarization of electromagnetic radiation incident upon carbon nanotubes and electrical-switch systems using such switch devices Sep. 1, 2009
7579196 Interconnect connecting a diffusion metal layer and a power plane metal and fabricating method thereof Aug. 25, 2009
7569902 Enhanced toggle-MRAM memory device Aug. 4, 2009
7569877 System and method based on field-effect transistors for addressing nanometer-scale devices Aug. 4, 2009
7566941 Magnetoresistive memory cell and process for producing the same Jul. 28, 2009
7564109 MRAM and method of manufacturing the same Jul. 21, 2009
7564110 Electrical lapping guides made from tunneling magnetoresistive (TMR) material Jul. 21, 2009
7554145 Magnetic memory cells and manufacturing methods Jun. 30, 2009
7554837 Magnetic memory device Jun. 30, 2009
7545013 Reconfigurable logic circuit using a transistor having spin-dependent transfer characteristics Jun. 9, 2009
7545672 Spin injection write type magnetic memory device Jun. 9, 2009
7538402 Magnetoresistive device and magnetic memory using the same May. 26, 2009
7539051 Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same May. 26, 2009
7535069 Magnetic tunnel junction with enhanced magnetic switching characteristics May. 19, 2009
7535070 Spin-wave architectures May. 19, 2009
7531882 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization May. 12, 2009
7531883 Magneto-resistance transistor and method thereof May. 12, 2009
7532502 Spin injection magnetic domain wall displacement device and element thereof May. 12, 2009
7532504 Spin injection magnetic domain wall displacement device and element thereof May. 12, 2009
7528457 Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R May. 5, 2009
7527983 Ferromagnetic material May. 5, 2009
7528456 Nano-scale computational architectures with spin wave bus May. 5, 2009
7525166 Memory element and memory Apr. 28, 2009
7521743 Nonvolatile magnetic memory device and photomask Apr. 21, 2009
7510883 Magnetic tunnel junction temperature sensors and methods Mar. 31, 2009
7511351 Semiconductor device and method for fabricating the same Mar. 31, 2009
7508042 Spin transfer MRAM device with magnetic biasing Mar. 24, 2009
7508700 Method of magnetic tunneling junction pattern layout for magnetic random access memory Mar. 24, 2009
7505308 Systems involving spin-transfer magnetic random access memory Mar. 17, 2009
7504898 High-frequency oscillator with a stacked film including a magnetization pinned layer Mar. 17, 2009
7501688 Spin injection magnetization reversal element Mar. 10, 2009
7495303 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements Feb. 24, 2009
7492022 Non-magnetic semiconductor spin transistor Feb. 17, 2009
7485937 Tunnel junction device Feb. 3, 2009
7480173 Spin transfer MRAM device with novel magnetic free layer Jan. 20, 2009

1 2 3 4 5 6 7 8 9 10 11 12 13


 
 
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