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Class Information
Number: 257/412
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)
Description: Subject matter wherein the device has a gate electrode which is made of a refractory material (e.g., polysilicon or a silicide of a metal found in groups IVA, VA, VIA, or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements.

Sub-classes under this class:

Class Number Class Name Patents
257/413 Polysilicon laminated with silicide 519

Patents under this class:

Patent Number Title Of Patent Date Issued
8710596 Semiconductor device Apr. 29, 2014
8704206 Memory device including transistor array with shared plate channel and method for making the same Apr. 22, 2014
8680619 Method of fabricating hybrid impact-ionization semiconductor device Mar. 25, 2014
8679962 Integrated circuit metal gate structure and method of fabrication Mar. 25, 2014
8674410 Method of manufacturing metal silicide and semiconductor structure using the same Mar. 18, 2014
8674359 TFT, array substrate for display apparatus including TFT, and methods of manufacturing TFT and array substrate Mar. 18, 2014
8669624 Semiconductor device and manufacturing method thereof Mar. 11, 2014
8669618 Manufacturing method for semiconductor device having metal gate Mar. 11, 2014
8664721 FET with FUSI gate and reduced source/drain contact resistance Mar. 4, 2014
8659097 Control fin heights in FinFET structures Feb. 25, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8653610 High performance non-planar semiconductor devices with metal filled inter-fin gaps Feb. 18, 2014
8652890 Methods for fabricating integrated circuits with narrow, metal filled openings Feb. 18, 2014
8648425 Resistors formed based on metal-oxide-semiconductor structures Feb. 11, 2014
8643126 Self aligned silicided contacts Feb. 4, 2014
8643125 Structure and process for microelectromechanical system-based sensor Feb. 4, 2014
8643121 Semiconductor device and method of manufacturing a semiconductor device Feb. 4, 2014
8637942 Transistor having a metal nitride layer pattern, etchant and methods of forming the same Jan. 28, 2014
8633546 Semiconductor device Jan. 21, 2014
8629515 Metal gate semiconductor device Jan. 14, 2014
8624324 Connecting through vias to devices Jan. 7, 2014
8624315 Field effect transistor having an asymmetric gate electrode Jan. 7, 2014
8604556 Gate pattern of semiconductor device and method for fabricating the same Dec. 10, 2013
8592924 Semiconductor device including gate electrode having a laminate structure and a plug electrically connected thereto Nov. 26, 2013
8587062 Silicon on insulator (SOI) field effect transistors (FETs) with adjacent body contacts Nov. 19, 2013
8581353 Multi-layer gate dielectric Nov. 12, 2013
8581350 Field effect transistor and semiconductor device, and method for manufacturing same Nov. 12, 2013
8581339 Structure of NPN-BJT for improving punch through between collector and emitter Nov. 12, 2013
8575709 High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof Nov. 5, 2013
8575012 Semiconductor device production method and semiconductor device Nov. 5, 2013
8569844 Metal gate CMOS with at least a single gate metal and dual gate dielectrics Oct. 29, 2013
8569135 Replacement gate electrode with planar work function material layers Oct. 29, 2013
8564074 Self-limiting oxygen seal for high-K dielectric and design structure Oct. 22, 2013
8564063 Semiconductor device having metal gate and manufacturing method thereof Oct. 22, 2013
8558325 Ruthenium for a dielectric containing a lanthanide Oct. 15, 2013
8558300 Method for fabricating a flash memory cell utilizing a high-K metal gate process and related structure Oct. 15, 2013
8552511 Semiconductor device and manufacturing method thereof Oct. 8, 2013
8551874 MOSFET gate and source/drain contact metallization Oct. 8, 2013
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8530974 CMOS structure having multiple threshold voltage devices Sep. 10, 2013
8525304 Semiconductor device Sep. 3, 2013
8525270 Structures and methods to stop contact metal from extruding into replacement gates Sep. 3, 2013
8524564 Full silicidation prevention via dual nickel deposition approach Sep. 3, 2013
8507991 Semiconductor device and method of manufacturing the same Aug. 13, 2013
8502325 Metal high-K transistor having silicon sidewalls for reduced parasitic capacitance Aug. 6, 2013
8492854 Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same Jul. 23, 2013
8492853 Field effect transistor having conductor electrode in contact with semiconductor layer Jul. 23, 2013
8487382 Device scheme of HKMG gate-last process Jul. 16, 2013
8486819 Semiconductor device and method of manufacturing the same Jul. 16, 2013
8482043 Method for improving transistor performance through reducing the salicide interface resistance Jul. 9, 2013

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