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Class Information
Number: 257/412
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)
Description: Subject matter wherein the device has a gate electrode which is made of a refractory material (e.g., polysilicon or a silicide of a metal found in groups IVA, VA, VIA, or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622387 |
Gate electrode silicidation process |
Nov. 24, 2009 |
| 7615803 |
Method for manufacturing transistor and image display device using the same |
Nov. 10, 2009 |
| 7615831 |
Structure and method for fabricating self-aligned metal contacts |
Nov. 10, 2009 |
| 7605414 |
MOS transistors having low-resistance salicide gates and a self-aligned contact between them |
Oct. 20, 2009 |
| 7598536 |
Semiconductor device having load resistor and method of fabricating the same |
Oct. 6, 2009 |
| 7592674 |
Semiconductor device with silicide-containing gate electrode and method of fabricating the same |
Sep. 22, 2009 |
| 7585756 |
Semiconductor device and method of manufacturing the same |
Sep. 8, 2009 |
| 7576397 |
Semiconductor device |
Aug. 18, 2009 |
| 7576399 |
Semiconductor device and method of manufacture thereof |
Aug. 18, 2009 |
| 7573106 |
Semiconductor device and manufacturing method therefor |
Aug. 11, 2009 |
| 7566937 |
MOS transistor including multi-work function metal nitride gate electrode, COMS integrated circuit device including same, and related methods of manufacture |
Jul. 28, 2009 |
| 7564081 |
finFET structure with multiply stressed gate electrode |
Jul. 21, 2009 |
| 7560331 |
Method for forming a silicided gate |
Jul. 14, 2009 |
| 7554161 |
HfAlO.sub.3 films for gate dielectrics |
Jun. 30, 2009 |
| 7545009 |
Word lines for memory cells |
Jun. 9, 2009 |
| 7541650 |
Gate electrode structures |
Jun. 2, 2009 |
| 7541657 |
Semiconductor device and method for manufacturing the same |
Jun. 2, 2009 |
| 7531881 |
Semiconductor devices having transistors with different gate structures and methods of fabricating the same |
May. 12, 2009 |
| 7528451 |
CMOS gate conductor having cross-diffusion barrier |
May. 5, 2009 |
| 7528450 |
Semiconductor device having NMOSFET and PMOSFET and manufacturing method therefor |
May. 5, 2009 |
| 7521346 |
Method of forming HfSiN metal for n-FET applications |
Apr. 21, 2009 |
| 7514360 |
Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof |
Apr. 7, 2009 |
| 7514732 |
Image pickup apparatus and image pickup system having plural semiconductor regions of a same conductivity type, with one of the semiconductor regions having a higher impurity concentration tha |
Apr. 7, 2009 |
| 7514753 |
Semiconductor device |
Apr. 7, 2009 |
| 7511350 |
Nickel alloy silicide including indium and a method of manufacture therefor |
Mar. 31, 2009 |
| 7508075 |
Self-aligned poly-metal structures |
Mar. 24, 2009 |
| 7508074 |
Etch stop layer in poly-metal structures |
Mar. 24, 2009 |
| 7504691 |
Power trench MOSFETs having SiGe/Si channel structure |
Mar. 17, 2009 |
| 7501668 |
Semiconductor memory devices having contact pads with silicide caps thereon |
Mar. 10, 2009 |
| 7501333 |
Work function adjustment on fully silicided (FUSI) gate |
Mar. 10, 2009 |
| 7498641 |
Partial replacement silicide gate |
Mar. 3, 2009 |
| 7495299 |
Semiconductor device |
Feb. 24, 2009 |
| 7495290 |
Semiconductor devices and methods of manufacture thereof |
Feb. 24, 2009 |
| 7495298 |
Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same |
Feb. 24, 2009 |
| 7485934 |
Integrated semiconductor structure for SRAM cells |
Feb. 3, 2009 |
| 7473975 |
Fully silicided metal gate semiconductor device structure |
Jan. 6, 2009 |
| 7473626 |
Control of poly-Si depletion in CMOS via gas phase doping |
Jan. 6, 2009 |
| 7470605 |
Method for fabrication of a MOS transistor |
Dec. 30, 2008 |
| 7470961 |
Semiconductor device and method of manufacturing the same |
Dec. 30, 2008 |
| 7462554 |
Method for forming semiconductor device with modified channel compressive stress |
Dec. 9, 2008 |
| 7459756 |
Method for forming a device having multiple silicide types |
Dec. 2, 2008 |
| 7459758 |
Transistor structure and method for making same |
Dec. 2, 2008 |
| 7453127 |
Double-diffused-drain MOS device with floating non-insulator spacers |
Nov. 18, 2008 |
| 7446381 |
Semiconductor memory device and method for fabricating the same |
Nov. 4, 2008 |
| 7446380 |
Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS |
Nov. 4, 2008 |
| 7439140 |
Formation of standard voltage threshold and low voltage threshold MOSFET devices |
Oct. 21, 2008 |
| 7439596 |
Transistors for semiconductor device and methods of fabricating the same |
Oct. 21, 2008 |
| 7435652 |
Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET |
Oct. 14, 2008 |
| 7436034 |
Metal oxynitride as a pFET material |
Oct. 14, 2008 |
| 7432567 |
Metal gate CMOS with at least a single gate metal and dual gate dielectrics |
Oct. 7, 2008 |
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