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Class Information
Number: 257/411
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Gate insulator includes material (including air or vacuum) other than sio 2 > Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)
Description: Subject matter wherein the gate insulator is made of a composite material or layers of different materials.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8686517 Self-aligned insulating etchstop layer on a metal contact Apr. 1, 2014
8674456 High-K transistors with low threshold voltage Mar. 18, 2014
8669184 Method for improving flatness of a layer deposited on polycrystalline layer Mar. 11, 2014
8669624 Semiconductor device and manufacturing method thereof Mar. 11, 2014
8664053 Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the same Mar. 4, 2014
8659071 Method and structure to improve the erasing speed operation of SONOS memory device having a graded silicon nitride layer Feb. 25, 2014
8659094 Array substrate for liquid crystal display device and method of fabricating the same Feb. 25, 2014
8653610 High performance non-planar semiconductor devices with metal filled inter-fin gaps Feb. 18, 2014
8653611 Semiconductor device with metal gates and method for fabricating the same Feb. 18, 2014
8653561 III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device Feb. 18, 2014
8648426 Tunneling transistors Feb. 11, 2014
8643124 Oxide-nitride-oxide stack having multiple oxynitride layers Feb. 4, 2014
8633544 Twin MONOS array for high speed application Jan. 21, 2014
8633546 Semiconductor device Jan. 21, 2014
8629022 Asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same Jan. 14, 2014
8629028 Metal oxide semiconductor field effect transistor (MOSFET) gate termination Jan. 14, 2014
8624327 Integrated semiconductor structure for SRAM and fabrication methods thereof Jan. 7, 2014
8614152 Gate structure and a method for forming the same Dec. 24, 2013
8604536 Semiconductor device and method of manufacturing the same Dec. 10, 2013
8592803 Germanium-based quantum well devices Nov. 26, 2013
8587076 Semiconductor device Nov. 19, 2013
8581351 Replacement gate with reduced gate leakage current Nov. 12, 2013
8581352 Electronic devices including barium strontium titanium oxide films Nov. 12, 2013
8581353 Multi-layer gate dielectric Nov. 12, 2013
8575720 Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device Nov. 5, 2013
8575709 High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof Nov. 5, 2013
8575597 Liquid metal contact as possible element for thermotunneling Nov. 5, 2013
8575012 Semiconductor device production method and semiconductor device Nov. 5, 2013
8564074 Self-limiting oxygen seal for high-K dielectric and design structure Oct. 22, 2013
8558325 Ruthenium for a dielectric containing a lanthanide Oct. 15, 2013
8558324 Composite dielectric thin film, capacitor and field effect transistor using the same, and each fabrication method thereof Oct. 15, 2013
8558321 Semiconductor device having gate insulating film including high dielectric material Oct. 15, 2013
8557651 Method of manufacturing a semiconductor device using an etchant Oct. 15, 2013
8551874 MOSFET gate and source/drain contact metallization Oct. 8, 2013
8552507 Semiconductor device and method of manufacturing the same Oct. 8, 2013
8546854 Semiconductor device and method for manufacturing the same Oct. 1, 2013
8541842 High-k transistors with low threshold voltage Sep. 24, 2013
8536656 Self-aligned contacts for high k/metal gate process flow Sep. 17, 2013
8530979 Semiconductor package and method for manufacturing the same Sep. 10, 2013
8530954 Non-volatile memory devices including first and second blocking layer patterns Sep. 10, 2013
8530980 Gate stack structure with etch stop layer and manufacturing process thereof Sep. 10, 2013
8524554 Semiconductor device and method for fabricating the same Sep. 3, 2013
8525274 Semiconductor device and method of manufacturing the same Sep. 3, 2013
8525275 Methods of forming non-volatile memory devices Sep. 3, 2013
8519488 III-V metal-oxide-semiconductor device Aug. 27, 2013
8507894 Control and readout of electron or hole spin Aug. 13, 2013
8507338 Semiconductor structure and fabricating method thereof Aug. 13, 2013
8501550 Method of fabricating gate and method of manufacturing semiconductor device using the same Aug. 6, 2013
8502326 Gate dielectric formation for high-voltage MOS devices Aug. 6, 2013
8492851 Structures including an at least partially reoxidized oxide material Jul. 23, 2013

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