| |
 |
|
Class Information
Number: 257/410
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Gate insulator includes material (including air or vacuum) other than sio 2
Description: Subject matter wherein the gate electrode insulator includes material other than silicon dioxide.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619272 |
Bi-axial texturing of high-K dielectric films to reduce leakage currents |
Nov. 17, 2009 |
| 7605436 |
Manufacture of semiconductor device having insulation film of high dielectric constant |
Oct. 20, 2009 |
| 7602016 |
Semiconductor apparatus and method of manufacturing the same |
Oct. 13, 2009 |
| 7602030 |
Hafnium tantalum oxide dielectrics |
Oct. 13, 2009 |
| 7602003 |
Semiconductor device structure for reducing hot carrier effect of MOS transistor |
Oct. 13, 2009 |
| 7598568 |
Semiconductor apparatus and method of manufacturing the same |
Oct. 6, 2009 |
| 7595538 |
Semiconductor device |
Sep. 29, 2009 |
| 7592678 |
CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof |
Sep. 22, 2009 |
| 7586159 |
Semiconductor devices having different gate dielectrics and methods for manufacturing the same |
Sep. 8, 2009 |
| 7586163 |
Semiconductor device having an electrode containing boron and manufacturing method thereof |
Sep. 8, 2009 |
| 7582494 |
Device structures for reducing device mismatch due to shallow trench isolation induced oxides stresses |
Sep. 1, 2009 |
| 7579661 |
Semiconductor device, electronic device and electronic apparatus |
Aug. 25, 2009 |
| 7579227 |
Semiconductor device and method for fabricating the same |
Aug. 25, 2009 |
| 7573065 |
Semiconductor device evaluation method |
Aug. 11, 2009 |
| 7573081 |
Method to fabricate horizontal air columns underneath metal inductor |
Aug. 11, 2009 |
| 7573110 |
Method of fabricating semiconductor devices |
Aug. 11, 2009 |
| 7564108 |
Nitrogen treatment to improve high-k gate dielectrics |
Jul. 21, 2009 |
| 7560344 |
Semiconductor device having a pair of fins and method of manufacturing the same |
Jul. 14, 2009 |
| 7557416 |
Transistor and CVD apparatus used to deposit gate insulating film thereof |
Jul. 7, 2009 |
| 7554156 |
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same |
Jun. 30, 2009 |
| 7554161 |
HfAlO.sub.3 films for gate dielectrics |
Jun. 30, 2009 |
| 7547952 |
Method for hafnium nitride deposition |
Jun. 16, 2009 |
| 7547951 |
Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same |
Jun. 16, 2009 |
| 7538376 |
Semiconductor integrated circuit device including a semiconductor device having a stable threshold characteristic |
May. 26, 2009 |
| 7535047 |
Semiconductor device containing an ultra thin dielectric film or dielectric layer |
May. 19, 2009 |
| 7535066 |
Gate structure and method |
May. 19, 2009 |
| 7535067 |
Transistor in semiconductor devices and method of fabricating the same |
May. 19, 2009 |
| 7528434 |
Production process for a semiconductor component with a praseodymium oxide dielectric |
May. 5, 2009 |
| 7525144 |
Insulating film and semiconductor device |
Apr. 28, 2009 |
| 7521325 |
Semiconductor device and method for fabricating the same |
Apr. 21, 2009 |
| 7511326 |
ALD of amorphous lanthanide doped TiO.sub.x films |
Mar. 31, 2009 |
| 7511321 |
Method for forming a dielectric layer and related devices |
Mar. 31, 2009 |
| 7507629 |
Semiconductor devices having an interfacial dielectric layer and related methods |
Mar. 24, 2009 |
| 7504699 |
Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections |
Mar. 17, 2009 |
| 7504700 |
Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method |
Mar. 17, 2009 |
| 7501683 |
Integrated circuit with protected implantation profiles and method for the formation thereof |
Mar. 10, 2009 |
| 7498643 |
Semiconductor device and method for manufacturing the same |
Mar. 3, 2009 |
| 7492006 |
Semiconductor transistors having surface insulation layers and methods of fabricating such transistors |
Feb. 17, 2009 |
| 7482623 |
Organic semiconductor film and organic semiconductor device |
Jan. 27, 2009 |
| 7479683 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics |
Jan. 20, 2009 |
| 7479684 |
Field effect transistor including damascene gate with an internal spacer structure |
Jan. 20, 2009 |
| 7473652 |
Organic polymers, electronic devices, and methods |
Jan. 6, 2009 |
| 7462554 |
Method for forming semiconductor device with modified channel compressive stress |
Dec. 9, 2008 |
| 7459757 |
Transistor structures |
Dec. 2, 2008 |
| 7456468 |
Semiconductor device including high-k insulating layer and method of manufacturing the same |
Nov. 25, 2008 |
| 7449756 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode |
Nov. 11, 2008 |
| 7446367 |
Reliable gap-filling process and apparatus for performing the process in the manufacturing of semiconductor devices |
Nov. 4, 2008 |
| 7436034 |
Metal oxynitride as a pFET material |
Oct. 14, 2008 |
| 7432569 |
FET gate structure and fabrication process |
Oct. 7, 2008 |
| 7427573 |
Forming composite metal oxide layer with hafnium oxide and titanium oxide |
Sep. 23, 2008 |
|
|
|
