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Class Information
Number: 257/409
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.)
Description: Subject matter wherein the device has means to increase the voltage that can be applied to the device without causing electrical breakdown of the device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7411257 |
Semiconductor device having guard ring and manufacturing method thereof |
Aug. 12, 2008 |
| 7408206 |
Method and structure for charge dissipation in integrated circuits |
Aug. 5, 2008 |
| 7408234 |
Semiconductor device and method for manufacturing the same |
Aug. 5, 2008 |
| 7409660 |
Method and end cell library for avoiding substrate noise in an integrated circuit |
Aug. 5, 2008 |
| 7405452 |
Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
Jul. 29, 2008 |
| 7405458 |
Asymmetric field transistors (FETs) |
Jul. 29, 2008 |
| 7397083 |
Trench fet with self aligned source and contact |
Jul. 8, 2008 |
| 7394137 |
Semiconductor device |
Jul. 1, 2008 |
| 7391093 |
Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film |
Jun. 24, 2008 |
| 7388266 |
Structure for leakage prevention of a high voltage device |
Jun. 17, 2008 |
| 7382030 |
Integrated metal shield for a field effect transistor |
Jun. 3, 2008 |
| 7375398 |
High voltage FET gate structure |
May. 20, 2008 |
| 7372103 |
MOS field plate trench transistor device |
May. 13, 2008 |
| 7368785 |
MOS transistor device structure combining Si-trench and field plate structures for high voltage device |
May. 6, 2008 |
| 7368793 |
HEMT transistor semiconductor device |
May. 6, 2008 |
| 7358577 |
High voltage field effect transistor |
Apr. 15, 2008 |
| 7355257 |
Semiconductor superjunction device |
Apr. 8, 2008 |
| 7348643 |
Semiconductor dual guardring arrangement |
Mar. 25, 2008 |
| 7345341 |
High voltage semiconductor devices and methods for fabricating the same |
Mar. 18, 2008 |
| 7339236 |
Semiconductor device, driver circuit and manufacturing method of semiconductor device |
Mar. 4, 2008 |
| 7337425 |
Structured ASIC device with configurable die size and selectable embedded functions |
Feb. 26, 2008 |
| 7329922 |
Dual-gate metal-oxide semiconductor device |
Feb. 12, 2008 |
| 7329937 |
Asymmetric field effect transistors (FETs) |
Feb. 12, 2008 |
| 7312481 |
Reliable high-voltage junction field effect transistor and method of manufacture therefor |
Dec. 25, 2007 |
| 7309900 |
Thin-film transistor formed on insulating substrate |
Dec. 18, 2007 |
| 7307314 |
LDMOS transistor with improved gate shield |
Dec. 11, 2007 |
| 7304356 |
IGBT or like semiconductor device of high voltage-withstanding capability |
Dec. 4, 2007 |
| 7304354 |
Buried guard ring and radiation hardened isolation structures and fabrication methods |
Dec. 4, 2007 |
| 7301179 |
Semiconductor device having a high breakdown voltage transistor formed thereon |
Nov. 27, 2007 |
| 7301209 |
Semiconductor device |
Nov. 27, 2007 |
| 7301796 |
Memory cells utilizing metal-to-metal capacitors to reduce susceptibility to single event upsets |
Nov. 27, 2007 |
| 7294932 |
Semiconductor device |
Nov. 13, 2007 |
| 7282765 |
Power LDMOS transistor |
Oct. 16, 2007 |
| 7274077 |
Trench transistor |
Sep. 25, 2007 |
| 7262471 |
Drain extended PMOS transistor with increased breakdown voltage |
Aug. 28, 2007 |
| 7253487 |
Integrated circuit chip having a seal ring, a ground ring and a guard ring |
Aug. 7, 2007 |
| 7253486 |
Field plate transistor with reduced field plate resistance |
Aug. 7, 2007 |
| 7244975 |
High-voltage device structure |
Jul. 17, 2007 |
| 7238987 |
Lateral semiconductor device and method for producing the same |
Jul. 3, 2007 |
| 7238991 |
Semiconductor device with improved protection from electrostatic discharge |
Jul. 3, 2007 |
| 7233046 |
Semiconductor device and fabrication method thereof |
Jun. 19, 2007 |
| 7230313 |
Voltage divider field plate termination with unequal fixed biasing |
Jun. 12, 2007 |
| 7224021 |
MOSFET with high angle sidewall gate and contacts for reduced miller capacitance |
May. 29, 2007 |
| 7196392 |
Semiconductor structure for isolating integrated circuits of various operation voltages |
Mar. 27, 2007 |
| 7176539 |
Layout of semiconductor device with substrate-triggered ESD protection |
Feb. 13, 2007 |
| 7176538 |
High voltage MOSFET having doped buried layer |
Feb. 13, 2007 |
| 7170109 |
Heterojunction semiconductor device with element isolation structure |
Jan. 30, 2007 |
| 7170138 |
Semiconductor device |
Jan. 30, 2007 |
| 7148540 |
Graded conductive structure for use in a metal-oxide-semiconductor device |
Dec. 12, 2006 |
| 7145211 |
Seal ring for mixed circuitry semiconductor devices |
Dec. 5, 2006 |
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