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Class Information
Number: 257/408
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, ldd device)
Description: Subject matter wherein the device includes a drain portion adjacent the current channel which is lightly doped with impurities.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7602029 |
Configuration and method of manufacturing the one-time programmable (OTP) memory cells |
Oct. 13, 2009 |
| 7602019 |
Drive circuit and drain extended transistor for use therein |
Oct. 13, 2009 |
| 7598575 |
Semiconductor die with reduced RF attenuation |
Oct. 6, 2009 |
| 7554156 |
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same |
Jun. 30, 2009 |
| 7554116 |
Display device |
Jun. 30, 2009 |
| 7547592 |
PMOS depletable drain extension made from NMOS dual depletable drain extensions |
Jun. 16, 2009 |
| 7545006 |
CMOS devices with graded silicide regions |
Jun. 9, 2009 |
| 7544996 |
Methods of fabricating a semiconductor device having a metal gate pattern |
Jun. 9, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7538387 |
Stack SiGe for short channel improvement |
May. 26, 2009 |
| 7535065 |
Thin film transistor device utilizing transistors of differing material characteristics |
May. 19, 2009 |
| 7528445 |
Wing gate transistor for integrated circuits |
May. 5, 2009 |
| 7528442 |
Semiconductor device and manufacturing method thereof |
May. 5, 2009 |
| 7525165 |
Light emitting device and manufacturing method thereof |
Apr. 28, 2009 |
| 7525158 |
Semiconductor device having pixel electrode and peripheral circuit |
Apr. 28, 2009 |
| 7521768 |
Electric device comprising an LDMOS transistor |
Apr. 21, 2009 |
| 7521767 |
MOS transistor in a semiconductor device |
Apr. 21, 2009 |
| 7518198 |
Transistor and method for manufacturing the same |
Apr. 14, 2009 |
| 7514744 |
Semiconductor device including carrier accumulation layers |
Apr. 7, 2009 |
| 7511340 |
Semiconductor devices having gate structures and contact pads that are lower than the gate structures |
Mar. 31, 2009 |
| 7498642 |
Profile confinement to improve transistor performance |
Mar. 3, 2009 |
| 7495297 |
Semiconductor device and method for manufacturing the same |
Feb. 24, 2009 |
| 7495295 |
Semiconductor device and method for fabricating the same |
Feb. 24, 2009 |
| 7492029 |
Asymmetric field effect transistors (FETs) |
Feb. 17, 2009 |
| 7492017 |
Semiconductor transistor having a stressed channel |
Feb. 17, 2009 |
| 7491988 |
Transistors with increased mobility in the channel zone and method of fabrication |
Feb. 17, 2009 |
| 7482233 |
Embedded non-volatile memory cell with charge-trapping sidewall spacers |
Jan. 27, 2009 |
| 7473976 |
Lateral power transistor with self-biasing electrodes |
Jan. 6, 2009 |
| 7470956 |
Semiconductor device and manufacturing method thereof |
Dec. 30, 2008 |
| 7465978 |
Field effect transistor with a high breakdown voltage and method of manufacturing the same |
Dec. 16, 2008 |
| 7456448 |
Semiconductor device and method for producing the same |
Nov. 25, 2008 |
| 7453088 |
Electro-optical device and manufacturing method thereof |
Nov. 18, 2008 |
| 7446377 |
Transistors and manufacturing methods thereof |
Nov. 4, 2008 |
| 7446375 |
Quasi-vertical LDMOS device having closed cell layout |
Nov. 4, 2008 |
| 7436035 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
Oct. 14, 2008 |
| 7436026 |
Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions |
Oct. 14, 2008 |
| 7429771 |
Semiconductor device having halo implanting regions |
Sep. 30, 2008 |
| RE40486 |
Self-aligned non-volatile memory cell |
Sep. 9, 2008 |
| 7420250 |
Electrostatic discharge protection device having light doped regions |
Sep. 2, 2008 |
| 7414292 |
Semiconductor device and its manufacturing method |
Aug. 19, 2008 |
| 7414266 |
Semiconductor device and manufacturing method thereof |
Aug. 19, 2008 |
| 7408234 |
Semiconductor device and method for manufacturing the same |
Aug. 5, 2008 |
| 7408233 |
Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region |
Aug. 5, 2008 |
| 7405458 |
Asymmetric field transistors (FETs) |
Jul. 29, 2008 |
| 7405450 |
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon |
Jul. 29, 2008 |
| 7405443 |
Dual gate lateral double-diffused MOSFET (LDMOS) transistor |
Jul. 29, 2008 |
| 7402872 |
Method for forming an integrated circuit |
Jul. 22, 2008 |
| 7400018 |
End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon doping |
Jul. 15, 2008 |
| 7388265 |
Thin film transistor and fabrication method thereof |
Jun. 17, 2008 |
| 7388264 |
Semiconductor device having LDD-type source/drain regions and fabrication method thereof |
Jun. 17, 2008 |
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