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Class Information
Number: 257/408
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, ldd device)
Description: Subject matter wherein the device includes a drain portion adjacent the current channel which is lightly doped with impurities.

Patents under this class:

Patent Number Title Of Patent Date Issued
8686498 Lateral double diffused MOS device and method for manufacturing the same Apr. 1, 2014
8669147 Methods of forming high mobility fin channels on three dimensional semiconductor devices Mar. 11, 2014
8659020 Epitaxial silicon wafer and method for manufacturing same Feb. 25, 2014
8643122 Silicide contacts having different shapes on regions of a semiconductor device Feb. 4, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure Feb. 4, 2014
8638594 Integrated circuits with asymmetric transistors Jan. 28, 2014
8637942 Transistor having a metal nitride layer pattern, etchant and methods of forming the same Jan. 28, 2014
8637939 Semiconductor device and method for fabricating the same Jan. 28, 2014
8629502 MOSFET with recessed channel film and abrupt junctions Jan. 14, 2014
8618613 Methods of forming secured metal gate antifuse structures Dec. 31, 2013
8614486 Low resistance source and drain extensions for ETSOI Dec. 24, 2013
8614133 Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor Dec. 24, 2013
8610207 Semiconductor architecture having field-effect transistors especially suitable for analog applications Dec. 17, 2013
8604564 Semiconductor structures and methods of manufacturing the same Dec. 10, 2013
8603872 Field effect device provided with a localized dopant diffusion barrier area and fabrication method Dec. 10, 2013
8598670 Semiconductor device with increased breakdown voltage Dec. 3, 2013
8592900 Drain extended CMOS with counter-doped drain extension Nov. 26, 2013
8592264 Source-drain extension formation in replacement metal gate transistor device Nov. 26, 2013
8587056 High-voltage metal-oxide-semiconductor device Nov. 19, 2013
8574991 Asymmetric transistor devices formed by asymmetric spacers and tilted implantation Nov. 5, 2013
8569847 Nonvolatile semiconductor memory device Oct. 29, 2013
8569846 MOS devices with improved source/drain regions with SiGe Oct. 29, 2013
8569845 Strained silicon device Oct. 29, 2013
8569798 Semicondcutor device comprising transistor Oct. 29, 2013
8564073 Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer Oct. 22, 2013
8563382 Semiconductor device Oct. 22, 2013
8558310 Indium, carbon and halogen doping for PMOS transistors Oct. 15, 2013
8558307 Semiconductor device with diffused MOS transistor and manufacturing method of the same Oct. 15, 2013
8557674 High voltage semiconductor device including field shaping layer and method of fabricating the same Oct. 15, 2013
8552511 Semiconductor device and manufacturing method thereof Oct. 8, 2013
8541823 Field effect transistor Sep. 24, 2013
8541296 Method of manufacturing dummy gates in gate last process Sep. 24, 2013
8536658 Mechanisms for forming ultra shallow junction Sep. 17, 2013
8530977 Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant Sep. 10, 2013
8525342 Dual-side interconnected CMOS for stacked integrated circuits Sep. 3, 2013
8519486 Semiconductor device having a plurality of phosphorus-doped silicon carbide layers Aug. 27, 2013
8513738 ESD field-effect transistor and integrated diffusion resistor Aug. 20, 2013
RE44430 PMOS depletable drain extension made from NMOS dual depletable drain extensions Aug. 13, 2013
8507987 Radio frequency device and method for fabricating the same Aug. 13, 2013
8487376 High-voltage transistor architectures, processes of forming same, and systems containing same Jul. 16, 2013
8482075 Structure and method for manufacturing asymmetric devices Jul. 9, 2013
8476139 High performance MOSFET Jul. 2, 2013
8471337 Integrated circuit Jun. 25, 2013
8466520 Transistor with an embedded strain-inducing material having a gradually shaped configuration Jun. 18, 2013
8466030 Semiconductor device and fabricating method thereof Jun. 18, 2013
8450814 Extended drain lateral DMOS transistor with reduced gate charge and self-aligned extended drain May. 28, 2013
8450161 Method of fabricating a sealing structure for high-k metal gate May. 28, 2013
8421191 Monolayer dopant embedded stressor for advanced CMOS Apr. 16, 2013
8421160 Structure and method to enabling a borderless contact to source regions and drain regions of a complementary metal oxide semiconductor (CMOS) transistor Apr. 16, 2013

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