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Class Information
Number: 257/407
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With gate electrode of controlled workfunction material (e.g., low workfunction gate material)
Description: Subject matter wherein the device has a gate electrode selected to have a controlled amount of minimum energy needed to be applied thereto to liberate an electron from its Fermi-level and send it into free space.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
6770944 Semiconductor device having counter and channel impurity regions Aug. 3, 2004
6762469 High performance CMOS device structure with mid-gap metal gate Jul. 13, 2004
6762468 Semiconductor device and method of manufacturing the same Jul. 13, 2004
6750519 Dual metal gate process: metals and their silicides Jun. 15, 2004
6734510 Technique to mitigate short channel effects with vertical gate transistor with different gate materials May. 11, 2004
6724054 Self-aligned contact formation using double SiN spacers Apr. 20, 2004
6713824 Reliable semiconductor device and method of manufacturing the same Mar. 30, 2004
6713846 Multilayer high .kappa. dielectric films Mar. 30, 2004
6703672 Polysilicon/amorphous silicon composite gate electrode Mar. 9, 2004
6703673 SOI DRAM having P-doped poly gate for a memory pass transistor Mar. 9, 2004
6696345 Metal-gate electrode for CMOS transistor applications Feb. 24, 2004
6693333 Semiconductor-on-insulator circuit with multiple work functions Feb. 17, 2004
6680503 Field-effect transistor structure with an insulated gate Jan. 20, 2004
6677652 Methods to form dual metal gates by incorporating metals and their conductive oxides Jan. 13, 2004
6667525 Semiconductor device having hetero grain stack gate Dec. 23, 2003
6664153 Method to fabricate a single gate with dual work-functions Dec. 16, 2003
6660577 Method for fabricating metal gates in deep sub-micron devices Dec. 9, 2003
6657268 Metal gate stack with etch stop layer having implanted metal species Dec. 2, 2003
6653691 Radio frequency (RF) power devices having faraday shield layers therein Nov. 25, 2003
6653698 Integration of dual workfunction metal gate CMOS devices Nov. 25, 2003
6649980 Semiconductor device with MOS transistors sharing electrode Nov. 18, 2003
6642132 Cmos of semiconductor device and method for manufacturing the same Nov. 4, 2003
6630383 Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer Oct. 7, 2003
6630720 Asymmetric semiconductor device having dual work function gate and method of fabrication Oct. 7, 2003
6621125 Buried channel device structure Sep. 16, 2003
6621123 Semiconductor device, and semiconductor integrated device Sep. 16, 2003
6617632 Semiconductor device and a method of manufacturing the same Sep. 9, 2003
6600212 Semiconductor device and method of fabricating the same Jul. 29, 2003
6586284 Silicon-on-insulator (SOI) substrate, method for fabricating SOI substrate and SOI MOSFET using the SOI substrate Jul. 1, 2003
6586808 Semiconductor device having multi-work function gate electrode and multi-segment gate dielectric Jul. 1, 2003
6586785 Aerosol silicon nanoparticles for use in semiconductor device fabrication Jul. 1, 2003
6580137 Damascene double gated transistors and related manufacturing methods Jun. 17, 2003
6573575 DRAM MOS field effect transistors with thresholds determined by differential gate doping Jun. 3, 2003
6563151 Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same May. 13, 2003
6555879 SOI device with metal source/drain and method of fabrication Apr. 29, 2003
6541829 Semiconductor device and method of manufacturing the same Apr. 1, 2003
6534837 Semiconductor device Mar. 18, 2003
6521943 Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture Feb. 18, 2003
6518106 Semiconductor device and a method therefor Feb. 11, 2003
6509609 Grooved channel schottky MOSFET Jan. 21, 2003
6492688 Dual work function CMOS device Dec. 10, 2002
6483151 Semiconductor device and method of manufacturing the same Nov. 19, 2002
6479358 Raised source/drain process by selective SiGe epitaxy Nov. 12, 2002
6465290 Method of manufacturing a semiconductor device using a polymer film pattern Oct. 15, 2002
6458695 Methods to form dual metal gates by incorporating metals and their conductive oxides Oct. 1, 2002
6437405 Silicon-on-insulator (SOI) substrate, method for fabricating SOI substrate and SOI MOSFET using the SOI substrate Aug. 20, 2002
6437360 Vacuum field transistor Aug. 20, 2002
6424016 SOI DRAM having P-doped polysilicon gate for a memory pass transistor Jul. 23, 2002
6376888 Semiconductor device and method of manufacturing the same Apr. 23, 2002
6373112 Polysilicon-germanium MOSFET gate electrodes Apr. 16, 2002

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