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Class Information
Number: 257/407
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With gate electrode of controlled workfunction material (e.g., low workfunction gate material)
Description: Subject matter wherein the device has a gate electrode selected to have a controlled amount of minimum energy needed to be applied thereto to liberate an electron from its Fermi-level and send it into free space.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
7109550 Semiconductor fabrication process with asymmetrical conductive spacers Sep. 19, 2006
7102203 Semiconductor device including field-effect transistor Sep. 5, 2006
7091569 Gate and CMOS structure and MOS structure Aug. 15, 2006
7060568 Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit Jun. 13, 2006
7057243 Hybrid semiconductor device having an n+ (p) doped n-type gate and method of producing the same Jun. 6, 2006
7045406 Method of forming an electrode with adjusted work function May. 16, 2006
7045844 Memory cell and method for forming the same May. 16, 2006
7030430 Transition metal alloys for use as a gate electrode and devices incorporating these alloys Apr. 18, 2006
7023064 Temperature stable metal nitride gate electrode Apr. 4, 2006
7009279 Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof Mar. 7, 2006
7005716 Dual metal gate process: metals and their silicides Feb. 28, 2006
6998686 Metal-gate electrode for CMOS transistor applications Feb. 14, 2006
6995434 Semiconductor device and method of fabricating the same Feb. 7, 2006
6992358 Semiconductor device and method for manufacturing the same Jan. 31, 2006
6992357 Semiconductor device and method of manufacturing the same Jan. 31, 2006
6974999 Semiconductor device and method of manufacturing the same Dec. 13, 2005
6967379 Semiconductor device including metal insulator semiconductor field effect transistor Nov. 22, 2005
6965123 Transistor with variable electron affinity gate and methods of fabrication and use Nov. 15, 2005
6964893 Semiconductor device and method of fabricating the same Nov. 15, 2005
6964891 Thin film transistor substrate and its manufacture Nov. 15, 2005
6936508 Metal gate MOS transistors and methods for making the same Aug. 30, 2005
6921935 Memory cell and method for forming the same Jul. 26, 2005
6921949 Semiconductor integrated circuit device Jul. 26, 2005
6914311 Semiconductor device having doped gate electrode Jul. 5, 2005
6911740 Semiconductor device having increased gaps between gates Jun. 28, 2005
6909154 Sacrificial annealing layer for a semiconductor device and a method of fabrication Jun. 21, 2005
6909186 High performance FET devices and methods therefor Jun. 21, 2005
6905922 Dual fully-silicided gate MOSFETs Jun. 14, 2005
6905976 Structure and method of forming a notched gate field effect transistor Jun. 14, 2005
6894356 SRAM system having very lightly doped SRAM load transistors for improving SRAM cell stability and method for making the same May. 17, 2005
6891234 Transistor with workfunction-induced charge layer May. 10, 2005
6891233 Methods to form dual metal gates by incorporating metals and their conductive oxides May. 10, 2005
6888205 Metal oxide semiconductor field-effect transistor having a gate oxide layer with portions of different thicknesses and associated methods May. 3, 2005
6888206 Power semiconductor device and method of manufacturing the same May. 3, 2005
6879009 Integrated circuit with MOSFETS having bi-layer metal gate electrodes Apr. 12, 2005
6878579 Semiconductor device and method of manufacturing the same Apr. 12, 2005
6873020 High/low work function metal alloys for integrated circuit electrodes Mar. 29, 2005
6870224 MOS transistor apparatus and method of manufacturing same Mar. 22, 2005
6861712 MOSFET threshold voltage tuning with metal gate stack control Mar. 1, 2005
6858908 Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide Feb. 22, 2005
6858906 Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers Feb. 22, 2005
6855989 Damascene finfet gate with selective metal interdiffusion Feb. 15, 2005
6853020 Double-gate semiconductor device Feb. 8, 2005
6835989 Methods to form dual metal gates by incorporating metals and their conductive oxides Dec. 28, 2004
6831336 Semiconductor integrated circuit Dec. 14, 2004
6821874 Method for depositing tungsten silicide film and method for preparing gate electrode/wiring Nov. 23, 2004
6798028 Field effect transistor with reduced gate delay and method of fabricating the same Sep. 28, 2004
6791106 Semiconductor device and method of manufacturing the same Sep. 14, 2004
6790731 Method for tuning a work function for MOSFET gate electrodes Sep. 14, 2004
6773978 Methods for improved metal gate fabrication Aug. 10, 2004

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