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Browse by Category: Main > Physics
Class Information
Number: 257/407
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With gate electrode of controlled workfunction material (e.g., low workfunction gate material)
Description: Subject matter wherein the device has a gate electrode selected to have a controlled amount of minimum energy needed to be applied thereto to liberate an electron from its Fermi-level and send it into free space.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
7432567 Metal gate CMOS with at least a single gate metal and dual gate dielectrics Oct. 7, 2008
7432566 Method and system for forming dual work function gate electrodes in a semiconductor device Oct. 7, 2008
7429776 Semiconductor device and method for manufacturing the same Sep. 30, 2008
7420254 Semiconductor device having a metal gate electrode Sep. 2, 2008
7410855 Semiconductor device Aug. 12, 2008
7408234 Semiconductor device and method for manufacturing the same Aug. 5, 2008
7405451 Semiconductor device including MIS transistors Jul. 29, 2008
7397090 Gate electrode architecture for improved work function tuning and method of manufacture Jul. 8, 2008
7391063 Display device Jun. 24, 2008
7391084 LDMOS transistor device, integrated circuit, and fabrication method thereof Jun. 24, 2008
7391085 Semiconductor device Jun. 24, 2008
7387956 Refractory metal-based electrodes for work function setting in semiconductor devices Jun. 17, 2008
7382021 Insulated gate field-effect transistor having III-VI source/drain layer(s) Jun. 3, 2008
7381999 Workfunction-adjusted thyristor-based memory device Jun. 3, 2008
7365015 Damascene replacement metal gate process with controlled gate profile and length using Si.sub.1-xGe.sub.x as sacrificial material Apr. 29, 2008
7355249 Silicon-on-insulator based radiation detection device and method Apr. 8, 2008
7335958 Tailoring gate work-function in image sensors Feb. 26, 2008
7324367 Memory cell and method for forming the same Jan. 29, 2008
7320931 Interfacial layer for use with high k dielectric materials Jan. 22, 2008
7321154 Refractory metal-based electrodes for work function setting in semiconductor devices Jan. 22, 2008
7304353 Formation of standard voltage threshold and low voltage threshold MOSFET devices Dec. 4, 2007
7285829 Semiconductor device having a laterally modulated gate workfunction and method of fabrication Oct. 23, 2007
7285833 Selective doping and thermal annealing method for forming a gate electrode pair with different work functions Oct. 23, 2007
7271457 Abrupt channel doping profile for fermi threshold field effect transistors Sep. 18, 2007
7268387 Semiconductor device and an electronic device Sep. 11, 2007
7256458 Doubly asymmetric double gate transistor structure Aug. 14, 2007
7253485 Semiconductor device and manufacturing method thereof Aug. 7, 2007
7242049 Memory device Jul. 10, 2007
7235837 Technique to control tunneling currents in DRAM capacitors, cells, and devices Jun. 26, 2007
7235847 Semiconductor device having a gate with a thin conductive layer Jun. 26, 2007
7202539 Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereof Apr. 10, 2007
7187044 Complementary metal gate electrode technology Mar. 6, 2007
7179702 Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same Feb. 20, 2007
7176513 Memory cell and method for forming the same Feb. 13, 2007
7176537 High performance CMOS with metal-gate and Schottky source/drain Feb. 13, 2007
7157751 Display device Jan. 2, 2007
7154153 Memory device Dec. 26, 2006
7151303 Fully-depleted (FD) (SOI) MOSFET access transistor Dec. 19, 2006
7148548 Semiconductor device with a high-k gate dielectric and a metal gate electrode Dec. 12, 2006
7145208 MOS transistor having a work-function-dominating layer Dec. 5, 2006
7141858 Dual work function CMOS gate technology based on metal interdiffusion Nov. 28, 2006
7135742 Insulated gate type semiconductor device and method for fabricating same Nov. 14, 2006
7132718 Fabrication method and structure of semiconductor non-volatile memory device Nov. 7, 2006
7129544 Vertical compound semiconductor field effect transistor structure Oct. 31, 2006
7125762 Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer Oct. 24, 2006
7122414 Method to fabricate dual metal CMOS devices Oct. 17, 2006
7122472 Method for forming self-aligned dual fully silicided gates in CMOS devices Oct. 17, 2006
7122870 Methods of forming a multilayer stack alloy for work function engineering Oct. 17, 2006
7119402 Field effect transistor and manufacturing method thereof Oct. 10, 2006
7109548 Operating a memory device Sep. 19, 2006

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