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Class Information
Number: 257/407
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With gate electrode of controlled workfunction material (e.g., low workfunction gate material)
Description: Subject matter wherein the device has a gate electrode selected to have a controlled amount of minimum energy needed to be applied thereto to liberate an electron from its Fermi-level and send it into free space.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439113 |
Forming dual metal complementary metal oxide semiconductor integrated circuits |
Oct. 21, 2008 |
| 7439140 |
Formation of standard voltage threshold and low voltage threshold MOSFET devices |
Oct. 21, 2008 |
| 7435652 |
Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET |
Oct. 14, 2008 |
| 7436034 |
Metal oxynitride as a pFET material |
Oct. 14, 2008 |
| 7432570 |
Semiconductor device and manufacturing method thereof |
Oct. 7, 2008 |
| 7432567 |
Metal gate CMOS with at least a single gate metal and dual gate dielectrics |
Oct. 7, 2008 |
| 7432566 |
Method and system for forming dual work function gate electrodes in a semiconductor device |
Oct. 7, 2008 |
| 7429776 |
Semiconductor device and method for manufacturing the same |
Sep. 30, 2008 |
| 7420254 |
Semiconductor device having a metal gate electrode |
Sep. 2, 2008 |
| 7410855 |
Semiconductor device |
Aug. 12, 2008 |
| 7408234 |
Semiconductor device and method for manufacturing the same |
Aug. 5, 2008 |
| 7405451 |
Semiconductor device including MIS transistors |
Jul. 29, 2008 |
| 7397090 |
Gate electrode architecture for improved work function tuning and method of manufacture |
Jul. 8, 2008 |
| 7391063 |
Display device |
Jun. 24, 2008 |
| 7391084 |
LDMOS transistor device, integrated circuit, and fabrication method thereof |
Jun. 24, 2008 |
| 7391085 |
Semiconductor device |
Jun. 24, 2008 |
| 7387956 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Jun. 17, 2008 |
| 7382021 |
Insulated gate field-effect transistor having III-VI source/drain layer(s) |
Jun. 3, 2008 |
| 7381999 |
Workfunction-adjusted thyristor-based memory device |
Jun. 3, 2008 |
| 7365015 |
Damascene replacement metal gate process with controlled gate profile and length using Si.sub.1-xGe.sub.x as sacrificial material |
Apr. 29, 2008 |
| 7355249 |
Silicon-on-insulator based radiation detection device and method |
Apr. 8, 2008 |
| 7335958 |
Tailoring gate work-function in image sensors |
Feb. 26, 2008 |
| 7324367 |
Memory cell and method for forming the same |
Jan. 29, 2008 |
| 7320931 |
Interfacial layer for use with high k dielectric materials |
Jan. 22, 2008 |
| 7321154 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Jan. 22, 2008 |
| 7304353 |
Formation of standard voltage threshold and low voltage threshold MOSFET devices |
Dec. 4, 2007 |
| 7285833 |
Selective doping and thermal annealing method for forming a gate electrode pair with different work functions |
Oct. 23, 2007 |
| 7285829 |
Semiconductor device having a laterally modulated gate workfunction and method of fabrication |
Oct. 23, 2007 |
| 7271457 |
Abrupt channel doping profile for fermi threshold field effect transistors |
Sep. 18, 2007 |
| 7268387 |
Semiconductor device and an electronic device |
Sep. 11, 2007 |
| 7256458 |
Doubly asymmetric double gate transistor structure |
Aug. 14, 2007 |
| 7253485 |
Semiconductor device and manufacturing method thereof |
Aug. 7, 2007 |
| 7242049 |
Memory device |
Jul. 10, 2007 |
| 7235837 |
Technique to control tunneling currents in DRAM capacitors, cells, and devices |
Jun. 26, 2007 |
| 7235847 |
Semiconductor device having a gate with a thin conductive layer |
Jun. 26, 2007 |
| 7202539 |
Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereof |
Apr. 10, 2007 |
| 7187044 |
Complementary metal gate electrode technology |
Mar. 6, 2007 |
| 7179702 |
Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same |
Feb. 20, 2007 |
| 7176537 |
High performance CMOS with metal-gate and Schottky source/drain |
Feb. 13, 2007 |
| 7176513 |
Memory cell and method for forming the same |
Feb. 13, 2007 |
| 7157751 |
Display device |
Jan. 2, 2007 |
| 7154153 |
Memory device |
Dec. 26, 2006 |
| 7151303 |
Fully-depleted (FD) (SOI) MOSFET access transistor |
Dec. 19, 2006 |
| 7148548 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode |
Dec. 12, 2006 |
| 7145208 |
MOS transistor having a work-function-dominating layer |
Dec. 5, 2006 |
| 7141858 |
Dual work function CMOS gate technology based on metal interdiffusion |
Nov. 28, 2006 |
| 7135742 |
Insulated gate type semiconductor device and method for fabricating same |
Nov. 14, 2006 |
| 7132718 |
Fabrication method and structure of semiconductor non-volatile memory device |
Nov. 7, 2006 |
| 7129544 |
Vertical compound semiconductor field effect transistor structure |
Oct. 31, 2006 |
| 7125762 |
Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer |
Oct. 24, 2006 |
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