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Class Information
Number: 257/407
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With gate electrode of controlled workfunction material (e.g., low workfunction gate material)
Description: Subject matter wherein the device has a gate electrode selected to have a controlled amount of minimum energy needed to be applied thereto to liberate an electron from its Fermi-level and send it into free space.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8703594 Semiconductor device having a treated gate structure and fabrication method thereof Apr. 22, 2014
8686514 Multiple threshold voltages in field effect transistor devices Apr. 1, 2014
8680629 Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices Mar. 25, 2014
8669624 Semiconductor device and manufacturing method thereof Mar. 11, 2014
8658483 Method of fabricating an integrated circuit device having backside bevel protection Feb. 25, 2014
8658489 Method for dual work function metal gate CMOS with selective capping Feb. 25, 2014
8653605 Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum Feb. 18, 2014
8653610 High performance non-planar semiconductor devices with metal filled inter-fin gaps Feb. 18, 2014
8643113 Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer Feb. 4, 2014
8643106 Semiconductor device Feb. 4, 2014
8642468 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors Feb. 4, 2014
8643121 Semiconductor device and method of manufacturing a semiconductor device Feb. 4, 2014
8629014 Replacement metal gate structures for effective work function control Jan. 14, 2014
8592922 Transistor device and a method of manufacturing the same Nov. 26, 2013
8581350 Field effect transistor and semiconductor device, and method for manufacturing same Nov. 12, 2013
8575012 Semiconductor device production method and semiconductor device Nov. 5, 2013
8575023 Contact formation method, semiconductor device manufacturing method, and semiconductor device Nov. 5, 2013
8569128 Semiconductor structure and method of fabrication thereof with mixed metal types Oct. 29, 2013
8569135 Replacement gate electrode with planar work function material layers Oct. 29, 2013
8569844 Metal gate CMOS with at least a single gate metal and dual gate dielectrics Oct. 29, 2013
8564072 Semiconductor device having a blocking structure and method of manufacturing the same Oct. 22, 2013
8564044 Non-volatile memory and logic circuit process integration Oct. 22, 2013
8558325 Ruthenium for a dielectric containing a lanthanide Oct. 15, 2013
8546885 Metal gate electrode of a field effect transistor Oct. 1, 2013
8546892 Semiconductor device and method for manufacturing semiconductor device Oct. 1, 2013
8536654 Structure and method for dual work function metal gate CMOS with selective capping Sep. 17, 2013
8530976 Memory element transistors with reversed-workfunction gate conductors Sep. 10, 2013
8525270 Structures and methods to stop contact metal from extruding into replacement gates Sep. 3, 2013
8518766 Method of forming switching device having a molybdenum oxynitride metal gate Aug. 27, 2013
8513085 Structure and method to improve threshold voltage of MOSFETs including a high k dielectric Aug. 20, 2013
8513740 Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the same Aug. 20, 2013
8513773 Capacitor and semiconductor device including dielectric and N-type semiconductor Aug. 20, 2013
8508001 Semiconductor device with work function adjusting layer having varied thickness in a gate width direction and methods of making same Aug. 13, 2013
8502325 Metal high-K transistor having silicon sidewalls for reduced parasitic capacitance Aug. 6, 2013
8487382 Device scheme of HKMG gate-last process Jul. 16, 2013
8476128 Semiconductor device having insulated gate field effect transistors and method of fabricating the same Jul. 2, 2013
8461049 Method for fabricating semiconductor device Jun. 11, 2013
8431453 Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure Apr. 30, 2013
8410543 Semiconductor storage device and manufacturing method thereof Apr. 2, 2013
8410556 Semiconductor device Apr. 2, 2013
8384166 Method for manufacturing semiconductor device and semiconductor device Feb. 26, 2013
8384165 Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow Feb. 26, 2013
8383502 Integrated high-K/metal gate in CMOS process flow Feb. 26, 2013
8378428 Metal gate structure of a semiconductor device Feb. 19, 2013
8373239 Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric Feb. 12, 2013
8367502 Method of manufacturing dual gate semiconductor device Feb. 5, 2013
8368149 Semidonductor device having stressed metal gate and methods of manufacturing same Feb. 5, 2013
8361851 Method for manufacturing an NMOS with improved carrier mobility Jan. 29, 2013
8338242 Backside bevel protection Dec. 25, 2012
8334184 Polish to remove topography in sacrificial gate layer prior to gate patterning Dec. 18, 2012

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