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Class Information
Number: 257/405
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With gate insulator containing specified permanent charge
Description: Subject matter wherein the device has a gate insulator with a specified permanent electrostatic charge therein.










Sub-classes under this class:

Class Number Class Name Patents
257/406 Plural gate insulator layers 187


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8507971 Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins Aug. 13, 2013
8350341 Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG) Jan. 8, 2013
8217440 Semiconductor device and method of fabricating the same Jul. 10, 2012
8072024 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 6, 2011
8039873 Semiconductor device Oct. 18, 2011
7989877 Semiconductor devices including a dielectric layer Aug. 2, 2011
7989362 Hafnium lanthanide oxynitride films Aug. 2, 2011
7968397 Semiconductor device and method of manufacturing the same Jun. 28, 2011
7893508 Semiconductor device and manufacturing method thereof Feb. 22, 2011
7876610 Memory cell array with specific placement of field stoppers Jan. 25, 2011
7851833 Semiconductor device Dec. 14, 2010
7834408 Semiconductor device and method for manufacturing the same Nov. 16, 2010
7759746 Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements Jul. 20, 2010
7687869 Semiconductor device and method of manufacturing the same Mar. 30, 2010
7646072 Semiconductor device and method for manufacturing the same Jan. 12, 2010
7619926 NAND flash memory with fixed charge Nov. 17, 2009
7573094 Random number generating element Aug. 11, 2009
7563730 Hafnium lanthanide oxynitride films Jul. 21, 2009
7498643 Semiconductor device and method for manufacturing the same Mar. 3, 2009
7485919 Non-volatile memory Feb. 3, 2009
7459757 Transistor structures Dec. 2, 2008
7442999 Semiconductor substrate, substrate for semiconductor crystal growth, semiconductor device, optical semiconductor device, and manufacturing method thereof Oct. 28, 2008
7411237 Lanthanum hafnium oxide dielectrics Aug. 12, 2008
7355226 Power semiconductor and method of fabrication Apr. 8, 2008
7312491 Charge trapping semiconductor memory element with improved trapping dielectric Dec. 25, 2007
7304340 Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card Dec. 4, 2007
7301219 Electrically erasable programmable read only memory (EEPROM) cell and method for making the same Nov. 27, 2007
7208802 Insulating film and electronic device Apr. 24, 2007
7187043 Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body Mar. 6, 2007
7164177 Multi-level memory cell Jan. 16, 2007
7161203 Gated field effect device comprising gate dielectric having different K regions Jan. 9, 2007
7141857 Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof Nov. 28, 2006
7129544 Vertical compound semiconductor field effect transistor structure Oct. 31, 2006
7119395 Memory cell with nanocrystals or nanodots Oct. 10, 2006
7119402 Field effect transistor and manufacturing method thereof Oct. 10, 2006
7109131 System and method for hydrogen-rich selective oxidation Sep. 19, 2006
7094707 Method of forming nitrided oxide in a hot wall single wafer furnace Aug. 22, 2006
7087969 Complementary field effect transistor and its manufacturing method Aug. 8, 2006
7002224 Transistor with doped gate dielectric Feb. 21, 2006
6888204 Semiconductor devices, and methods for same May. 3, 2005
6882031 Ammonia gas passivation on nitride encapsulated devices Apr. 19, 2005
6870180 Organic polarizable gate transistor apparatus and method Mar. 22, 2005
6852610 Semiconductor device and method for manufacturing the same Feb. 8, 2005
6831336 Semiconductor integrated circuit Dec. 14, 2004
6821833 Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured thereby Nov. 23, 2004
6821868 Method of forming nitrogen enriched gate dielectric with low effective oxide thickness Nov. 23, 2004
6800909 Semiconductor device and method of manufacturing the same Oct. 5, 2004
6757208 Dual-bit nitride read only memory cell with parasitic amplifier and methods of fabricating and reading the same Jun. 29, 2004
6740941 Semiconductor device including a gate insulating film made of high-dielectric-constant material May. 25, 2004

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