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Class Information
Number: 257/405
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With gate insulator containing specified permanent charge
Description: Subject matter wherein the device has a gate insulator with a specified permanent electrostatic charge therein.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619926 |
NAND flash memory with fixed charge |
Nov. 17, 2009 |
| 7573094 |
Random number generating element |
Aug. 11, 2009 |
| 7563730 |
Hafnium lanthanide oxynitride films |
Jul. 21, 2009 |
| 7498643 |
Semiconductor device and method for manufacturing the same |
Mar. 3, 2009 |
| 7485919 |
Non-volatile memory |
Feb. 3, 2009 |
| 7459757 |
Transistor structures |
Dec. 2, 2008 |
| 7442999 |
Semiconductor substrate, substrate for semiconductor crystal growth, semiconductor device, optical semiconductor device, and manufacturing method thereof |
Oct. 28, 2008 |
| 7411237 |
Lanthanum hafnium oxide dielectrics |
Aug. 12, 2008 |
| 7355226 |
Power semiconductor and method of fabrication |
Apr. 8, 2008 |
| 7312491 |
Charge trapping semiconductor memory element with improved trapping dielectric |
Dec. 25, 2007 |
| 7304340 |
Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card |
Dec. 4, 2007 |
| 7301219 |
Electrically erasable programmable read only memory (EEPROM) cell and method for making the same |
Nov. 27, 2007 |
| 7208802 |
Insulating film and electronic device |
Apr. 24, 2007 |
| 7187043 |
Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body |
Mar. 6, 2007 |
| 7164177 |
Multi-level memory cell |
Jan. 16, 2007 |
| 7161203 |
Gated field effect device comprising gate dielectric having different K regions |
Jan. 9, 2007 |
| 7141857 |
Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof |
Nov. 28, 2006 |
| 7129544 |
Vertical compound semiconductor field effect transistor structure |
Oct. 31, 2006 |
| 7119395 |
Memory cell with nanocrystals or nanodots |
Oct. 10, 2006 |
| 7119402 |
Field effect transistor and manufacturing method thereof |
Oct. 10, 2006 |
| 7109131 |
System and method for hydrogen-rich selective oxidation |
Sep. 19, 2006 |
| 7094707 |
Method of forming nitrided oxide in a hot wall single wafer furnace |
Aug. 22, 2006 |
| 7087969 |
Complementary field effect transistor and its manufacturing method |
Aug. 8, 2006 |
| 7002224 |
Transistor with doped gate dielectric |
Feb. 21, 2006 |
| 6888204 |
Semiconductor devices, and methods for same |
May. 3, 2005 |
| 6882031 |
Ammonia gas passivation on nitride encapsulated devices |
Apr. 19, 2005 |
| 6870180 |
Organic polarizable gate transistor apparatus and method |
Mar. 22, 2005 |
| 6852610 |
Semiconductor device and method for manufacturing the same |
Feb. 8, 2005 |
| 6831336 |
Semiconductor integrated circuit |
Dec. 14, 2004 |
| 6821833 |
Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured thereby |
Nov. 23, 2004 |
| 6821868 |
Method of forming nitrogen enriched gate dielectric with low effective oxide thickness |
Nov. 23, 2004 |
| 6800909 |
Semiconductor device and method of manufacturing the same |
Oct. 5, 2004 |
| 6757208 |
Dual-bit nitride read only memory cell with parasitic amplifier and methods of fabricating and reading the same |
Jun. 29, 2004 |
| 6740941 |
Semiconductor device including a gate insulating film made of high-dielectric-constant material |
May. 25, 2004 |
| 6724056 |
Field-effect transistors with high-sensitivity gates |
Apr. 20, 2004 |
| 6670672 |
Structure of discrete NROM cell |
Dec. 30, 2003 |
| 6576964 |
Dielectric layer for a semiconductor device having less current leakage and increased capacitance |
Jun. 10, 2003 |
| 6563182 |
Semiconductor device and manufacturing method thereof |
May. 13, 2003 |
| 6545314 |
Memory using insulator traps |
Apr. 8, 2003 |
| 6521958 |
MOSFET technology for programmable address decode and correction |
Feb. 18, 2003 |
| 6518635 |
Semiconductor device and manufacturing method thereof |
Feb. 11, 2003 |
| 6498374 |
MOS semiconductor device having gate insulating film containing nitrogen |
Dec. 24, 2002 |
| 6479862 |
Charge trapping device and method for implementing a transistor having a negative differential resistance mode |
Nov. 12, 2002 |
| 6455883 |
Nonvolatile semiconductor memory |
Sep. 24, 2002 |
| 6448630 |
Semiconductor device comprising a polish preventing pattern |
Sep. 10, 2002 |
| 6232643 |
Memory using insulator traps |
May. 15, 2001 |
| 6218700 |
Remanent memory device |
Apr. 17, 2001 |
| 6117749 |
Modification of interfacial fields between dielectrics and semiconductors |
Sep. 12, 2000 |
| 6104072 |
Analogue MISFET with threshold voltage adjuster |
Aug. 15, 2000 |
| 6078089 |
Semiconductor device having cobalt niobate-metal silicide electrode structure and process of fabrication thereof |
Jun. 20, 2000 |
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