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Class Information
Number: 257/404
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With channel conductivity dopant same type as that of source and drain > Non-uniform channel doping
Description: Subject matter wherein the dopant concentration varies along at least one dimension of the channel.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7355226 |
Power semiconductor and method of fabrication |
Apr. 8, 2008 |
| 7301197 |
Non-volatile nanocrystal memory transistors using low voltage impact ionization |
Nov. 27, 2007 |
| 7301208 |
Semiconductor device and method for fabricating the same |
Nov. 27, 2007 |
| 7274048 |
Substrate based ESD network protection for a flip chip |
Sep. 25, 2007 |
| 7271457 |
Abrupt channel doping profile for fermi threshold field effect transistors |
Sep. 18, 2007 |
| 7247532 |
High voltage transistor and method for fabricating the same |
Jul. 24, 2007 |
| 7224023 |
Semiconductor device and method of manufacturing thereof |
May. 29, 2007 |
| 7129544 |
Vertical compound semiconductor field effect transistor structure |
Oct. 31, 2006 |
| 7061058 |
Forming a retrograde well in a transistor to enhance performance of the transistor |
Jun. 13, 2006 |
| 7053450 |
Semiconductor device and method for fabricating the same |
May. 30, 2006 |
| 7045860 |
Semiconductor device and manufacturing method thereof |
May. 16, 2006 |
| 7023060 |
Methods for programming read-only memory cells and associated memories |
Apr. 4, 2006 |
| 7019379 |
Semiconductor device comprising voltage regulator element |
Mar. 28, 2006 |
| 7015546 |
Deterministically doped field-effect devices and methods of making same |
Mar. 21, 2006 |
| 7009248 |
Semiconductor device with asymmetric pocket implants |
Mar. 7, 2006 |
| 6919600 |
Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact |
Jul. 19, 2005 |
| 6873008 |
Asymmetrical devices for short gate length performance with disposable sidewall |
Mar. 29, 2005 |
| 6873053 |
Semiconductor device with smoothed pad portion |
Mar. 29, 2005 |
| 6867472 |
Reduced hot carrier induced parasitic sidewall device activation in isolated buried channel devices by conductive buried channel depth optimization |
Mar. 15, 2005 |
| 6864507 |
MISFET |
Mar. 8, 2005 |
| 6828605 |
Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component |
Dec. 7, 2004 |
| 6815766 |
Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
Nov. 9, 2004 |
| 6800909 |
Semiconductor device and method of manufacturing the same |
Oct. 5, 2004 |
| 6787850 |
Dynamic threshold voltage MOS transistor fitted with a current limiter |
Sep. 7, 2004 |
| 6784059 |
Semiconductor device and method of manufacturing thereof |
Aug. 31, 2004 |
| 6740942 |
Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact |
May. 25, 2004 |
| 6737702 |
Zero power memory cell with reduced threshold voltage |
May. 18, 2004 |
| 6737715 |
Field-effect transistor and corresponding manufacturing method |
May. 18, 2004 |
| 6703671 |
Insulated gate semiconductor device and method of manufacturing the same |
Mar. 9, 2004 |
| 6690075 |
Semiconductor device with channel having plural impurity regions |
Feb. 10, 2004 |
| 6686633 |
Semiconductor device, memory cell, and processes for forming them |
Feb. 3, 2004 |
| 6670683 |
Composite transistor having a slew-rate control |
Dec. 30, 2003 |
| 6653687 |
Insulated gate semiconductor device |
Nov. 25, 2003 |
| 6653686 |
Structure and method of controlling short-channel effect of very short channel MOSFET |
Nov. 25, 2003 |
| 6621116 |
Enhanced EPROM structures with accentuated hot electron generation regions |
Sep. 16, 2003 |
| 6590241 |
MOS transistors with improved gate dielectrics |
Jul. 8, 2003 |
| 6525361 |
Process and integrated circuit for a multilevel memory cell with an asymmetric drain |
Feb. 25, 2003 |
| 6512272 |
Increased gate to body coupling and application to dram and dynamic circuits |
Jan. 28, 2003 |
| 6507058 |
Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making same |
Jan. 14, 2003 |
| 6498376 |
Semiconductor device and manufacturing method thereof |
Dec. 24, 2002 |
| 6498359 |
Field-effect transistor based on embedded cluster structures and process for its production |
Dec. 24, 2002 |
| 6495891 |
Transistor having impurity concentration distribution capable of improving short channel effect |
Dec. 17, 2002 |
| 6466489 |
Use of source/drain asymmetry MOSFET devices in dynamic and analog circuits |
Oct. 15, 2002 |
| 6448620 |
Semiconductor device and process for producing the same |
Sep. 10, 2002 |
| 6420763 |
Semiconductor device having a retrograde well structure and method of manufacturing thereof |
Jul. 16, 2002 |
| 6417550 |
High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage |
Jul. 9, 2002 |
| 6384457 |
Asymmetric MOSFET devices |
May. 7, 2002 |
| 6355963 |
MOS type semiconductor device having an impurity diffusion layer |
Mar. 12, 2002 |
| 6353244 |
Semiconductor device and manufacturing method thereof |
Mar. 5, 2002 |
| 6326656 |
Lateral high-voltage transistor |
Dec. 4, 2001 |
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