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Class Information
Number: 257/403
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode) > With channel conductivity dopant same type as that of source and drain
Description: Subject matter wherein the device has a channel which is doped with impurity dopant to be the same conductivity type (n or p) as the source and drain.










Sub-classes under this class:

Class Number Class Name Patents
257/404 Non-uniform channel doping 169


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8637939 Semiconductor device and method for fabricating the same Jan. 28, 2014
8633547 Structure for spanning gap in body-bias voltage routing structure Jan. 21, 2014
8569128 Semiconductor structure and method of fabrication thereof with mixed metal types Oct. 29, 2013
8445968 Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same May. 21, 2013
8299546 Semiconductor devices with vertical extensions for lateral scaling Oct. 30, 2012
8093664 Non-volatile semiconductor memory device and depletion-type MOS transistor Jan. 10, 2012
8093630 Semiconductor device and lateral diffused metal-oxide-semiconductor transistor Jan. 10, 2012
8068157 Image sensor with wide operating range Nov. 29, 2011
7973361 High breakdown voltage semiconductor device and fabrication method of the same Jul. 5, 2011
7947555 Method of making silicon carbide semiconductor device May. 24, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7687834 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 30, 2010
7655990 Voltage-clipping device with high breakdown voltage Feb. 2, 2010
7619288 Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate Nov. 17, 2009
7453281 Integrated circuit with anti-counterfeiting measures Nov. 18, 2008
7442971 Self-biasing transistor structure and an SRAM cell having less than six transistors Oct. 28, 2008
7432565 III-V compound semiconductor heterostructure MOSFET device Oct. 7, 2008
7417277 Semiconductor integrated circuit and method of manufacturing the same Aug. 26, 2008
7388260 Structure for spanning gap in body-bias voltage routing structure Jun. 17, 2008
7385263 Low resistance integrated MOS structure Jun. 10, 2008
7361947 Photoelectric conversion element and display device including the same Apr. 22, 2008
7326977 Low noise field effect transistor Feb. 5, 2008
7288817 Reverse metal process for creating a metal silicide transistor gate structure Oct. 30, 2007
7282768 MOS field-effect transistor Oct. 16, 2007
7274076 Threshold voltage adjustment for long channel transistors Sep. 25, 2007
7274056 Semiconductor constructions Sep. 25, 2007
7271457 Abrupt channel doping profile for fermi threshold field effect transistors Sep. 18, 2007
7227227 Reduced leakage semiconductor device Jun. 5, 2007
7176530 Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor Feb. 13, 2007
7129544 Vertical compound semiconductor field effect transistor structure Oct. 31, 2006
7098512 Layout patterns for deep well region to facilitate routing body-bias voltage Aug. 29, 2006
7081646 Semiconductor device and method of fabricating same Jul. 25, 2006
7071518 Schottky device Jul. 4, 2006
7049656 Field-effect-controllable semiconductor configuration with a laterally extending channel zone May. 23, 2006
7023060 Methods for programming read-only memory cells and associated memories Apr. 4, 2006
7019379 Semiconductor device comprising voltage regulator element Mar. 28, 2006
7015546 Deterministically doped field-effect devices and methods of making same Mar. 21, 2006
6977408 High-performance non-volatile memory device and fabrication process Dec. 20, 2005
6972465 CMOS process compatible, tunable negative differential resistance (NDR) device and method of operating same Dec. 6, 2005
6969894 Variable threshold semiconductor device and method of operating same Nov. 29, 2005
6940705 Capacitor with enhanced performance and method of manufacture Sep. 6, 2005
6936898 Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions Aug. 30, 2005
6933564 Semiconductor integrated circuit device and method of manufacturing the same Aug. 23, 2005
6897536 ESD protection circuit May. 24, 2005
6873053 Semiconductor device with smoothed pad portion Mar. 29, 2005
6873050 Intermediate construction having an edge defined feature Mar. 29, 2005
6864507 MISFET Mar. 8, 2005
6841836 Integrated device with Schottky diode and MOS transistor and related manufacturing process Jan. 11, 2005
6831336 Semiconductor integrated circuit Dec. 14, 2004
6787850 Dynamic threshold voltage MOS transistor fitted with a current limiter Sep. 7, 2004

1 2 3 4










 
 
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