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Class Information
Number: 257/402
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode)
Description: Subject matter wherein the device includes means for permanently adjusting the threshold voltage at which the device conducts (e.g., depletion mode IGFETs).

Sub-classes under this class:

Class Number Class Name Patents
257/403 With channel conductivity dopant same type as that of source and drain 170
257/407 With gate electrode of controlled workfunction material (e.g., low workfunction gate material) 356
257/405 With gate insulator containing specified permanent charge 96

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
4980732 Semiconductor device having an improved thin film transistor Dec. 25, 1990
4963501 Method of fabricating semiconductor devices with sub-micron linewidths Oct. 16, 1990
4953928 MOS device for long-term learning Sep. 4, 1990
4941027 High voltage MOS structure Jul. 10, 1990
4924119 Electrically programmable erasable inverter device with deprogramming limitation May. 8, 1990
4891533 MOS-cascoded bipolar current sources in non-epitaxial structure Jan. 2, 1990
4872043 Charge coupled device with reduced surface state at semiconductor-insulator interface Oct. 3, 1989
4857976 Hydrogen-stabilized semiconductor devices Aug. 15, 1989
4746960 Vertical depletion-mode j-MOSFET May. 24, 1988
4737471 Method for fabricating an insulated-gate FET having a narrow channel width Apr. 12, 1988
4714519 Method for fabricating MOS transistors having gates with different work functions Dec. 22, 1987
4665423 MIS variable resistor May. 12, 1987
4649629 Method of late programming a read only memory Mar. 17, 1987
4600933 Semiconductor integrated circuit structure with selectively modified insulation layer Jul. 15, 1986
4598305 Depletion mode thin film semiconductor photodetectors Jul. 1, 1986
4549336 Method of making MOS read only memory by specified double implantation Oct. 29, 1985
4509070 Metal-insulator-semiconductor transistor device Apr. 2, 1985
4508613 Miniaturized potassium ion sensor Apr. 2, 1985
4492973 MOS Dynamic memory cells and method of fabricating the same Jan. 8, 1985
4459325 Semiconductor device and method for manufacturing the same Jul. 10, 1984
4447746 Digital photodetectors May. 8, 1984
4404579 Semiconductor device having reduced capacitance and method of fabrication thereof Sep. 13, 1983
4402761 Method of making self-aligned gate MOS device having small channel lengths Sep. 6, 1983
4392893 Method for controlling characteristics of a semiconductor integrated by circuit X-ray bombardment Jul. 12, 1983
4317275 Method for making a depletion controlled switch Mar. 2, 1982
4315781 Method of controlling MOSFET threshold voltage with self-aligned channel stop Feb. 16, 1982
4295209 Programming an IGFET read-only-memory Oct. 13, 1981
4282539 Field effect transistor with decreased substrate control of the channel width Aug. 4, 1981
4274105 MOSFET Substrate sensitivity control Jun. 16, 1981
4266985 Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate May. 12, 1981
4229755 Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements Oct. 21, 1980
4218267 Microelectronic fabrication method minimizing threshold voltage variation Aug. 19, 1980
4212683 Method for making narrow channel FET Jul. 15, 1980
4145233 Method for making narrow channel FET by masking and ion-implantation Mar. 20, 1979
4131907 Short-channel V-groove complementary MOS device Dec. 26, 1978
4118642 Higher density insulated gate field effect circuit Oct. 3, 1978
4115796 Complementary-MOS integrated semiconductor device Sep. 19, 1978
RE29660 Process and product for making a single supply N-channel silicon gate device Jun. 6, 1978
4041518 MIS semiconductor device and method of manufacturing the same Aug. 9, 1977
3946424 High frequency field-effect transistors and method of making same Mar. 23, 1976

1 2 3 4 5 6 7

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