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Class Information
Number: 257/402
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode)
Description: Subject matter wherein the device includes means for permanently adjusting the threshold voltage at which the device conducts (e.g., depletion mode IGFETs).










Sub-classes under this class:

Class Number Class Name Patents
257/403 With channel conductivity dopant same type as that of source and drain 170
257/407 With gate electrode of controlled workfunction material (e.g., low workfunction gate material) 356
257/405 With gate insulator containing specified permanent charge 96


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
5581107 Nonvolatile semiconductor memory that eases the dielectric strength requirements Dec. 3, 1996
5578857 Double poly high density buried bit line mask ROM Nov. 26, 1996
5572056 High density ROM Nov. 5, 1996
5559368 Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation Sep. 24, 1996
5559351 Semiconductor element having Cr in silicon dioxide Sep. 24, 1996
5548148 MOS channel device with counterdoping of ion implant for reduced substrate sensitivity Aug. 20, 1996
5548153 Thin film transistor with means to prevent threshold variations Aug. 20, 1996
5548143 Metal oxide semiconductor transistor and a method for manufacturing the same Aug. 20, 1996
5539234 Bottom gate mask ROM device Jul. 23, 1996
5536977 Bidirectional current blocking MOSFET for battery disconnect switching Jul. 16, 1996
5534723 Semiconductor integrated circuit device having output and internal circuit MISFETS Jul. 9, 1996
5510630 Non-volatile random access memory cell constructed of silicon carbide Apr. 23, 1996
5508541 Random access memory device with trench-type one-transistor memory cell structure Apr. 16, 1996
5502322 Transistor having a nonuniform doping channel Mar. 26, 1996
5498896 High threshold metal oxide silicon read-only-memory transistors Mar. 12, 1996
5489795 Semiconductor integrated circuit device having double well structure Feb. 6, 1996
5465000 Threshold adjustment in vertical DMOS devices Nov. 7, 1995
5453637 Read-only memory cell configuration with steep trenches Sep. 26, 1995
5451533 Bidirectional blocking lateral MOSFET with improved on-resistance Sep. 19, 1995
5448096 Semiconductor device with reduced stress applied to gate electrode Sep. 5, 1995
5448093 Micro MIS type FET and manufacturing process therefor Sep. 5, 1995
5436484 Semiconductor integrated circuit device having input protective elements and internal circuits Jul. 25, 1995
5436489 Field effect transistor Jul. 25, 1995
5436483 Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit Jul. 25, 1995
5436949 Charge transfer apparatus Jul. 25, 1995
5430316 VDMOS transistor with improved breakdown characteristics Jul. 4, 1995
5422844 Memory array with field oxide islands eliminated and method Jun. 6, 1995
5422510 MOS transistor with non-uniform channel dopant profile Jun. 6, 1995
5420451 Bidirectional blocking lateral MOSFET with improved on-resistance May. 30, 1995
5418392 LDD type MOS transistor May. 23, 1995
5401991 Optically eraseable nonvolatile semiconductor memory Mar. 28, 1995
5394356 Process for forming an FET read only memory device Feb. 28, 1995
5362981 Integrated semiconductor device having a buried semiconductor layer and fabrication method thereof Nov. 8, 1994
5350940 Enhanced mobility metal oxide semiconductor devices Sep. 27, 1994
5341015 Semiconductor device with reduced stress on gate electrode Aug. 23, 1994
5334871 Field effect transistor signal switching device Aug. 2, 1994
5317534 A mask read only memory device May. 31, 1994
5300804 Mask ROM device having highly integrated memory cell structure Apr. 5, 1994
5260593 Semiconductor floating gate device having improved channel-floating gate interaction Nov. 9, 1993
5245207 Integrated circuit Sep. 14, 1993
5231299 Structure and fabrication method for EEPROM memory cell with selective channel implants Jul. 27, 1993
5218221 Semiconductor device and manufacturing method thereof Jun. 8, 1993
5210437 MOS device having a well layer for controlling threshold voltage May. 11, 1993
5198687 Base resistance controlled thyristor with single-polarity turn-on and turn-off control Mar. 30, 1993
5196908 Micro MIS type FET and manufacturing process therefor Mar. 23, 1993
5175599 MOS semiconductor device Dec. 29, 1992
5164805 Near-intrinsic thin-film SOI FETS Nov. 17, 1992
5156990 Floating-gate memory cell with tailored doping profile Oct. 20, 1992
5068696 Programmable interconnect or cell using silicided MOS transistors Nov. 26, 1991
4984042 MOS transistors using selective polysilicon deposition Jan. 8, 1991

1 2 3 4 5 6 7










 
 
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