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Class Information
Number: 257/402
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode)
Description: Subject matter wherein the device includes means for permanently adjusting the threshold voltage at which the device conducts (e.g., depletion mode IGFETs).










Sub-classes under this class:

Class Number Class Name Patents
257/403 With channel conductivity dopant same type as that of source and drain 170
257/407 With gate electrode of controlled workfunction material (e.g., low workfunction gate material) 356
257/405 With gate insulator containing specified permanent charge 96


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6222224 Erasable and programmable nonvolatile semiconductor memory, semiconductor integrated circuit device having the semiconductor memory and method of manufacturing the semiconductor memory Apr. 24, 2001
6218713 Logical circuit, flip-flop circuit and storage circuit with multivalued logic Apr. 17, 2001
6218714 Insulated gate semiconductor device and method of manufacturing the same Apr. 17, 2001
6208000 Semiconductor element having charge accumulating layer under gate electrode and using single electron phenomenon Mar. 27, 2001
6194766 Integrated circuit having low voltage and high voltage devices on a common semiconductor substrate Feb. 27, 2001
6191458 Silicon carbide integrated circuits Feb. 20, 2001
6184558 Comparator having reduced offset voltage Feb. 6, 2001
6163044 Method and circuit for lowering standby current in an integrated circuit Dec. 19, 2000
6144078 Methods for programming read-only memory cells and associated memories Nov. 7, 2000
6121665 Methods of forming field effect transistors and field effect transistor circuitry Sep. 19, 2000
6111283 Triple well structure Aug. 29, 2000
6107664 Self-locking static micro-circuit breaker Aug. 22, 2000
6100147 Method for manufacturing a high performance transistor with self-aligned dopant profile Aug. 8, 2000
6100565 Semiconductor integrated circuit device with operation in partial depletion type mode and perfect depletion type mode Aug. 8, 2000
6097247 Low threshold voltage diode-connected FET Aug. 1, 2000
6096586 MOS device with self-compensating V.sub.aT -implants Aug. 1, 2000
6091116 CMOS device and method for manufacturing the same Jul. 18, 2000
5986314 Depletion mode MOS capacitor with patterned V.sub.t implants Nov. 16, 1999
5956582 Current limiting circuit with continuous metallization Sep. 21, 1999
5952699 Insulated gate semiconductor device and method of manufacturing the same Sep. 14, 1999
5936291 Thin film transistor and method for fabricating the same Aug. 10, 1999
5929495 Semiconductor processing method of forming a static random access memory cell and static random access memory cell Jul. 27, 1999
5912483 Output circuit provided with source follower circuit having depletion type MOS transistor Jun. 15, 1999
5905292 Semiconductor device in which an increase in threshold voltage, resulting from back-gate bias effect is mitigated, and method of manufacturing the same May. 18, 1999
5859461 Method and apparatus for interfacing integrated circuits having different supply voltages Jan. 12, 1999
5847432 Semiconductor device and production method therefor Dec. 8, 1998
5831318 Radhard mosfet with thick gate oxide and deep channel region Nov. 3, 1998
5811871 Semiconductor device comprising a bipolar transistor Sep. 22, 1998
5786619 Depletion mode power MOSFET with refractory gate and method of making same Jul. 28, 1998
5780904 Semiconductor integrated circuit device for obtaining extremely small constant current and timer circuit using constant current circuit Jul. 14, 1998
5767556 Field effect transistor Jun. 16, 1998
5753958 Back-biasing in asymmetric MOS devices May. 19, 1998
5751025 High voltage current limiter and method for making May. 12, 1998
5751046 Semiconductor device with V.sub.T implant May. 12, 1998
5747891 Method of blocking bidirectional flow of current May. 5, 1998
5736767 Semiconductor device including a CMOSFET of a single-gate Apr. 7, 1998
5731612 Insulated gate field effect transistor structure having a unilateral source extension Mar. 24, 1998
5726477 Threshold adjustment in field effect semiconductor devices Mar. 10, 1998
5696401 Semiconductor device and method of fabricating the same Dec. 9, 1997
5691562 Through glass ROM code implant to reduce product delivering time Nov. 25, 1997
5675172 Metal-insulator-semiconductor device having reduced threshold voltage and high mobility for high speed/low-voltage operation Oct. 7, 1997
5675165 Stable SRAM cell using low backgate biased threshold voltage select transistors Oct. 7, 1997
5663589 Current regulating semiconductor integrated circuit device and fabrication method of the same Sep. 2, 1997
5661326 Mask ROM process with self-aligned ROM code implant Aug. 26, 1997
5646428 Output circuit provided with source follower circuit having depletion type MOS transistor Jul. 8, 1997
5635749 High performance field effect transistor with lai region Jun. 3, 1997
5631481 Flat-cell mask ROM integrated circuit May. 20, 1997
5629536 High voltage current limiter and method for making May. 13, 1997
5612566 Bidirectional blocking lateral MOSFET with improved on-resistance Mar. 18, 1997
5589701 Process for realizing P-channel MOS transistors having a low threshold voltage in semiconductor integrated circuits for analog applications Dec. 31, 1996

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