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Class Information
Number: 257/402
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode)
Description: Subject matter wherein the device includes means for permanently adjusting the threshold voltage at which the device conducts (e.g., depletion mode IGFETs).










Sub-classes under this class:

Class Number Class Name Patents
257/403 With channel conductivity dopant same type as that of source and drain 170
257/407 With gate electrode of controlled workfunction material (e.g., low workfunction gate material) 356
257/405 With gate insulator containing specified permanent charge 96


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
6724053 PMOSFET device with localized nitrogen sidewall implantation Apr. 20, 2004
6717221 Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks Apr. 6, 2004
6703671 Insulated gate semiconductor device and method of manufacturing the same Mar. 9, 2004
6693331 Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation Feb. 17, 2004
6686631 Negative differential resistance (NDR) device and method of operating same Feb. 3, 2004
6664601 Method of orperating a dual mode FET & logic circuit having negative differential resistance mode Dec. 16, 2003
6661062 Semiconductor integrated circuit device and method of manufacturing the same Dec. 9, 2003
6638801 Semiconductor device and its manufacturing method Oct. 28, 2003
6627962 Semiconductor memory Sep. 30, 2003
6624455 Semiconductor device and method of manufacturing the same including drain pinned along channel width Sep. 23, 2003
6621116 Enhanced EPROM structures with accentuated hot electron generation regions Sep. 16, 2003
6617647 Insulated gate semiconductor device and method of manufacturing the same Sep. 9, 2003
6586817 Device including a resistive path to introduce an equivalent RC circuit Jul. 1, 2003
6583470 Radiation tolerant back biased CMOS VLSI Jun. 24, 2003
6563182 Semiconductor device and manufacturing method thereof May. 13, 2003
6558994 Dual silicon-on-insulator device wafer die May. 6, 2003
6555454 Semiconductor memory device incorporating therein ruthenium electrode and method for the manufacture thereof Apr. 29, 2003
6541829 Semiconductor device and method of manufacturing the same Apr. 1, 2003
6538293 Semiconductor integrated circuit device and method of manufacturing the same Mar. 25, 2003
6531746 Semiconductor device with high-speed switching circuit implemented by MIS transistors and process for fabrication thereof Mar. 11, 2003
6531379 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Mar. 11, 2003
6521961 Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor Feb. 18, 2003
6518623 Semiconductor device having a buried-channel MOS structure Feb. 11, 2003
6512274 CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same Jan. 28, 2003
6507051 Semiconductor integrated circuit device Jan. 14, 2003
6495891 Transistor having impurity concentration distribution capable of improving short channel effect Dec. 17, 2002
6492671 CMOS process Dec. 10, 2002
6482724 Integrated circuit asymmetric transistors Nov. 19, 2002
6479862 Charge trapping device and method for implementing a transistor having a negative differential resistance mode Nov. 12, 2002
6479846 Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity Nov. 12, 2002
6465819 Solid state imaging apparatus with transistors having different gate insulating film thickness and manufacturing method for the same Oct. 15, 2002
6455903 Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation Sep. 24, 2002
6433398 Semiconductor integrated circuit device Aug. 13, 2002
6426532 Semiconductor device and method of manufacture thereof Jul. 30, 2002
6403997 Method for manufacturing semiconductor devices Jun. 11, 2002
6396103 Optimized single side pocket implant location for a field effect transistor May. 28, 2002
6384445 Semiconductor memory device including memory cell transistors formed on SOI substrate and having fixed body regions May. 7, 2002
6373106 Semiconductor device and method for fabricating the same Apr. 16, 2002
6369434 Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors Apr. 9, 2002
6329691 Device for protection of sensitive gate dielectrics of advanced non-volatile memory devices from damage due to plasma charging Dec. 11, 2001
6326656 Lateral high-voltage transistor Dec. 4, 2001
6320236 Optimization of logic gates with criss-cross implants to form asymmetric channel regions Nov. 20, 2001
6320237 Decoupling capacitor structure Nov. 20, 2001
6307236 Semiconductor integrated circuit device Oct. 23, 2001
6307238 Methods of forming field effect transistors and field effect transistor circuitry Oct. 23, 2001
6271572 Multi-voltage level semiconductor device and its manufacture Aug. 7, 2001
6262455 Method of forming dual gate oxide layers of varying thickness on a single substrate Jul. 17, 2001
6262460 Long channel MOS transistor that utilizes a schottky diode to increase the threshold voltage of the transistor Jul. 17, 2001
6255153 Method of manufacturing a semiconductor device Jul. 3, 2001
6229188 MOS field effect transistor and its manufacturing method May. 8, 2001

1 2 3 4 5 6 7










 
 
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