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Class Information
Number: 257/402
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With permanent threshold adjustment (e.g., depletion mode)
Description: Subject matter wherein the device includes means for permanently adjusting the threshold voltage at which the device conducts (e.g., depletion mode IGFETs).










Sub-classes under this class:

Class Number Class Name Patents
257/403 With channel conductivity dopant same type as that of source and drain 170
257/407 With gate electrode of controlled workfunction material (e.g., low workfunction gate material) 356
257/405 With gate insulator containing specified permanent charge 96


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
7242055 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide Jul. 10, 2007
7224023 Semiconductor device and method of manufacturing thereof May. 29, 2007
7224205 Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors May. 29, 2007
7205610 Source follower circuit or bootstrap circuit, driver circuit comprising such circuit, and display device comprising such driver circuit Apr. 17, 2007
7205619 Method of producing semiconductor device and semiconductor device Apr. 17, 2007
7187044 Complementary metal gate electrode technology Mar. 6, 2007
7170109 Heterojunction semiconductor device with element isolation structure Jan. 30, 2007
7129544 Vertical compound semiconductor field effect transistor structure Oct. 31, 2006
7119402 Field effect transistor and manufacturing method thereof Oct. 10, 2006
7098507 Floating-body dynamic random access memory and method of fabrication in tri-gate technology Aug. 29, 2006
7091597 Power supply device Aug. 15, 2006
7087973 Ballast resistors for transistor devices Aug. 8, 2006
7081656 CMOS constructions Jul. 25, 2006
7081655 Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect Jul. 25, 2006
7078776 Low threshold voltage semiconductor device Jul. 18, 2006
7071518 Schottky device Jul. 4, 2006
7057243 Hybrid semiconductor device having an n+ (p) doped n-type gate and method of producing the same Jun. 6, 2006
7053450 Semiconductor device and method for fabricating the same May. 30, 2006
7045860 Semiconductor device and manufacturing method thereof May. 16, 2006
7042051 Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region May. 9, 2006
7023060 Methods for programming read-only memory cells and associated memories Apr. 4, 2006
7015546 Deterministically doped field-effect devices and methods of making same Mar. 21, 2006
6998683 TFT-based common gate CMOS inverters, and computer systems utilizing novel CMOS inverters Feb. 14, 2006
6972465 CMOS process compatible, tunable negative differential resistance (NDR) device and method of operating same Dec. 6, 2005
6969894 Variable threshold semiconductor device and method of operating same Nov. 29, 2005
6967380 CMOS device having retrograde n-well and p-well Nov. 22, 2005
6965151 Device including a resistive path to introduce an equivalent RC circuit Nov. 15, 2005
6958519 Methods of forming field effect transistors and field effect transistor circuitry Oct. 25, 2005
6940705 Capacitor with enhanced performance and method of manufacture Sep. 6, 2005
6919600 Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact Jul. 19, 2005
6885054 Threshold voltage stabilizer, method of manufacturing and integrated circuit employing the same Apr. 26, 2005
6879006 MOS transistor and method for fabricating the same Apr. 12, 2005
6878579 Semiconductor device and method of manufacturing the same Apr. 12, 2005
6852995 Field effect transistor (FET) and FET circuitry Feb. 8, 2005
6841836 Integrated device with Schottky diode and MOS transistor and related manufacturing process Jan. 11, 2005
6828620 Nonvolatile memory cell with low doping region Dec. 7, 2004
6828638 Decoupling capacitors for thin gate oxides Dec. 7, 2004
6812527 Method to control device threshold of SOI MOSFET's Nov. 2, 2004
6800924 Device including a resistive path to introduce an equivalent RC circuit Oct. 5, 2004
6791106 Semiconductor device and method of manufacturing the same Sep. 14, 2004
6787850 Dynamic threshold voltage MOS transistor fitted with a current limiter Sep. 7, 2004
6784059 Semiconductor device and method of manufacturing thereof Aug. 31, 2004
6784492 Semiconductor device including a gate-insulated transistor Aug. 31, 2004
6781213 Device including a resistive path to introduce an equivalent RC circuit Aug. 24, 2004
6777779 Device including a resistive path to introduce an equivalent RC circuit Aug. 17, 2004
6770944 Semiconductor device having counter and channel impurity regions Aug. 3, 2004
6762469 High performance CMOS device structure with mid-gap metal gate Jul. 13, 2004
6744082 Static pass transistor logic with transistors with multiple vertical gates Jun. 1, 2004
6740942 Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact May. 25, 2004
6727559 Compound semiconductor device Apr. 27, 2004

1 2 3 4 5 6 7










 
 
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