Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Browse by Category: Main > Physics
Class Information
Number: 257/401
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet)
Description: Subject matter wherein the device has a specific physical configuration or layout (e.g., ring gate).










Patents under this class:

Patent Number Title Of Patent Date Issued
8415751 Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain Apr. 9, 2013
8415750 Semiconductor device and method of fabricating the same Apr. 9, 2013
8415220 Constrained oxidation of suspended micro- and nano-structures Apr. 9, 2013
8410599 Power MOSFET package Apr. 2, 2013
8410557 Semiconductor device and method of manufacturing the same Apr. 2, 2013
8410544 finFETs and methods of making same Apr. 2, 2013
8410526 Semiconductor integrated circuit device with reduced cell size Apr. 2, 2013
8409989 Structure and method to fabricate a body contact Apr. 2, 2013
8405164 Tri-gate transistor device with stress incorporation layer and method of fabrication Mar. 26, 2013
8405163 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor Mar. 26, 2013
8405162 Integrated circuit including gate electrode level region including cross-coupled transistors having at least one gate contact located over outer portion of gate electrode level region Mar. 26, 2013
8405161 Driving device for unit pixel of organic light emitting display and method of manufacturing the same Mar. 26, 2013
8399938 Stressed Fin-FET devices with low contact resistance Mar. 19, 2013
8399937 Semiconductor body and method for the design of a semiconductor body with a connecting line Mar. 19, 2013
8399929 Semiconductor integrated circuit device Mar. 19, 2013
8395224 Linear gate level cross-coupled transistor device with non-overlapping PMOS transistors and non-overlapping NMOS transistors relative to directions of gate electrodes Mar. 12, 2013
8395208 Semiconductor device and method of producing the same Mar. 12, 2013
8395207 High-voltage vertical transistor with a varied width silicon pillar Mar. 12, 2013
8395191 Semiconductor device and structure Mar. 12, 2013
8390330 Base cell for implementing an engineering change order (ECO) Mar. 5, 2013
8390079 Sealed air gap for semiconductor chip Mar. 5, 2013
8390078 Quadrangle MOS transistors Mar. 5, 2013
8390059 Power semiconductor device Mar. 5, 2013
8390034 Methods for isolating portions of a loop of pitch-multiplied material and related structures Mar. 5, 2013
8384164 Interconnect structure Feb. 26, 2013
8384163 Layout design tool for semiconductor integrated circuit Feb. 26, 2013
8384151 Semiconductor device and a reverse conducting IGBT Feb. 26, 2013
8384142 Non-planar thin fin transistor Feb. 26, 2013
8378417 Semiconductor device including a well potential supply device and a vertical MOS transistor Feb. 19, 2013
8373238 FinFETs with multiple Fin heights Feb. 12, 2013
8373237 Transistor and method of manufacturing the same Feb. 12, 2013
8372732 Method for fabricating non-volatile memory device Feb. 12, 2013
8368170 Reducing device performance drift caused by large spacings between active regions Feb. 5, 2013
8368144 Isolated multigate FET circuit blocks with different ground potentials Feb. 5, 2013
8368142 Semiconductor device and method of manufacturing the same Feb. 5, 2013
8368120 Hybrid semiconductor device having a GaN transistor and a silicon MOSFET Feb. 5, 2013
8367490 Semiconductor structure and method for manufacturing the same Feb. 5, 2013
8362575 Controlling the shape of source/drain regions in FinFETs Jan. 29, 2013
8362574 Faceted EPI shape and half-wrap around silicide in S/D merged FinFET Jan. 29, 2013
8362573 Integrated circuits and manufacturing methods thereof Jan. 29, 2013
8362546 Cross-point diode arrays and methods of manufacturing cross-point diode arrays Jan. 29, 2013
8362543 Semiconductor nonvolatile memory device with inter-gate insulating film formed on the side surface of a memory cell and method for manufacturing the same Jan. 29, 2013
8357972 Semiconductor power device Jan. 22, 2013
8354735 Semiconductor chips having guard rings and methods of fabricating the same Jan. 15, 2013
8354311 Method for forming nanofin transistors Jan. 15, 2013
8354292 CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same Jan. 15, 2013
8350340 Structure of output stage Jan. 8, 2013
8350339 Integrated circuits having dummy gate electrodes and methods of forming the same Jan. 8, 2013
8350330 Dummy pattern design for reducing device performance drift Jan. 8, 2013
8350328 Semiconductor device and method of manufacturing the same Jan. 8, 2013











 
 
  Recently Added Patents
Multi currency exchanges between participants
Selection of a suitable node to host a virtual machine in an environment containing a large number of nodes
Multifunction switch for vehicle having lighting module
Analysis of stress impact on transistor performance
Local access to data while roaming with a mobile telephony device
Asynchronous line interface rate adaptation to the physical layer with synchronous lines at the connection layer
Proximity sensor arrangement in a mobile device
  Randomly Featured Patents
Process for high pressure impact coating
Wavelength selection, multiplexing and demultiplexing method and apparatus
Aminomethyl beta-secretase inhibitors for the treatment of alzheimer's disease
Self-drilling fastener
Indexing system for corrugated metal forming
Material screening systems
Method for fabricating ZnO thin films
Arrangement for the production of electroradiographic x-ray photographs
Structured strained substrate for forming strained transistors with reduced thickness of active layer
Liquid ejection apparatus