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Class Information
Number: 257/401
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet)
Description: Subject matter wherein the device has a specific physical configuration or layout (e.g., ring gate).










Patents under this class:

Patent Number Title Of Patent Date Issued
8581343 Electrical connectivity for circuit applications Nov. 12, 2013
8581336 Power trench MOSFET rectifier Nov. 12, 2013
8581304 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset and align Nov. 12, 2013
8581303 Integrated circuit including cross-coupled trasistors having gate electrodes formed within gate level feature layout channels with four inside positioned gate contacts having offset relationsh Nov. 12, 2013
8575707 Semiconductor power device having a super-junction structure Nov. 5, 2013
8575706 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level features inner extensions Nov. 5, 2013
8575703 Semiconductor device layout reducing imbalance characteristics of paired transistors Nov. 5, 2013
8575616 Thin film transistor substrate and method for manufacturing the same Nov. 5, 2013
8574982 Implementing eDRAM stacked FET structure Nov. 5, 2013
8569860 Semiconductor devices having line type active regions and methods of fabricating the same Oct. 29, 2013
8569843 Semiconductor device Oct. 29, 2013
8569842 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Oct. 29, 2013
8569841 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least one gate level feature extending into adjacent gate Oct. 29, 2013
8569812 Floating body memory cell having gates favoring different conductivity type regions Oct. 29, 2013
8569811 Self clamping FET devices in circuits using transient sources Oct. 29, 2013
8564071 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two different gate level feature extensions beyond Oct. 22, 2013
8558322 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with at least two gate electrodes electrically connected to each Oct. 15, 2013
8552510 Semiconductor device having ring-shaped gate electrode, design apparatus, and program Oct. 8, 2013
8552509 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with other transistors positioned between cross-coupled transisto Oct. 8, 2013
8552508 Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with shared diffusion regions on opposite sides of two-transistor Oct. 8, 2013
8551847 Method for forming metal gate Oct. 8, 2013
8551841 IO ESD device and methods for forming the same Oct. 8, 2013
8546891 Fin profile structure and method of making same Oct. 1, 2013
8546885 Metal gate electrode of a field effect transistor Oct. 1, 2013
8546876 Systems and devices including multi-transistor cells and methods of using, making, and operating the same Oct. 1, 2013
8546851 Semiconductor integrated circuit device Oct. 1, 2013
8546223 Semiconductor device and manufacturing method of the same Oct. 1, 2013
8545962 Nano-fiber arrayed surfaces Oct. 1, 2013
8541847 Semiconductor device and method for fabricating the same Sep. 24, 2013
8541839 Semiconductor component and method for producing it Sep. 24, 2013
8541837 Semiconductor field effect power switching device Sep. 24, 2013
8541271 Monolithic integration of multiple compound semiconductor FET devices Sep. 24, 2013
8536658 Mechanisms for forming ultra shallow junction Sep. 17, 2013
8536622 Semiconductor device and power supply apparatus Sep. 17, 2013
8530978 High current high voltage GaN field effect transistors and method of fabricating same Sep. 10, 2013
8530975 Semiconductor device with gate edge protrusion Sep. 10, 2013
8530292 Method for manufacturing a strained channel MOS transistor Sep. 10, 2013
8519485 Pillar structure for memory device and method Aug. 27, 2013
8519462 6F2 DRAM cell Aug. 27, 2013
8519445 Poly profile engineering to modulate spacer induced stress for device enhancement Aug. 27, 2013
8519444 Modified design rules to improve device performance Aug. 27, 2013
8513742 Method for manufacturing contact and semiconductor device having said contact Aug. 20, 2013
8513125 Manufacturing a microelectronic device comprising silicon and germanium nanowires integrated on a same substrate Aug. 20, 2013
8513090 Method for manufacturing semiconductor substrate, and semiconductor device Aug. 20, 2013
8513072 Manufacturing method of semiconductor device with element isolation region formed within Aug. 20, 2013
RE44430 PMOS depletable drain extension made from NMOS dual depletable drain extensions Aug. 13, 2013
8508000 Fin profile structure and method of making same Aug. 13, 2013
8507999 Semiconductor device, method of fabricating the same, and semiconductor module and electronic system including the semiconductor device Aug. 13, 2013
8507981 Method of manufacturing NMOS transistor with low trigger voltage Aug. 13, 2013
8502324 Semiconductor wafer having scribe lane alignment marks for reducing crack propagation Aug. 6, 2013











 
 
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