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Class Information
Number: 257/401
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet)
Description: Subject matter wherein the device has a specific physical configuration or layout (e.g., ring gate).










Patents under this class:
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Patent Number Title Of Patent Date Issued
7446381 Semiconductor memory device and method for fabricating the same Nov. 4, 2008
7446371 Non-volatile memory cell structure with charge trapping layers and method of fabricating the same Nov. 4, 2008
7446355 Electrical device and method for fabricating the same Nov. 4, 2008
7446354 Power semiconductor device having improved performance and method Nov. 4, 2008
7439605 Semiconductor device and method for manufacturing the same Oct. 21, 2008
7439595 Field effect transistor having vertical channel structure Oct. 21, 2008
7439584 Structure and method for RESURF LDMOSFET with a current diverter Oct. 21, 2008
7439583 Tungsten plug drain extension Oct. 21, 2008
7439578 Semiconductor device Oct. 21, 2008
7436033 Tri-gated molecular field effect transistor and method of fabricating the same Oct. 14, 2008
7432568 High voltage operating field effect transistor, and bias circuit therefor and high voltage circuit thereof Oct. 7, 2008
7432564 Pixel structure Oct. 7, 2008
7432563 Method for producing a semiconductor component and semiconductor component produced by the same Oct. 7, 2008
7432558 Formation of semiconductor devices to achieve <100> channel orientation Oct. 7, 2008
7432557 FinFET device with multiple channels Oct. 7, 2008
7429775 Method of fabricating strain-silicon CMOS Sep. 30, 2008
7427792 Power transistor including a leadframe and a semiconductor chip arranged on the leadframe Sep. 23, 2008
7427541 Carbon nanotube energy well (CNEW) field effect transistor Sep. 23, 2008
7425745 Semiconductor device and method for manufacturing the same Sep. 16, 2008
7423325 Lateral field-effect-controllable semiconductor component for RF applications Sep. 9, 2008
7423324 Double-gate MOS transistor, double-gate CMOS transistor, and method for manufacturing the same Sep. 9, 2008
7420253 Three-gate transistor structure Sep. 2, 2008
7420252 LDMOS device with improved ESD performance Sep. 2, 2008
7420249 Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer Sep. 2, 2008
7420247 Power LDMOS transistor Sep. 2, 2008
7419871 Methods of forming semiconductor constructions Sep. 2, 2008
7417284 Semiconductor device and method of manufacturing the same Aug. 26, 2008
7417252 Flat panel display Aug. 26, 2008
7414292 Semiconductor device and its manufacturing method Aug. 19, 2008
7414290 Double gate transistor, method of manufacturing same, and system containing same Aug. 19, 2008
7413955 Transistor for memory device and method for manufacturing the same Aug. 19, 2008
7411269 Isolation structure configurations for modifying stresses in semiconductor devices Aug. 12, 2008
7411241 Vertical type nanotube semiconductor device Aug. 12, 2008
7409660 Method and end cell library for avoiding substrate noise in an integrated circuit Aug. 5, 2008
7408230 EEPROM device having first and second doped regions that increase an effective channel length Aug. 5, 2008
7408226 Electronic card with protection against aerial discharge Aug. 5, 2008
7405444 Micro-mechanically strained semiconductor film Jul. 29, 2008
7405443 Dual gate lateral double-diffused MOSFET (LDMOS) transistor Jul. 29, 2008
7402875 Lateral undercut of metal gate in SOI device Jul. 22, 2008
7402874 One time programmable EPROM fabrication in STI CMOS technology Jul. 22, 2008
7402863 Trench FET with reduced mesa width and source contact inside active trench Jul. 22, 2008
7397091 SiGe nickel barrier structure employed in a CMOS device to prevent excess diffusion of nickel used in the silicide material Jul. 8, 2008
7397085 Thermal coupling of matched SOI device bodies Jul. 8, 2008
7396765 Method of fabricating a liquid crystal display device Jul. 8, 2008
7394116 Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same Jul. 1, 2008
7391088 Integrated circuit with multi-length output transistor segments Jun. 24, 2008
7388266 Structure for leakage prevention of a high voltage device Jun. 17, 2008
7388263 Shallow trench isolation dummy pattern and layout method using the same Jun. 17, 2008
7388259 Strained finFET CMOS device structures Jun. 17, 2008
7388256 Semiconductor device and a method of manufacturing the same Jun. 17, 2008

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