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Class Information
Number: 257/400
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With means to prevent parasitic conduction channels > With heavily doped channel stop portion
Description: Subject matter wherein the means to prevent parasitic conduction channels from forming comprises a region of heavy doping concentration.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8691621 Thiol bond formation concurrent with silver nanoparticle ink thermal treatment Apr. 8, 2014
8617956 Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device Dec. 31, 2013
8592918 Forming inter-device STI regions and intra-device STI regions using different dielectric materials Nov. 26, 2013
8580401 Curable material and its application Nov. 12, 2013
8330231 Transistor having gate dielectric protection and structure Dec. 11, 2012
8330254 Semiconductor device Dec. 11, 2012
8264015 Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor Sep. 11, 2012
8138581 Semiconductor device with channel stop trench and method Mar. 20, 2012
8125036 Integrated circuit having an edge passivation and oxidation resistant layer and method Feb. 28, 2012
7834406 High-voltage metal-oxide-semiconductor device and method of manufacturing the same Nov. 16, 2010
7816229 Semiconductor device with channel stop trench and method Oct. 19, 2010
7795675 Termination for trench MIS device Sep. 14, 2010
7777294 Semiconductor device including a high-breakdown voltage MOS transistor Aug. 17, 2010
7671424 Power MOSFET, semiconductor device including the power MOSFET, and method for making the power MOSFET Mar. 2, 2010
7633129 Memory devices with active and passive layers having multiple self-assembled sublayers Dec. 15, 2009
7541627 Method and apparatus for improving sensitivity in vertical color CMOS image sensors Jun. 2, 2009
7528442 Semiconductor device and manufacturing method thereof May. 5, 2009
7400018 End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon doping Jul. 15, 2008
7355226 Power semiconductor and method of fabrication Apr. 8, 2008
7271468 High-voltage compatible, full-depleted CCD Sep. 18, 2007
7227235 Electrowetting battery having a nanostructured electrode surface Jun. 5, 2007
7187039 Semiconductor integrated circuit device Mar. 6, 2007
7157374 Method for removing a cap from the gate of an embedded silicon germanium semiconductor device Jan. 2, 2007
7019379 Semiconductor device comprising voltage regulator element Mar. 28, 2006
7002210 Semiconductor device including a high-breakdown voltage MOS transistor Feb. 21, 2006
6953961 DRAM structure and fabricating method thereof Oct. 11, 2005
6894354 Trench isolated transistors, trench isolation structures, memory cells, and DRAMs May. 17, 2005
6841837 Semiconductor device Jan. 11, 2005
6806541 Field effect transistor with improved isolation structures Oct. 19, 2004
6773995 Double diffused MOS transistor and method for manufacturing same Aug. 10, 2004
6690074 Radiation resistant semiconductor device structure Feb. 10, 2004
6518628 Integrated CMOS circuit configuration, and production of same Feb. 11, 2003
6365945 Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch Apr. 2, 2002
6323520 Method for forming channel-region doping profile for semiconductor device Nov. 27, 2001
6285073 Contact structure and method of formation Sep. 4, 2001
6194766 Integrated circuit having low voltage and high voltage devices on a common semiconductor substrate Feb. 27, 2001
6150213 Method of forming a cob dram by using self-aligned node and bit line contact plug Nov. 21, 2000
6087691 Semiconductor device having lower minority carrier noise Jul. 11, 2000
6064110 Digital circuit with transistor geometry and channel stops providing camouflage against reverse engineering May. 16, 2000
6046475 Structure and method for manufacturing devices having inverse T-shaped well regions Apr. 4, 2000
5994731 Semiconductor device and fabrication method thereof Nov. 30, 1999
5949116 MOS device having a source/drain region conforming to a conductive material filled French structure in a substrate Sep. 7, 1999
5883405 MOS transistor read-only memory device Mar. 16, 1999
5880502 Low and high voltage CMOS devices and process for fabricating same Mar. 9, 1999
5847426 Contactless flash EPROM using poly silicon isolation Dec. 8, 1998
5841163 Integrated circuit memory devices having wide and narrow channel stop layers Nov. 24, 1998
5828108 Semiconductor integrated circuit suppressing noises due to short-circuit/substrate currents Oct. 27, 1998
5789789 Semiconductor device and manufacturing method for improved voltage resistance between an N-well and N-type diffusion layer Aug. 4, 1998
5751047 Semiconductor circuit with reduced P-N junction capacitance May. 12, 1998
5751042 Internal ESD protection circuit for semiconductor devices May. 12, 1998

1 2 3

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