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Class Information
Number: 257/4
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material > With specified electrode composition or configuration
Description: Subject matter wherein the amorphous material bulk effect switching device has electrodes which have a particular chemical constituency or shape.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619915 |
Resistive random access memory device |
Nov. 17, 2009 |
| 7619311 |
Memory cell device with coplanar electrode surface and method |
Nov. 17, 2009 |
| 7615401 |
Methods of fabricating multi-layer phase-changeable memory devices |
Nov. 10, 2009 |
| 7615769 |
Nonvolatile memory device and fabrication method thereof |
Nov. 10, 2009 |
| 7615770 |
Integrated circuit having an insulated memory |
Nov. 10, 2009 |
| 7615771 |
Memory array having memory cells formed from metallic material |
Nov. 10, 2009 |
| 7612359 |
Microelectronic devices using sacrificial layers and structures fabricated by same |
Nov. 3, 2009 |
| 7612358 |
Nonvolatile nanochannel memory device using mesoporous material |
Nov. 3, 2009 |
| 7608851 |
Switch array circuit and system using programmable via structures with phase change materials |
Oct. 27, 2009 |
| 7608850 |
Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same |
Oct. 27, 2009 |
| 7608849 |
Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements |
Oct. 27, 2009 |
| 7602633 |
Non-volatile memory device, method of manufacturing the same, and method of operating the same |
Oct. 13, 2009 |
| 7598113 |
Phase change memory device and fabricating method therefor |
Oct. 6, 2009 |
| 7592617 |
Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
Sep. 22, 2009 |
| 7592649 |
Memory word lines with interlaced metal layers |
Sep. 22, 2009 |
| 7589344 |
Semiconductor device and method of producing the same |
Sep. 15, 2009 |
| 7589343 |
Memory and access device and method therefor |
Sep. 15, 2009 |
| 7589342 |
Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same |
Sep. 15, 2009 |
| 7586777 |
Resistance variable memory with temperature tolerant materials |
Sep. 8, 2009 |
| 7582546 |
Device with damaged breakdown layer |
Sep. 1, 2009 |
| 7582889 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
Sep. 1, 2009 |
| 7582890 |
Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof |
Sep. 1, 2009 |
| 7580276 |
Nonvolatile memory element |
Aug. 25, 2009 |
| 7579614 |
Magnetic random access memory |
Aug. 25, 2009 |
| 7579612 |
Resistive memory device having enhanced resist ratio and method of manufacturing same |
Aug. 25, 2009 |
| 7576350 |
Programmable resistance memory element with multi-regioned contact |
Aug. 18, 2009 |
| 7577024 |
Streaming mode programming in phase change memories |
Aug. 18, 2009 |
| 7572666 |
Reduced area intersection between electrode and programming element |
Aug. 11, 2009 |
| 7573058 |
Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories |
Aug. 11, 2009 |
| 7569844 |
Memory cell sidewall contacting side electrode |
Aug. 4, 2009 |
| 7569846 |
Phase-change memory device including nanowires and method of manufacturing the same |
Aug. 4, 2009 |
| 7566895 |
Phase change memory device and method for fabricating the same |
Jul. 28, 2009 |
| 7560722 |
Optimized solid electrolyte for programmable metallization cell devices and structures |
Jul. 14, 2009 |
| 7560724 |
Storage device with reversible resistance change elements |
Jul. 14, 2009 |
| 7550380 |
Electroless plating of metal caps for chalcogenide-based memory devices |
Jun. 23, 2009 |
| 7550756 |
Semiconductor memory |
Jun. 23, 2009 |
| 7551473 |
Programmable resistive memory with diode structure |
Jun. 23, 2009 |
| 7547906 |
Multi-functional chalcogenide electronic devices having gain |
Jun. 16, 2009 |
| 7545668 |
Mushroom phase change memory having a multilayer electrode |
Jun. 9, 2009 |
| 7541609 |
Phase change memory cell having a sidewall contact |
Jun. 2, 2009 |
| 7541608 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells |
Jun. 2, 2009 |
| 7541607 |
Electrically rewritable non-volatile memory element and method of manufacturing the same |
Jun. 2, 2009 |
| 7538338 |
Memory using variable tunnel barrier widths |
May. 26, 2009 |
| 7531378 |
Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element |
May. 12, 2009 |
| 7531824 |
High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate |
May. 12, 2009 |
| 7531825 |
Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
May. 12, 2009 |
| 7529123 |
Method of operating a multi-terminal electronic device |
May. 5, 2009 |
| 7527985 |
Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas |
May. 5, 2009 |
| 7525117 |
Chalcogenide devices and materials having reduced germanium or telluruim content |
Apr. 28, 2009 |
| 7521704 |
Memory device using multi-layer with a graded resistance change |
Apr. 21, 2009 |
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