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Browse by Category: Main > Physics
Class Information
Number: 257/4
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Bulk effect device > Bulk effect switching in amorphous material > With specified electrode composition or configuration
Description: Subject matter wherein the amorphous material bulk effect switching device has electrodes which have a particular chemical constituency or shape.










Patents under this class:

Patent Number Title Of Patent Date Issued
8710484 Method for manufacturing non-volatile memory device, non-volatile memory element, and non-volatile memory device Apr. 29, 2014
8710483 Memristive junction with intrinsic rectifier Apr. 29, 2014
8710482 Memory component and memory device Apr. 29, 2014
8710480 Phase-change memory device having multiple diodes Apr. 29, 2014
8710478 Nonvolatile semiconductor storage device and a manufacturing method thereof Apr. 29, 2014
8704205 Semiconductor structure with improved capacitance of bit line Apr. 22, 2014
8704204 Ferroelectric nanoshell devices Apr. 22, 2014
8704203 Transition metal oxide bilayers Apr. 22, 2014
8692224 High consistency resistive memory and manufacturing method thereof Apr. 8, 2014
8692223 Resistance variable memory device including nano particles and method for fabricating the same Apr. 8, 2014
8692222 Nonvolatile memory element and method of manufacturing the nonvolatile memory element Apr. 8, 2014
8691392 Junctions comprising molecular bilayers for the use in electronic devices Apr. 8, 2014
8687432 Multi-bit resistive-switching memory cell and array Apr. 1, 2014
8687405 Phase change memory and method for fabricating phase change memory Apr. 1, 2014
8687402 Silicon-based nanoscale resistive device with adjustable resistance Apr. 1, 2014
8686391 Pore phase change material cell fabricated from recessed pillar Apr. 1, 2014
8686389 Diffusion barrier layer for resistive random access memory cells Apr. 1, 2014
8686386 Nonvolatile memory device using a varistor as a current limiter element Apr. 1, 2014
8686385 Phase-change random access memory device and method of manufacturing the same Apr. 1, 2014
8686384 Memory device and method for manufacturing the same Apr. 1, 2014
8685786 Method of manufacturing a semiconductor memory device having a resistance change memory layer Apr. 1, 2014
8680505 Semiconductor memory device Mar. 25, 2014
8680504 Diamond type quad-resistor cells of PRAM Mar. 25, 2014
8680503 Carbon nano-film reversible resistance-switchable elements and methods of forming the same Mar. 25, 2014
8680502 Amorphous semiconductor layer memory device Mar. 25, 2014
8680500 Phase change memory devices having buried metal silicide patterns Mar. 25, 2014
8680499 Memory cells Mar. 25, 2014
8674336 Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays Mar. 18, 2014
8674334 Memory elements using self-aligned phase change material layers and methods of manufacturing same Mar. 18, 2014
8674333 Variable-resistance material memories and methods Mar. 18, 2014
8674332 RRAM device with an embedded selector structure and methods of making same Mar. 18, 2014
8673692 Charging controlled RRAM device, and methods of making same Mar. 18, 2014
8664633 Non-volatile memory devices having resistance changeable elements and related systems and methods Mar. 4, 2014
8664632 Memory device Mar. 4, 2014
8659002 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same Feb. 25, 2014
8659001 Defect gradient to boost nonvolatile memory performance Feb. 25, 2014
8659000 Amorphous semiiconductor layer memory device Feb. 25, 2014
8658999 Semiconductor device Feb. 25, 2014
8658998 Semiconductor storage device Feb. 25, 2014
8658510 Processing phase change material to improve programming speed Feb. 25, 2014
8658476 Low temperature P+ polycrystalline silicon material for non-volatile memory device Feb. 25, 2014
8653496 Memory cells Feb. 18, 2014
8653493 Variable resistance memory devices and methods of manufacturing the same Feb. 18, 2014
8652923 Nonvolatile memory device having an electrode interface coupling region Feb. 18, 2014
8649213 Multiple bit phase change memory cell Feb. 11, 2014
8648326 Phase change memory electrode with sheath for reduced programming current Feb. 11, 2014
8648323 Nonvolatile memory device and method of fabricating the same Feb. 11, 2014
8642990 Diamond type quad-resistor cells of PRAM Feb. 4, 2014
8642989 Resistive random access memory cell and memory Feb. 4, 2014
8642985 Memory Cell Feb. 4, 2014











 
 
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