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Class Information
Number: 257/399
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With means to prevent parasitic conduction channels > Thick insulator portion > Combined with heavily doped channel stop portion
Description: Subject matter wherein the device is combined with regions of heavy doping concentration.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8592902 Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure Nov. 26, 2013
8264015 Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor Sep. 11, 2012
8188550 Integrated circuit structure with electrical strap and its method of forming May. 29, 2012
8138581 Semiconductor device with channel stop trench and method Mar. 20, 2012
8102011 Semiconductor device including a field effect transistor and method for manufacturing the same Jan. 24, 2012
7880226 Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device Feb. 1, 2011
7834406 High-voltage metal-oxide-semiconductor device and method of manufacturing the same Nov. 16, 2010
RE41867 MOS image pick-up device and camera incorporating the same Oct. 26, 2010
7816229 Semiconductor device with channel stop trench and method Oct. 19, 2010
7795675 Termination for trench MIS device Sep. 14, 2010
7777294 Semiconductor device including a high-breakdown voltage MOS transistor Aug. 17, 2010
7727831 Semiconductor device Jun. 1, 2010
7541627 Method and apparatus for improving sensitivity in vertical color CMOS image sensors Jun. 2, 2009
7528442 Semiconductor device and manufacturing method thereof May. 5, 2009
7400018 End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon doping Jul. 15, 2008
7276750 Semiconductor device having trench capacitor and fabrication method for the same Oct. 2, 2007
7205593 MOS image pick-up device and camera incorporating the same Apr. 17, 2007
7198968 Method of fabricating thin film transistor array substrate Apr. 3, 2007
7193276 Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layer Mar. 20, 2007
7049667 Conductive channel pseudo block process and circuit to inhibit reverse engineering May. 23, 2006
7019392 Storage apparatus, card type storage apparatus, and electronic apparatus Mar. 28, 2006
7019379 Semiconductor device comprising voltage regulator element Mar. 28, 2006
7002210 Semiconductor device including a high-breakdown voltage MOS transistor Feb. 21, 2006
6953961 DRAM structure and fabricating method thereof Oct. 11, 2005
6921687 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same Jul. 26, 2005
6894354 Trench isolated transistors, trench isolation structures, memory cells, and DRAMs May. 17, 2005
6841837 Semiconductor device Jan. 11, 2005
6806541 Field effect transistor with improved isolation structures Oct. 19, 2004
6800909 Semiconductor device and method of manufacturing the same Oct. 5, 2004
6737724 Semiconductor device and method of manufacturing the same May. 18, 2004
6690074 Radiation resistant semiconductor device structure Feb. 10, 2004
6545318 Semiconductor device and manufacturing method thereof Apr. 8, 2003
6501155 Semiconductor apparatus and process for manufacturing the same Dec. 31, 2002
6489657 Semiconductor device with improved channel stopper Dec. 3, 2002
6452219 Insulated gate bipolar transistor and method of fabricating the same Sep. 17, 2002
6417538 Nonvolative semiconductor memory device with high impurity concentration under field oxide layer Jul. 9, 2002
6376296 High-voltage device and method for manufacturing high-voltage device Apr. 23, 2002
6369433 High voltage transistor with low body effect and low leakage Apr. 9, 2002
6365945 Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch Apr. 2, 2002
6351017 High voltage transistor with modified field implant mask Feb. 26, 2002
6285073 Contact structure and method of formation Sep. 4, 2001
6274912 Semiconductor memory cell and method of manufacturing the same Aug. 14, 2001
6262459 High-voltage device and method for manufacturing high-voltage device Jul. 17, 2001
6222254 Thermal conducting trench in a semiconductor structure and method for forming the same Apr. 24, 2001
6188113 High voltage transistor with high gated diode breakdown, low body effect and low leakage Feb. 13, 2001
6172391 DRAM cell arrangement and method for the manufacture thereof Jan. 9, 2001
6153892 Semiconductor device and method for manufacture thereof Nov. 28, 2000
6127708 Semiconductor device having an intervening region between channel stopper and diffusion region Oct. 3, 2000
6121650 Semiconductor memory device with increased charge retention capacity and method for forming the same Sep. 19, 2000
6046483 Planar isolation structure in an integrated circuit Apr. 4, 2000

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