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Class Information
Number: 257/396
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With means to prevent parasitic conduction channels > Thick insulator portion > Recessed into semiconductor surface
Description: Subject matter wherein the thick insulator portion is recessed into the semiconductor device surface.

Sub-classes under this class:

Class Number Class Name Patents
257/398 Combined with heavily doped channel stop portion 146
257/397 In vertical-walled groove 240

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8686515 Double-groove bidirectional vertical component Apr. 1, 2014
8674455 Semiconductor device Mar. 18, 2014
8669623 Structure related to a thick bottom dielectric (TBD) for trench-gate devices Mar. 11, 2014
8664691 Silicon photomultiplier with trench isolation Mar. 4, 2014
8659162 Semiconductor device having an interconnect structure with TSV using encapsulant for structural support Feb. 25, 2014
8653631 Transferred thin film transistor and method for manufacturing the same Feb. 18, 2014
8642429 Wide and deep oxide trench in a semiconductor substrate with interspersed vertical oxide ribs Feb. 4, 2014
8637934 Semiconductor device having vertical channels and method of manufacturing the same Jan. 28, 2014
8637935 Semiconductor device including embedded isolation regions and method for forming the same Jan. 28, 2014
8637950 Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium Jan. 28, 2014
8618615 Semiconductor device and fabrication method thereof Dec. 31, 2013
8618668 Semiconductor contact barrier Dec. 31, 2013
8592917 Semiconductor device and method for manufacturing same Nov. 26, 2013
8592882 Magnetic random access memory and manufacturing method thereof Nov. 26, 2013
8574982 Implementing eDRAM stacked FET structure Nov. 5, 2013
8558368 Bi-directional, reverse blocking battery switch Oct. 15, 2013
8552478 Corner transistor and method of fabricating the same Oct. 8, 2013
8536625 Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors Sep. 17, 2013
8536657 Non-volatile semiconductor memory device and process of manufacturing the same Sep. 17, 2013
8519486 Semiconductor device having a plurality of phosphorus-doped silicon carbide layers Aug. 27, 2013
8513780 Semiconductor device having inter-level dielectric layer with hole-sealing and method for manufacturing the same Aug. 20, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8497173 Semiconductor device and method for manufacturing the same Jul. 30, 2013
8497556 Semiconductor devices with active semiconductor height variation Jul. 30, 2013
8493524 Array substrate having a gate driving circuit with an improved output characteristic and a display apparatus having the same Jul. 23, 2013
8492866 Isolated Zener diode Jul. 23, 2013
8492850 Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type Jul. 23, 2013
8492816 Deep trench decoupling capacitor Jul. 23, 2013
8482077 Semiconductor devices and methods for fabricating the same Jul. 9, 2013
8445318 Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same May. 21, 2013
8441077 Method for forming a ruthenium metal layer and a structure comprising the ruthenium metal layer May. 14, 2013
8426926 Semiconductor devices having field effect transistors with epitaxial patterns in recessed regions Apr. 23, 2013
8426925 Memory device and method of fabricating the same Apr. 23, 2013
8415728 Memory device and method of fabricating the same Apr. 9, 2013
8405160 Multi-strained source/drain structures Mar. 26, 2013
8399936 Through substrate via semiconductor components Mar. 19, 2013
8390077 Integration of low and high voltage CMOS devices Mar. 5, 2013
8378497 Contact structures and semiconductor devices including the same Feb. 19, 2013
8377785 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Feb. 19, 2013
8362576 Transistor with reduced depletion field width Jan. 29, 2013
8338884 Selective epitaxial growth of semiconductor materials with reduced defects Dec. 25, 2012
8324081 Wafer level surface passivation of stackable integrated circuit chips Dec. 4, 2012
8319293 Semiconductor device and production method therefor Nov. 27, 2012
8314463 Method for fabricating super-steep retrograde well MOSFET on SOI or bulk silicon substrate, and device fabricated in accordance with the method Nov. 20, 2012
8299527 Vertical LDMOS device and method for fabricating same Oct. 30, 2012
8264047 Semiconductor component with a trench edge termination Sep. 11, 2012
8264046 Synergy effect of alloying materials in interconnect structures Sep. 11, 2012
8258584 Offset gate semiconductor device Sep. 4, 2012
8227869 Performance-aware logic operations for generating masks Jul. 24, 2012
8222705 Solid-state image pickup device, method of manufacturing the same and electronic apparatus Jul. 17, 2012

1 2 3 4 5 6 7

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