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Class Information
Number: 257/392
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode)
Description: Subject matter wherein the IGFETs have different threshold voltages in the same integrated circuit (e.g., both enhancement and depletion mode IGFETs in the same integrated circuit).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710594 Integrated circuit devices having conductive structures with different cross sections Apr. 29, 2014
8686514 Multiple threshold voltages in field effect transistor devices Apr. 1, 2014
8673731 Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices Mar. 18, 2014
8674419 Method of forming a CMOS structure having gate insulation films of different thicknesses Mar. 18, 2014
8669167 Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices Mar. 11, 2014
8669615 Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devices Mar. 11, 2014
8669620 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8664728 Power transistor with protected channel Mar. 4, 2014
8664066 Formation of a channel semiconductor alloy by forming a nitride based hard mask layer Mar. 4, 2014
8659112 Carbon and nitrogen doping for selected PMOS transistor on an integrated circuit Feb. 25, 2014
8659095 Semiconductor memory device and method of manufacturing the same Feb. 25, 2014
8659084 Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devices Feb. 25, 2014
8654579 Non-volatile memory device and method of manufacturing the same Feb. 18, 2014
8653601 Current control semiconductor element and control device using the same Feb. 18, 2014
8653605 Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum Feb. 18, 2014
8653607 Method for 1/F noise reduction in NMOS devices Feb. 18, 2014
8648427 Electronic device including an integrated circuit with transistors coupled to each other Feb. 11, 2014
8643115 Structure and method of T.sub.inv scaling for high .kappa. metal gate technology Feb. 4, 2014
8643116 Semiconductor device Feb. 4, 2014
8637375 Method of manufacturing a tunnel transistor and IC comprising the same Jan. 28, 2014
8637920 Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristics Jan. 28, 2014
8629511 Mask free protection of work function material portions in wide replacement gate electrodes Jan. 14, 2014
8629021 Integration scheme for an NMOS metal gate Jan. 14, 2014
8618602 Semiconductor device and method of forming the same Dec. 31, 2013
8610220 Semiconductor device with self-aligned interconnects Dec. 17, 2013
8598005 Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devices Dec. 3, 2013
8598655 Semiconductor device and method for manufacturing a semiconductor device Dec. 3, 2013
8592974 Package configurations for low EMI circuits Nov. 26, 2013
8574977 Method for manufacturing stack structure of PMOS device and adjusting gate work function Nov. 5, 2013
8575701 Semiconductor device where logic region and DRAM are formed on same substrate Nov. 5, 2013
8570256 Device substrate, light emitting device and driving method of light emitting device Oct. 29, 2013
8569800 Field effect transistor Oct. 29, 2013
8546854 Semiconductor device and method for manufacturing the same Oct. 1, 2013
8541279 Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors Sep. 24, 2013
8536009 Differential threshold voltage adjustment in PMOS transistors by differential formation of a channel semiconductor material Sep. 17, 2013
8525273 Integrated circuit devices including device isolation structures and methods of fabricating the same Sep. 3, 2013
8513739 Metal-gate high-k reference structure Aug. 20, 2013
8507998 Semiconductor device Aug. 13, 2013
8502325 Metal high-K transistor having silicon sidewalls for reduced parasitic capacitance Aug. 6, 2013
8502323 Reliable normally-off III-nitride active device structures, and related methods and systems Aug. 6, 2013
8492228 Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers Jul. 23, 2013
8487349 Method and apparatus for improving sensitivity in vertical color CMOS image sensors Jul. 16, 2013
8486786 Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process Jul. 16, 2013
8487375 Semiconductor device and method of manufacturing semiconductor device Jul. 16, 2013
8482074 Semiconductor device manufacturing method and semiconductor device Jul. 9, 2013
8476716 Band edge engineered Vt offset device Jul. 2, 2013
8470677 Method of manufacturing semiconductor device Jun. 25, 2013
8455931 Package configurations for low EMI circuits Jun. 4, 2013
8441078 Semiconductor device including SiON gate dielectric with portions having different nitrogen concentrations May. 14, 2013
8426891 Semiconductor device and method of fabricating the same Apr. 23, 2013

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