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Class Information
Number: 257/391
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) > Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations)
Description: Subject matter wherein selected groups of complete IGFETs have different threshold voltages above which the IGFETs will operate (e.g., different IGFETs have different current carrying channel impurity dopant concentrations).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7605041 |
Semiconductor device and its manufacture method |
Oct. 20, 2009 |
| 7602029 |
Configuration and method of manufacturing the one-time programmable (OTP) memory cells |
Oct. 13, 2009 |
| 7592684 |
Semiconductor device and method for manufacturing the same |
Sep. 22, 2009 |
| 7569466 |
Dual metal gate self-aligned integration |
Aug. 4, 2009 |
| 7569899 |
Semiconductor integrated circuit |
Aug. 4, 2009 |
| 7554149 |
Flash memory devices comprising pillar patterns and methods of fabricating the same |
Jun. 30, 2009 |
| 7554163 |
Semiconductor device |
Jun. 30, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7511340 |
Semiconductor devices having gate structures and contact pads that are lower than the gate structures |
Mar. 31, 2009 |
| 7495294 |
Flash devices with shared word lines |
Feb. 24, 2009 |
| 7495295 |
Semiconductor device and method for fabricating the same |
Feb. 24, 2009 |
| 7482630 |
NAND memory arrays |
Jan. 27, 2009 |
| 7476933 |
Vertical gated access transistor |
Jan. 13, 2009 |
| 7476945 |
Memory having reduced memory cell size |
Jan. 13, 2009 |
| 7442998 |
Non-volatile memory device |
Oct. 28, 2008 |
| RE40532 |
Non-volatile memory cell and fabrication method |
Oct. 7, 2008 |
| 7408230 |
EEPROM device having first and second doped regions that increase an effective channel length |
Aug. 5, 2008 |
| 7408231 |
SRAM memory semiconductor integrated circuit device |
Aug. 5, 2008 |
| 7391063 |
Display device |
Jun. 24, 2008 |
| 7382029 |
Method and apparatus for improving integrated circuit device performance using hybrid crystal orientations |
Jun. 3, 2008 |
| 7375409 |
Semiconductor device including transistors having different drain breakdown voltages on a single substrate |
May. 20, 2008 |
| 7365389 |
Memory cell having enhanced high-K dielectric |
Apr. 29, 2008 |
| 7361932 |
Semiconductor device and method for fabricating the same |
Apr. 22, 2008 |
| 7355256 |
MOS Devices with different gate lengths and different gate polysilicon grain sizes |
Apr. 8, 2008 |
| 7339239 |
Vertical NROM NAND flash memory array |
Mar. 4, 2008 |
| 7339231 |
Semiconductor device and an integrated circuit card |
Mar. 4, 2008 |
| 7329929 |
SRAM cell and method of manufacturing the same |
Feb. 12, 2008 |
| 7323754 |
Semiconductor device and its manufacture method |
Jan. 29, 2008 |
| 7312503 |
Semiconductor memory device including MOS transistors each having a floating gate and a control gate |
Dec. 25, 2007 |
| 7307332 |
Semiconductor device and method for fabricating the same |
Dec. 11, 2007 |
| 7307296 |
Flash memory and fabrication method thereof |
Dec. 11, 2007 |
| 7301208 |
Semiconductor device and method for fabricating the same |
Nov. 27, 2007 |
| 7291880 |
Transistor assembly |
Nov. 6, 2007 |
| 7285816 |
Content addressable matrix memory cell |
Oct. 23, 2007 |
| 7279926 |
Headswitch and footswitch circuitry for power management |
Oct. 9, 2007 |
| 7274076 |
Threshold voltage adjustment for long channel transistors |
Sep. 25, 2007 |
| 7274046 |
Tri-gate low power device and method for manufacturing the same |
Sep. 25, 2007 |
| 7274075 |
Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrations |
Sep. 25, 2007 |
| 7268387 |
Semiconductor device and an electronic device |
Sep. 11, 2007 |
| 7227220 |
Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines |
Jun. 5, 2007 |
| 7217985 |
Semiconductor device including a transistor having low threshold voltage and high breakdown voltage |
May. 15, 2007 |
| 7183615 |
Nonvolatile semiconductor memory and manufacturing method for the same |
Feb. 27, 2007 |
| 7169671 |
Method of recording information in nonvolatile semiconductor memory |
Jan. 30, 2007 |
| 7166893 |
Semiconductor integrated circuit device |
Jan. 23, 2007 |
| 7161216 |
Depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor |
Jan. 9, 2007 |
| 7157751 |
Display device |
Jan. 2, 2007 |
| 7157776 |
Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device |
Jan. 2, 2007 |
| 7141862 |
Semiconductor device and method for manufacturing the same |
Nov. 28, 2006 |
| 7129531 |
Programmable resistance memory element with titanium rich adhesion layer |
Oct. 31, 2006 |
| 7122869 |
Nonvolatile semiconductor memory device in which selection transistors and memory transistors have different impurity concentration distributions |
Oct. 17, 2006 |
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