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Class Information
Number: 257/390
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom))
Description: Subject matter wherein the integrated circuit contains a two dimensional array of IGFETs, only some of which are completed devices, or the integrated circuit contains structure for a mask programmed read-only memory device.


Sub-classes under this class:

Class Number Class Name Patents
257/391 Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations) 346


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Patent Number Title Of Patent Date Issued
7005714 Nonvolatile semiconductor memory and manufacturing method for the same Feb. 28, 2006
7002842 Floating-body dynamic random access memory with purge line Feb. 21, 2006
6995436 Nonvolatile semiconductor memory device Feb. 7, 2006
6980456 Memory with low and fixed pre-charge loading Dec. 27, 2005
6975004 Semiconductor component with optimized current density Dec. 13, 2005
6969893 Semiconductor device and portable electronic apparatus Nov. 29, 2005
6967361 Sea-of-cells array of transistors Nov. 22, 2005
6967371 System with meshed power and signal buses on cell array Nov. 22, 2005
6967388 Semiconductor devices and methods for fabricating the same Nov. 22, 2005
6956254 Multilayered dual bit memory device with improved write/erase characteristics and method of manufacturing Oct. 18, 2005
6953973 Self-aligned trench isolation method and semiconductor device fabricated using the same Oct. 11, 2005
6953975 Semiconductor integrated circuit device Oct. 11, 2005
6953951 Semiconductor device, and manufacturing method thereof Oct. 11, 2005
6952038 3D polysilicon ROM and method of fabrication thereof Oct. 4, 2005
6949794 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures Sep. 27, 2005
6949423 MOSFET-fused nonvolatile read-only memory cell (MOFROM) Sep. 27, 2005
6943402 Nonvolatile semiconductor memory device including MOS transistors each having a floating gate and control gate Sep. 13, 2005
6943415 Architecture for mask programmable devices Sep. 13, 2005
6943394 Magnetic storage apparatus and manufacturing method thereof Sep. 13, 2005
6936912 Active matrix substrate with height control member Aug. 30, 2005
6933195 Method of fabricating a flash memory device Aug. 23, 2005
6927450 Non-volatile semiconductor storage device having a salicide structure Aug. 9, 2005
6921954 Asymmetric patterned magnetic memory Jul. 26, 2005
6919607 Structure of two-bit mask read-only memory device and fabricating method thereof Jul. 19, 2005
6917084 Interdigitated layout methodology for amplifier and H-bridge output stages Jul. 12, 2005
6916713 Code implantation process Jul. 12, 2005
6911704 Memory cell array with staggered local inter-connect structure Jun. 28, 2005
6909153 Semiconductor structure having buried track conductors, and method for generating an electrical contact with buried track conductors Jun. 21, 2005
6906361 Peripheral circuits of electrically programmable three-dimensional memory Jun. 14, 2005
6903401 Semiconductor devices with conductive lines that are laterally offset relative to corresponding contacts Jun. 7, 2005
6900124 Patterning for elliptical Vss contact on flash memory May. 31, 2005
6891262 Semiconductor device and method of producing the same May. 10, 2005
6888205 Metal oxide semiconductor field-effect transistor having a gate oxide layer with portions of different thicknesses and associated methods May. 3, 2005
6888202 Low-power high-performance storage circuitry May. 3, 2005
6885044 Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates Apr. 26, 2005
6885071 Semiconductor integrated circuit making use of standard cells Apr. 26, 2005
6879007 Low volt/high volt transistor Apr. 12, 2005
6876044 UV-programmable P-type mask ROM Apr. 5, 2005
6872990 Layout method of semiconductor device Mar. 29, 2005
6873055 Integrated circuit arrangement with field-shaping electrical conductor Mar. 29, 2005
6870233 Multi-bit ROM cell with bi-directional read and a method for making thereof Mar. 22, 2005
6867463 Silicon nitride read-only-memory Mar. 15, 2005
6864523 Self-aligned source pocket for flash memory cells Mar. 8, 2005
6864548 Semiconductor device with source line having reduced resistance and manufacturing method therefor Mar. 8, 2005
6861715 Electrically programmable three-dimensional memory Mar. 1, 2005
6861714 High-speed programmable read-only memory (PROM) devices Mar. 1, 2005
6853587 Vertical NROM having a storage density of 1 bit per 1F2 Feb. 8, 2005
6849526 Method of improving device resistance Feb. 1, 2005
6849905 Semiconductor device with localized charge storage dielectric and method of making same Feb. 1, 2005
6849906 Standard-cell type semiconductor integrated circuit device with a mixed arrangement of standard cells differing in height Feb. 1, 2005

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