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Class Information
Number: 257/390
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom))
Description: Subject matter wherein the integrated circuit contains a two dimensional array of IGFETs, only some of which are completed devices, or the integrated circuit contains structure for a mask programmed read-only memory device.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4326332 |
Method of making a high density V-MOS memory array |
Apr. 27, 1982 |
| 4319342 |
One device field effect transistor (FET) AC stable random access memory (RAM) array |
Mar. 9, 1982 |
| 4314360 |
Semiconductor memory device |
Feb. 2, 1982 |
| 4290184 |
Method of making post-metal programmable MOS read only memory |
Sep. 22, 1981 |
| 4282646 |
Method of making a transistor array |
Aug. 11, 1981 |
| 4282646 |
Method of making a transistor array |
Aug. 11, 1981 |
| 4281397 |
Virtual ground MOS EPROM or ROM matrix |
Jul. 28, 1981 |
| 4272830 |
ROM Storage location having more than two states |
Jun. 9, 1981 |
| 4263663 |
VMOS ROM Array |
Apr. 21, 1981 |
| 4258466 |
High density electrically programmable ROM |
Mar. 31, 1981 |
| 4240195 |
Dynamic random access memory |
Dec. 23, 1980 |
| 4240151 |
Semiconductor read only memory |
Dec. 16, 1980 |
| 4238839 |
Laser programmable read only memory |
Dec. 9, 1980 |
| 4230504 |
Method of making implant programmable N-channel ROM |
Oct. 28, 1980 |
| 4219836 |
Contact programmable double level polysilicon MOS read only memory |
Aug. 26, 1980 |
| 4212100 |
Stable N-channel MOS structure |
Jul. 15, 1980 |
| 4212026 |
Merged array PLA device, circuit, fabrication method and testing technique |
Jul. 8, 1980 |
| 4200474 |
Method of depositing titanium dioxide (rutile) as a gate dielectric for MIS device fabrication |
Apr. 29, 1980 |
| 4198693 |
VMOS Read only memory |
Apr. 15, 1980 |
| 4195354 |
Semiconductor matrix for integrated read-only storage |
Mar. 25, 1980 |
| 4180826 |
MOS double polysilicon read-only memory and cell |
Dec. 25, 1979 |
| 4176442 |
Method for producing a semiconductor fixed value ROM |
Dec. 4, 1979 |
| 4160987 |
Field effect transistors with polycrystalline silicon gate self-aligned to both conductive and non-conductive regions and fabrication of integrated circuits containing the transistors |
Jul. 10, 1979 |
| 4152627 |
Low power write-once, read-only memory array |
May. 1, 1979 |
| 4151021 |
Method of making a high density floating gate electrically programmable ROM |
Apr. 24, 1979 |
| 4151020 |
High density N-channel silicon gate read only memory |
Apr. 24, 1979 |
| 4146902 |
Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
Mar. 27, 1979 |
| 4144587 |
Counting level "1" bits to minimize ROM active elements |
Mar. 13, 1979 |
| 4139907 |
Integrated read only memory |
Feb. 13, 1979 |
| 4133611 |
Two-page interweaved random access memory configuration |
Jan. 9, 1979 |
| 4125878 |
Memory circuit |
Nov. 14, 1978 |
| 4118794 |
Memory array with larger memory capacitors at row ends |
Oct. 3, 1978 |
| 4112575 |
Fabrication methods for the high capacity ram cell |
Sep. 12, 1978 |
| 4096522 |
Monolithic semiconductor mask programmable ROM and a method for manufacturing the same |
Jun. 20, 1978 |
| 4048629 |
Low power MOS RAM address decode circuit |
Sep. 13, 1977 |
| 4045310 |
Starting product for the production of a read-only memory and a method of producing it and the read-only memory |
Aug. 30, 1977 |
| 4041474 |
Memory matrix controller |
Aug. 9, 1977 |
| 4037217 |
Read-only memory using complementary conductivity type insulated gate field effect transistors |
Jul. 19, 1977 |
| 4007452 |
Wafer scale integration system |
Feb. 8, 1977 |
| 4003034 |
Sense amplifier circuit for a random access memory |
Jan. 11, 1977 |
| 3985591 |
Method of manufacturing parallel gate matrix circuits |
Oct. 12, 1976 |
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