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Class Information
Number: 257/388
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With means to reduce parasitic capacitance > Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate) > Gate electrode consists of refractory or platinum group metal or silicide
Description: Subject matter wherein the gate electrode contains only refractory or platinum group metal (e.g., molybdenum, titanium or tungsten, or a silicide).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7459734 |
Method for manufacturing and structure for transistors with reduced gate to contact spacing |
Dec. 2, 2008 |
| 7439596 |
Transistors for semiconductor device and methods of fabricating the same |
Oct. 21, 2008 |
| 7432559 |
Silicide formation on SiGe |
Oct. 7, 2008 |
| 7432570 |
Semiconductor device and manufacturing method thereof |
Oct. 7, 2008 |
| 7429770 |
Semiconductor device and manufacturing method thereof |
Sep. 30, 2008 |
| 7419905 |
Gate electrodes and the formation thereof |
Sep. 2, 2008 |
| 7405450 |
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon |
Jul. 29, 2008 |
| 7402875 |
Lateral undercut of metal gate in SOI device |
Jul. 22, 2008 |
| 7391086 |
Conductive contacts and methods for fabricating conductive contacts for elctrochemical planarization of a work piece |
Jun. 24, 2008 |
| 7391089 |
Semiconductor device and method of manufacturing the same |
Jun. 24, 2008 |
| 7387956 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Jun. 17, 2008 |
| 7355255 |
Nickel silicide including indium and a method of manufacture therefor |
Apr. 8, 2008 |
| 7348629 |
Metal gated ultra short MOSFET devices |
Mar. 25, 2008 |
| 7321154 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Jan. 22, 2008 |
| 7314789 |
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
Jan. 1, 2008 |
| 7307871 |
SRAM cell design with high resistor CMOS gate structure for soft error rate improvement |
Dec. 11, 2007 |
| 7294878 |
Semiconductor memory device and method of manufacturing the same |
Nov. 13, 2007 |
| 7230304 |
Electric contacts and method of manufacturing thereof, and vacuum interrupter and vacuum circuit breaker using thereof |
Jun. 12, 2007 |
| 7230286 |
Vertical FET with nanowire channels and a silicided bottom contact |
Jun. 12, 2007 |
| 7208805 |
Structures comprising a layer free of nitrogen between silicon nitride and photoresist |
Apr. 24, 2007 |
| 7183596 |
Composite gate structure in an integrated circuit |
Feb. 27, 2007 |
| 7176537 |
High performance CMOS with metal-gate and Schottky source/drain |
Feb. 13, 2007 |
| 7173312 |
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
Feb. 6, 2007 |
| 7170139 |
Semiconductor constructions |
Jan. 30, 2007 |
| 7161211 |
Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition |
Jan. 9, 2007 |
| 7148548 |
Semiconductor device with a high-k gate dielectric and a metal gate electrode |
Dec. 12, 2006 |
| 7145207 |
Gate structure of semiconductor memory device |
Dec. 5, 2006 |
| 7122470 |
Semiconductor device with a CMOS transistor |
Oct. 17, 2006 |
| 7122472 |
Method for forming self-aligned dual fully silicided gates in CMOS devices |
Oct. 17, 2006 |
| 7098514 |
Highly integrated semiconductor device with silicide layer that secures contact margin and method of manufacturing the same |
Aug. 29, 2006 |
| 7098516 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Aug. 29, 2006 |
| 7078747 |
Semiconductor device having a HMP metal gate |
Jul. 18, 2006 |
| 7075158 |
Semiconductor device and method of manufacturing the same |
Jul. 11, 2006 |
| 7060575 |
Semiconductor device having transistor and method of manufacturing the same |
Jun. 13, 2006 |
| 7045422 |
Semiconductor gate structure and method for fabricating a semiconductor gate structure |
May. 16, 2006 |
| 7026689 |
Metal gate structure for MOS devices |
Apr. 11, 2006 |
| 7023059 |
Trenches to reduce lateral silicide growth in integrated circuit technology |
Apr. 4, 2006 |
| 6998686 |
Metal-gate electrode for CMOS transistor applications |
Feb. 14, 2006 |
| 6982467 |
Semiconductor device and method of manufacturing the same |
Jan. 3, 2006 |
| 6949806 |
Electrostatic discharge protection structure for deep sub-micron gate oxide |
Sep. 27, 2005 |
| 6946696 |
Self-aligned isolation double-gate FET |
Sep. 20, 2005 |
| 6936508 |
Metal gate MOS transistors and methods for making the same |
Aug. 30, 2005 |
| 6919606 |
Semiconductor device comprising an insulating mask formed on parts of a gate electrode and semiconductor layer crossing an active region |
Jul. 19, 2005 |
| 6903422 |
Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems |
Jun. 7, 2005 |
| 6900505 |
Method of forming refractory metal contact in an opening, and resulting structure |
May. 31, 2005 |
| 6897534 |
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same |
May. 24, 2005 |
| 6887774 |
Conductor layer nitridation |
May. 3, 2005 |
| 6885072 |
Nonvolatile memory with undercut trapping structure |
Apr. 26, 2005 |
| 6882017 |
Field effect transistors and integrated circuitry |
Apr. 19, 2005 |
| 6878579 |
Semiconductor device and method of manufacturing the same |
Apr. 12, 2005 |
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