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Class Information
Number: 257/388
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With means to reduce parasitic capacitance > Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate) > Gate electrode consists of refractory or platinum group metal or silicide
Description: Subject matter wherein the gate electrode contains only refractory or platinum group metal (e.g., molybdenum, titanium or tungsten, or a silicide).










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8710594 Integrated circuit devices having conductive structures with different cross sections Apr. 29, 2014
8659087 Electronic device with a gate electrode having at least two portions Feb. 25, 2014
8587062 Silicon on insulator (SOI) field effect transistors (FETs) with adjacent body contacts Nov. 19, 2013
8581350 Field effect transistor and semiconductor device, and method for manufacturing same Nov. 12, 2013
8569837 MOS devices having elevated source/drain regions Oct. 29, 2013
8482080 Engineered oxygen profile in metal gate electrode and nitrided high-K gate dielectrics structure for high performance PMOS devices Jul. 9, 2013
8432002 Method and structure for low resistive source and drain regions in a replacement metal gate process flow Apr. 30, 2013
8405132 Self-aligned selective metal contact to source/drain diffusion region Mar. 26, 2013
8378428 Metal gate structure of a semiconductor device Feb. 19, 2013
8324690 Semiconductor device with multi-functional dielectric layer Dec. 4, 2012
8298934 Structure and method of creating entirely self-aligned metallic contacts Oct. 30, 2012
8299542 MOSFET with multiple fully silicided gate and method for making the same Oct. 30, 2012
8283732 Semiconductor device Oct. 9, 2012
8278199 Method of manufacturing a semiconductor device Oct. 2, 2012
8264002 Field-effect transistor Sep. 11, 2012
8247878 Semiconductor device and method of manufacturing the same Aug. 21, 2012
8242567 Semiconductor device and manufacturing method thereof Aug. 14, 2012
8183644 Metal gate structure of a CMOS semiconductor device May. 22, 2012
8148786 Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate Apr. 3, 2012
8148248 Semiconductor device and manufacturing method thereof Apr. 3, 2012
8143676 Semiconductor device having a high-dielectric-constant gate insulating film Mar. 27, 2012
8089128 Transistor gate forming methods and integrated circuits Jan. 3, 2012
8053301 CMOS SiGe channel pFET and Si channel nFET devices with minimal STI recess Nov. 8, 2011
8039378 Method of manufacturing a semiconductor device Oct. 18, 2011
8030718 Local charge and work function engineering on MOSFET Oct. 4, 2011
8030717 Semiconductor device Oct. 4, 2011
8021971 Structure and method to form a thermally stable silicide in narrow dimension gate stacks Sep. 20, 2011
8022463 Semiconductor device and method of manufacturing the same Sep. 20, 2011
8013401 Selectively depositing aluminum in a replacement metal gate process Sep. 6, 2011
7998818 Method for making semiconductor element structure Aug. 16, 2011
7981785 Method for manufacturing semiconductor device and plasma oxidation method Jul. 19, 2011
7973367 Semiconductor device and manufacturing method thereof Jul. 5, 2011
7968950 Semiconductor device having improved gate electrode placement and decreased area design Jun. 28, 2011
7964923 Structure and method of creating entirely self-aligned metallic contacts Jun. 21, 2011
7944006 Metal gate electrode stabilization by alloying May. 17, 2011
7936016 Semiconductor device and manufacturing method thereof May. 3, 2011
7936025 Metalgate electrode for PMOS transistor May. 3, 2011
7923759 Metal gate semiconductor device and manufacturing method Apr. 12, 2011
7902599 Integrated circuit having long and short channel metal gate devices and method of manufacture Mar. 8, 2011
7898041 Block contact architectures for nanoscale channel transistors Mar. 1, 2011
7871915 Method for forming metal gates in a gate last process Jan. 18, 2011
7867899 Wordline resistance reduction method and structure in an integrated circuit memory device Jan. 11, 2011
7869262 Memory device with an asymmetric layout structure Jan. 11, 2011
7859078 Thin film transistor device and method of manufacturing the same Dec. 28, 2010
7838908 Semiconductor device having dual metal gates and method of manufacture Nov. 23, 2010
7816707 Field-effect transistor with nitride semiconductor and method for fabricating the same Oct. 19, 2010
7808019 Gate structure Oct. 5, 2010
7804141 Semiconductor element structure and method for making the same Sep. 28, 2010
7805274 Structure and methodology for characterizing device self-heating Sep. 28, 2010
7795124 Methods for contact resistance reduction of advanced CMOS devices Sep. 14, 2010

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