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Class Information
Number: 257/384
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) > Including silicide
Description: Subject matter wherein the contacts are made of a silicide.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615828 |
CMOS devices adapted to prevent latchup and methods of manufacturing the same |
Nov. 10, 2009 |
| 7615829 |
Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
Nov. 10, 2009 |
| 7608898 |
One transistor DRAM cell structure |
Oct. 27, 2009 |
| 7592669 |
Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channel |
Sep. 22, 2009 |
| 7560351 |
Integrated circuit arrangement with low-resistance contacts and method for production thereof |
Jul. 14, 2009 |
| 7560753 |
Field effect transistor with thin gate electrode and method of fabricating same |
Jul. 14, 2009 |
| 7550808 |
Fully siliciding regions to improve performance |
Jun. 23, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7528450 |
Semiconductor device having NMOSFET and PMOSFET and manufacturing method therefor |
May. 5, 2009 |
| 7514714 |
Thin film power MOS transistor, apparatus, and method |
Apr. 7, 2009 |
| 7511350 |
Nickel alloy silicide including indium and a method of manufacture therefor |
Mar. 31, 2009 |
| 7504698 |
Semiconductor device and manufacturing method thereof |
Mar. 17, 2009 |
| 7498640 |
Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby |
Mar. 3, 2009 |
| 7498641 |
Partial replacement silicide gate |
Mar. 3, 2009 |
| 7495293 |
Semiconductor device and method for manufacturing the same |
Feb. 24, 2009 |
| 7479682 |
Structure of a field effect transistor having metallic silicide and manufacturing method thereof |
Jan. 20, 2009 |
| 7476943 |
Semiconductor device having diffusion layers as bit lines and method for manufacturing the same |
Jan. 13, 2009 |
| 7476973 |
Method of manufacturing a semiconductor device having a silicidation blocking layer |
Jan. 13, 2009 |
| 7465996 |
Semiconductor device and method for fabricating the same |
Dec. 16, 2008 |
| 7459756 |
Method for forming a device having multiple silicide types |
Dec. 2, 2008 |
| 7453120 |
Semiconductor structure |
Nov. 18, 2008 |
| 7446379 |
Transistor with dopant-bearing metal in source and drain |
Nov. 4, 2008 |
| 7446381 |
Semiconductor memory device and method for fabricating the same |
Nov. 4, 2008 |
| 7439593 |
Semiconductor device having silicide formed with blocking insulation layer |
Oct. 21, 2008 |
| 7439596 |
Transistors for semiconductor device and methods of fabricating the same |
Oct. 21, 2008 |
| 7429770 |
Semiconductor device and manufacturing method thereof |
Sep. 30, 2008 |
| 7427796 |
Semiconductor device and method of manufacturing a semiconductor device |
Sep. 23, 2008 |
| 7411254 |
Semiconductor substrate |
Aug. 12, 2008 |
| 7411258 |
Cobalt disilicide structure |
Aug. 12, 2008 |
| 7405449 |
Semiconductor device and method of manufacturing the same |
Jul. 29, 2008 |
| 7405447 |
Silicon rich barrier layers for integrated circuit devices |
Jul. 29, 2008 |
| 7391089 |
Semiconductor device and method of manufacturing the same |
Jun. 24, 2008 |
| 7385260 |
Semiconductor device having silicide thin film and method of forming the same |
Jun. 10, 2008 |
| 7372108 |
Semiconductor device and manufacturing method thereof |
May. 13, 2008 |
| 7368775 |
Single transistor DRAM cell with reduced current leakage and method of manufacture |
May. 6, 2008 |
| 7365404 |
Semiconductor device having silicide reaction blocking region |
Apr. 29, 2008 |
| 7361959 |
CMOS circuits including a passive element having a low end resistance |
Apr. 22, 2008 |
| 7358552 |
Complementary metal-oxide-semiconductor image sensor and method for fabricating the same |
Apr. 15, 2008 |
| 7358574 |
Semiconductor device having silicide-blocking layer and fabrication method thereof |
Apr. 15, 2008 |
| 7348233 |
Methods for fabricating a CMOS device including silicide contacts |
Mar. 25, 2008 |
| 7326648 |
Semiconductor device and fabrication process of forming silicide layer on a polysilicon pattern by reducing thickness of metal layer before forming silicide layer on the polysilicon pattern |
Feb. 5, 2008 |
| 7317239 |
Method for manufacturing a resistor |
Jan. 8, 2008 |
| 7314789 |
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
Jan. 1, 2008 |
| 7307322 |
Ultra-uniform silicide system in integrated circuit technology |
Dec. 11, 2007 |
| 7298011 |
Semiconductor device with recessed L-shaped spacer and method of fabricating the same |
Nov. 20, 2007 |
| 7298012 |
Shallow junction semiconductor |
Nov. 20, 2007 |
| 7294890 |
Fully salicided (FUSA) MOSFET structure |
Nov. 13, 2007 |
| 7294935 |
Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide |
Nov. 13, 2007 |
| 7271455 |
Formation of fully silicided metal gate using dual self-aligned silicide process |
Sep. 18, 2007 |
| 7265400 |
Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same |
Sep. 4, 2007 |
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