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Class Information
Number: 257/384
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) > Including silicide
Description: Subject matter wherein the contacts are made of a silicide.










Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8710569 Semiconductor device and manufacturing method thereof Apr. 29, 2014
8691654 Semiconductor device having stressor film and method of manufacturing semiconductor device Apr. 8, 2014
8692330 Semiconductor device Apr. 8, 2014
8687668 Multi-wavelength semiconductor laser device Apr. 1, 2014
8679961 Method of manufacturing semiconductor device having pre-silicide nitrogen implant Mar. 25, 2014
8664721 FET with FUSI gate and reduced source/drain contact resistance Mar. 4, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8659032 FinFET and method of fabricating the same Feb. 25, 2014
8648425 Resistors formed based on metal-oxide-semiconductor structures Feb. 11, 2014
8643119 Substantially L-shaped silicide for contact Feb. 4, 2014
8642471 Semiconductor structure and method for manufacturing the same Feb. 4, 2014
8637941 Self-aligned contact employing a dielectric metal oxide spacer Jan. 28, 2014
8624329 Spacer-less low-K dielectric processes Jan. 7, 2014
8598643 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 3, 2013
8581350 Field effect transistor and semiconductor device, and method for manufacturing same Nov. 12, 2013
8581348 Semiconductor device with transistor local interconnects Nov. 12, 2013
8557693 Contact resistivity reduction in transistor devices by deep level impurity formation Oct. 15, 2013
8552511 Semiconductor device and manufacturing method thereof Oct. 8, 2013
8513742 Method for manufacturing contact and semiconductor device having said contact Aug. 20, 2013
8513122 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Aug. 20, 2013
8507996 Block contact plugs for MOS devices Aug. 13, 2013
8507378 Method and structure for self aligned contact for integrated circuits Aug. 13, 2013
8492854 Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same Jul. 23, 2013
8482076 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Jul. 9, 2013
8482084 SOI schottky source/drain device structure to control encroachment and delamination of silicide Jul. 9, 2013
8476680 Semiconductor device and method for manufacturing the same Jul. 2, 2013
8470656 Semiconductor device and method of manufacturing the same Jun. 25, 2013
8466509 Semiconductor device having a contact plug connecting to a silicide film formed on a diffusion region of a flash memory cell Jun. 18, 2013
8436425 SOI semiconductor device comprising substrate diodes having a topography tolerant contact structure May. 7, 2013
8421159 Raised source/drain field effect transistor Apr. 16, 2013
8415748 Use of epitaxial Ni silicide Apr. 9, 2013
8367533 Semiconductor devices including doped metal silicide patterns and related methods of forming such devices Feb. 5, 2013
8362568 Recessed contact for multi-gate FET optimizing series resistance Jan. 29, 2013
8362571 High compressive stress carbon liners for MOS devices Jan. 29, 2013
8358012 Metal semiconductor alloy structure for low contact resistance Jan. 22, 2013
8357581 Transistor performance improving method with metal gate Jan. 22, 2013
8344455 Semiconductor device and fabrication method for the same Jan. 1, 2013
8344465 Semiconductor device Jan. 1, 2013
8344452 Metal gate transistors with raised source and drain regions formed on heavily doped substrate Jan. 1, 2013
8338892 Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrode Dec. 25, 2012
8338261 Semiconductor device including field effect transistor and method of forming the same Dec. 25, 2012
8334574 Semiconductor contact structure and method of fabricating the same Dec. 18, 2012
8330227 Integrated semiconductor structure for SRAM and fabrication methods thereof Dec. 11, 2012
8324690 Semiconductor device with multi-functional dielectric layer Dec. 4, 2012
8304841 Metal gate transistor, integrated circuits, systems, and fabrication methods thereof Nov. 6, 2012
8299535 Delta monolayer dopants epitaxy for embedded source/drain silicide Oct. 30, 2012
8299541 Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor Oct. 30, 2012
8298934 Structure and method of creating entirely self-aligned metallic contacts Oct. 30, 2012
8299542 MOSFET with multiple fully silicided gate and method for making the same Oct. 30, 2012
8299504 Image sensing device and method of Oct. 30, 2012

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