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Class Information
Number: 257/383
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) > Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium)
Description: Subject matter wherein the contact to the source or drain region is made of a refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615828 |
CMOS devices adapted to prevent latchup and methods of manufacturing the same |
Nov. 10, 2009 |
| 7554162 |
Thin film transistor substrate with low reflectance upper electrode |
Jun. 30, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7538398 |
System and method for forming a semiconductor device source/drain contact |
May. 26, 2009 |
| 7514714 |
Thin film power MOS transistor, apparatus, and method |
Apr. 7, 2009 |
| 7498640 |
Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby |
Mar. 3, 2009 |
| 7485960 |
Semiconductor device and manufacturing method thereof |
Feb. 3, 2009 |
| 7446044 |
Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same |
Nov. 4, 2008 |
| 7432560 |
Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same |
Oct. 7, 2008 |
| 7411258 |
Cobalt disilicide structure |
Aug. 12, 2008 |
| 7405449 |
Semiconductor device and method of manufacturing the same |
Jul. 29, 2008 |
| 7391086 |
Conductive contacts and methods for fabricating conductive contacts for elctrochemical planarization of a work piece |
Jun. 24, 2008 |
| 7385260 |
Semiconductor device having silicide thin film and method of forming the same |
Jun. 10, 2008 |
| 7314789 |
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
Jan. 1, 2008 |
| 7307322 |
Ultra-uniform silicide system in integrated circuit technology |
Dec. 11, 2007 |
| 7294935 |
Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide |
Nov. 13, 2007 |
| 7276767 |
Thin film resistor device and a method of manufacture therefor |
Oct. 2, 2007 |
| 7271455 |
Formation of fully silicided metal gate using dual self-aligned silicide process |
Sep. 18, 2007 |
| 7259432 |
Semiconductor device for reducing parasitic capacitance produced in the vicinity of a transistor located within the semiconductor device |
Aug. 21, 2007 |
| 7250661 |
Semiconductor memory device with plural source/drain regions |
Jul. 31, 2007 |
| 7230304 |
Electric contacts and method of manufacturing thereof, and vacuum interrupter and vacuum circuit breaker using thereof |
Jun. 12, 2007 |
| 7230286 |
Vertical FET with nanowire channels and a silicided bottom contact |
Jun. 12, 2007 |
| 7190010 |
Semiconductor device |
Mar. 13, 2007 |
| 7176523 |
Power mosfet having conductor plug structured contacts |
Feb. 13, 2007 |
| 7173312 |
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
Feb. 6, 2007 |
| 7148535 |
Zero capacitance bondpad utilizing active negative capacitance |
Dec. 12, 2006 |
| 7138688 |
Doping method and semiconductor device fabricated using the method |
Nov. 21, 2006 |
| 7135744 |
Semiconductor device having self-aligned contact hole and method of fabricating the same |
Nov. 14, 2006 |
| 7126195 |
Method for forming a metallization layer |
Oct. 24, 2006 |
| 7125787 |
Method of manufacturing insulated gate semiconductor device |
Oct. 24, 2006 |
| 7102201 |
Strained semiconductor device structures |
Sep. 5, 2006 |
| 7098516 |
Refractory metal-based electrodes for work function setting in semiconductor devices |
Aug. 29, 2006 |
| 7061056 |
High f.sub.MAX deep submicron MOSFET |
Jun. 13, 2006 |
| 7049744 |
Organic electroluminescence panel having a substrate and a sealing panel sealed by adhering an inorganic film and the sealing panel using a sealing material |
May. 23, 2006 |
| 7026691 |
Minimizing transistor size in integrated circuits |
Apr. 11, 2006 |
| 7015552 |
Dual work function semiconductor structure with borderless contact and method of fabricating the same |
Mar. 21, 2006 |
| 7005713 |
Annular segmented MOSFET |
Feb. 28, 2006 |
| 6984864 |
Semiconductor device with MISFET having low leakage current |
Jan. 10, 2006 |
| 6969888 |
Planarized and silicided trench contact |
Nov. 29, 2005 |
| 6963114 |
SOI MOSFET with multi-sided source/drain silicide |
Nov. 8, 2005 |
| 6946709 |
Complementary transistors having different source and drain extension spacing controlled by different spacer sizes |
Sep. 20, 2005 |
| 6939812 |
Method of forming an etch stop layer in a semiconductor device |
Sep. 6, 2005 |
| 6940134 |
Semiconductor with contact contacting diffusion adjacent gate electrode |
Sep. 6, 2005 |
| 6933577 |
High performance FET with laterally thin extension |
Aug. 23, 2005 |
| 6927462 |
Method of forming a gate contact in a semiconductor device |
Aug. 9, 2005 |
| 6927457 |
Circuit structure for connecting bonding pad and ESD protection circuit |
Aug. 9, 2005 |
| 6927461 |
Semiconductor device having shared contact and fabrication method thereof |
Aug. 9, 2005 |
| 6891232 |
Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same |
May. 10, 2005 |
| 6873019 |
Semiconductor device including memory cells and manufacturing method thereof |
Mar. 29, 2005 |
| 6869854 |
Diffused extrinsic base and method for fabrication |
Mar. 22, 2005 |
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